Nonvolatile flash memory device with ferroelectric blocking layer via in situ ALD process

To improve performances of nonvolatile charge trap flash memory devices, we propose an in situ Hf0.5Zr0.5O2 (HZO)/HfO2/Al2O3 stacked structure, which is compatible for Si with the metal–oxide–semiconductor (MOS) process based on all atomic layer deposition. Since the appropriate bandgap difference b...

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Veröffentlicht in:	Applied physics letters 2023-07, Vol.123 (4)
Hauptverfasser:	Kim, Dongsu, Song, Chong-Myeong, Heo, Su Jin, Pyo, Goeun, Kim, Dongha, Lee, Ji Hwan, Park, Kyung-Ho, Lee, Shinbuhm, Kwon, Hyuk-Jun, Jang, Jae Eun
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Applied physics Artificial intelligence Atomic layer epitaxy Diffusion barriers Diffusion layers Ferroelectric materials Ferroelectricity Flash memory (computers) Hafnium oxide Memory devices Metal oxide semiconductors Multilayers Polarization characteristics Silicon
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