Composition optimization of HfxZr1-xO2 thin films to achieve the morphotrophic phase boundary for high-k dielectrics

HfxZr1-xO2 thin films exhibit a high dielectric constant at the morphotropic phase boundary (MPB), which is beneficial for high-k dielectric applications. To minimize the equivalent oxide thickness, the effects of various HZO thicknesses and compositions on the MPB were investigated. In general, HZO...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 2023-04, Vol.133 (15)
Hauptverfasser:	Oh, Seungyeol, Jang, Hojung, Hwang, Hyunsang
Format:	Artikel
Sprache:	eng
Schlagworte:	Composition Optimization Orthorhombic phase Permittivity Phase boundaries Thickness Thin films Zirconium
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!