Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer
Owing to the COVID-19 outbreak, sterilization of deep-ultraviolet light-emitting diodes (DUV LEDs) has attracted increasing attention. Effectively improving the radiative recombination efficiency and mitigating the efficiency degradation, mainly caused by electron leakage and nonradiative recombinat...
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Veröffentlicht in: | AIP advances 2022-12, Vol.12 (12), p.125003-125003-7 |
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description | Owing to the COVID-19 outbreak, sterilization of deep-ultraviolet light-emitting diodes (DUV LEDs) has attracted increasing attention. Effectively improving the radiative recombination efficiency and mitigating the efficiency degradation, mainly caused by electron leakage and nonradiative recombination, have also emerged as two of the main issues to be addressed. In this study, a DUV LED epitaxial structure with a novel electron-blocking layer (EBL) is proposed. The DUV LED with a luminescence wavelength of ∼297 nm was formed by the stepwise variation of the Al component. Through the simulation and analysis of its performance parameters, we found that, compared to the conventional EBL structure, this new EBL structure not only reduces the electron leakage to the p-region effectively but also increases the hole injection into the active region, resulting in an increase in carrier concentration in the active region, a two-to-three-fold increase in the radiative recombination rate, and a 58% increase in the internal quantum efficiency, thus alleviating the efficiency droop and achieving a more efficient operation at high current densities. |
doi_str_mv | 10.1063/5.0127070 |
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Effectively improving the radiative recombination efficiency and mitigating the efficiency degradation, mainly caused by electron leakage and nonradiative recombination, have also emerged as two of the main issues to be addressed. In this study, a DUV LED epitaxial structure with a novel electron-blocking layer (EBL) is proposed. The DUV LED with a luminescence wavelength of ∼297 nm was formed by the stepwise variation of the Al component. Through the simulation and analysis of its performance parameters, we found that, compared to the conventional EBL structure, this new EBL structure not only reduces the electron leakage to the p-region effectively but also increases the hole injection into the active region, resulting in an increase in carrier concentration in the active region, a two-to-three-fold increase in the radiative recombination rate, and a 58% increase in the internal quantum efficiency, thus alleviating the efficiency droop and achieving a more efficient operation at high current densities.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/5.0127070</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Barrier layers ; Carrier density ; Efficiency ; Leakage ; Light emitting diodes ; Quantum efficiency ; Radiative recombination ; Sterilization ; Ultraviolet radiation</subject><ispartof>AIP advances, 2022-12, Vol.12 (12), p.125003-125003-7</ispartof><rights>Author(s)</rights><rights>2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-e34f4f7e4b83f96702b8adad7bbce542a155f35181371ae8dc4e380c3f8552b43</citedby><cites>FETCH-LOGICAL-c358t-e34f4f7e4b83f96702b8adad7bbce542a155f35181371ae8dc4e380c3f8552b43</cites><orcidid>0000-0003-1678-5845 ; 0000-0001-9160-1263 ; 0000-0002-7460-9797</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,864,2102,27924,27925</link.rule.ids></links><search><creatorcontrib>Zhao, Fengyi</creatorcontrib><creatorcontrib>Jia, Wei</creatorcontrib><creatorcontrib>Dong, Hailiang</creatorcontrib><creatorcontrib>Jia, Zhigang</creatorcontrib><creatorcontrib>Li, Tianbao</creatorcontrib><creatorcontrib>Yu, Chunyan</creatorcontrib><creatorcontrib>Zhang, Zhuxia</creatorcontrib><creatorcontrib>Xu, Bingshe</creatorcontrib><title>Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer</title><title>AIP advances</title><description>Owing to the COVID-19 outbreak, sterilization of deep-ultraviolet light-emitting diodes (DUV LEDs) has attracted increasing attention. Effectively improving the radiative recombination efficiency and mitigating the efficiency degradation, mainly caused by electron leakage and nonradiative recombination, have also emerged as two of the main issues to be addressed. In this study, a DUV LED epitaxial structure with a novel electron-blocking layer (EBL) is proposed. The DUV LED with a luminescence wavelength of ∼297 nm was formed by the stepwise variation of the Al component. Through the simulation and analysis of its performance parameters, we found that, compared to the conventional EBL structure, this new EBL structure not only reduces the electron leakage to the p-region effectively but also increases the hole injection into the active region, resulting in an increase in carrier concentration in the active region, a two-to-three-fold increase in the radiative recombination rate, and a 58% increase in the internal quantum efficiency, thus alleviating the efficiency droop and achieving a more efficient operation at high current densities.</description><subject>Barrier layers</subject><subject>Carrier density</subject><subject>Efficiency</subject><subject>Leakage</subject><subject>Light emitting diodes</subject><subject>Quantum efficiency</subject><subject>Radiative recombination</subject><subject>Sterilization</subject><subject>Ultraviolet radiation</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kU1r3DAQhk1poCHJof9A0FMLTvVpy8cQ2jQQ0kPSsxhbo10t2pUrySkL-fFVsyEtFKKLhHj0jGbepnnP6DmjnfiszinjPe3pm-aYM6VbwXn39p_zu-Ys5w2tSw6ManncPN757RKg-LgjsLOkrDEmLH6CQHJZ7J5ERy7CFdy2I2S0xCLO7RJKggcfAxYS_GpdWtz6UvxuRayPFjP55cuaQFXgPNdXGHAqqdYYISWPiQTYYzptjhyEjGfP-0nz4-uX-8tv7c33q-vLi5t2EkpXt5BOuh7lqIUbup7yUYMF24_jhEpyYEo5oZhmomeA2k4ShaaTcFopPkpx0lwfvDbCxszJbyHtTQRvni5iWhlIteeAxo0D56Ck4AOX2HVaycn2g7SdkFYpVV0fDq45xZ8L5mI2cUm7-n3De6mYqmPVlfp4oKYUc07oXqoyav5kZZR5zqqynw5snnx5SuIFfojpL2hm616D_zf_BraKonw</recordid><startdate>20221201</startdate><enddate>20221201</enddate><creator>Zhao, Fengyi</creator><creator>Jia, Wei</creator><creator>Dong, Hailiang</creator><creator>Jia, Zhigang</creator><creator>Li, Tianbao</creator><creator>Yu, Chunyan</creator><creator>Zhang, Zhuxia</creator><creator>Xu, Bingshe</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0003-1678-5845</orcidid><orcidid>https://orcid.org/0000-0001-9160-1263</orcidid><orcidid>https://orcid.org/0000-0002-7460-9797</orcidid></search><sort><creationdate>20221201</creationdate><title>Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer</title><author>Zhao, Fengyi ; Jia, Wei ; Dong, Hailiang ; Jia, Zhigang ; Li, Tianbao ; Yu, Chunyan ; Zhang, Zhuxia ; Xu, Bingshe</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-e34f4f7e4b83f96702b8adad7bbce542a155f35181371ae8dc4e380c3f8552b43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Barrier layers</topic><topic>Carrier density</topic><topic>Efficiency</topic><topic>Leakage</topic><topic>Light emitting diodes</topic><topic>Quantum efficiency</topic><topic>Radiative recombination</topic><topic>Sterilization</topic><topic>Ultraviolet radiation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhao, Fengyi</creatorcontrib><creatorcontrib>Jia, Wei</creatorcontrib><creatorcontrib>Dong, Hailiang</creatorcontrib><creatorcontrib>Jia, Zhigang</creatorcontrib><creatorcontrib>Li, Tianbao</creatorcontrib><creatorcontrib>Yu, Chunyan</creatorcontrib><creatorcontrib>Zhang, Zhuxia</creatorcontrib><creatorcontrib>Xu, Bingshe</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhao, Fengyi</au><au>Jia, Wei</au><au>Dong, Hailiang</au><au>Jia, Zhigang</au><au>Li, Tianbao</au><au>Yu, Chunyan</au><au>Zhang, Zhuxia</au><au>Xu, Bingshe</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer</atitle><jtitle>AIP advances</jtitle><date>2022-12-01</date><risdate>2022</risdate><volume>12</volume><issue>12</issue><spage>125003</spage><epage>125003-7</epage><pages>125003-125003-7</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>Owing to the COVID-19 outbreak, sterilization of deep-ultraviolet light-emitting diodes (DUV LEDs) has attracted increasing attention. Effectively improving the radiative recombination efficiency and mitigating the efficiency degradation, mainly caused by electron leakage and nonradiative recombination, have also emerged as two of the main issues to be addressed. In this study, a DUV LED epitaxial structure with a novel electron-blocking layer (EBL) is proposed. The DUV LED with a luminescence wavelength of ∼297 nm was formed by the stepwise variation of the Al component. Through the simulation and analysis of its performance parameters, we found that, compared to the conventional EBL structure, this new EBL structure not only reduces the electron leakage to the p-region effectively but also increases the hole injection into the active region, resulting in an increase in carrier concentration in the active region, a two-to-three-fold increase in the radiative recombination rate, and a 58% increase in the internal quantum efficiency, thus alleviating the efficiency droop and achieving a more efficient operation at high current densities.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0127070</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0003-1678-5845</orcidid><orcidid>https://orcid.org/0000-0001-9160-1263</orcidid><orcidid>https://orcid.org/0000-0002-7460-9797</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Barrier layers Carrier density Efficiency Leakage Light emitting diodes Quantum efficiency Radiative recombination Sterilization Ultraviolet radiation |
title | Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer |
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