Surface transfer doped diamond diodes with metal oxide passivation and field-plate

Surface transfer-doping, involving hydrogen terminated diamond surfaces, has been an effective method for producing diamond devices for some years but suffered from poor device longevity and reproducibility. The emergence of metal oxides as an encapsulant has begun to change this situation. Here, Hf...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2023-02, Vol.122 (9)
Hauptverfasser:	Watkins, Rebecca J., Henderson, Calum S., Pakpour-Tabrizi, Alexander C., Jackman, Richard B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bias Devices Diamonds Encapsulation Field strength Leakage current Metal oxides Production methods Schottky diodes Substrates
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!