Structural and electronic properties of MoS2/WS2 heterostructure
Multilayer dichalcogenides of transition metals (TMD) as new two-dimensional semiconductor materials open up opportunities for theoretical and experimental research. Vertically stacked van der Waals heterostructures of transition metal dichalcogenides were recognized as the basis for the creation of...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 1 |
| container_start_page | |
| container_title | |
| container_volume | 2528 |
| creator | Sharin, Egor Muksunov, Nikita |
| description | Multilayer dichalcogenides of transition metals (TMD) as new two-dimensional semiconductor materials open up opportunities for theoretical and experimental research. Vertically stacked van der Waals heterostructures of transition metal dichalcogenides were recognized as the basis for the creation of new heterostructures. In this work, based on the density functional theory, we investigate the structural and electronic properties of the MoS2/WS2 heterostructure. The aim of this work is to control the band gap in heterostructures in order to find a way to develop high-quality single-layer and heterolayer electronic devices based on transition metal dichalcogenides with a long service life, such as optoelectronic devices and field devices. |
| doi_str_mv | 10.1063/5.0106186 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_5_0106186</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2710011662</sourcerecordid><originalsourceid>FETCH-LOGICAL-p1336-2f397728558d6c5544a29835c8a83dec8d798566427198ab7a09ecf143209d193</originalsourceid><addsrcrecordid>eNp9kMtKxDAYhYMoWEcXvkHAndCZ_EmTJjtlcFQYcVFFdyGmKXaoTU1Swbe3MgV3rs7mOxcOQudAlkAEW_ElmRSkOEAZcA55KUAcoowQVeS0YK_H6CTGHSFUlaXM0FWVwmjTGEyHTV9j1zmbgu9bi4fgBxdS6yL2DX7wFV29VBS_u-SCj7PNnaKjxnTRnc26QM-bm6f1Xb59vL1fX2_zARgTOW3YVEgl57IWlvOiMFRJxq00ktXOyrpUkgtR0BKUNG-lIcrZBgpGiapBsQW62OdOsz5HF5Pe-TH0U6WeLIQACEEn6nJPRdsmk1rf6yG0HyZ8ayD69yHN9fzQf_CXD3-gHuqG_QCODmTM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>2710011662</pqid></control><display><type>conference_proceeding</type><title>Structural and electronic properties of MoS2/WS2 heterostructure</title><source>AIP Journals Complete</source><creator>Sharin, Egor ; Muksunov, Nikita</creator><contributor>Sharin, Egor P. ; Grigor’ev, Yuri M.</contributor><creatorcontrib>Sharin, Egor ; Muksunov, Nikita ; Sharin, Egor P. ; Grigor’ev, Yuri M.</creatorcontrib><description>Multilayer dichalcogenides of transition metals (TMD) as new two-dimensional semiconductor materials open up opportunities for theoretical and experimental research. Vertically stacked van der Waals heterostructures of transition metal dichalcogenides were recognized as the basis for the creation of new heterostructures. In this work, based on the density functional theory, we investigate the structural and electronic properties of the MoS2/WS2 heterostructure. The aim of this work is to control the band gap in heterostructures in order to find a way to develop high-quality single-layer and heterolayer electronic devices based on transition metal dichalcogenides with a long service life, such as optoelectronic devices and field devices.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/5.0106186</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Chalcogenides ; Density functional theory ; Electronic devices ; Heterostructures ; Molybdenum disulfide ; Monolayers ; Multilayers ; Optoelectronic devices ; Semiconductor materials ; Service life ; Transition metal compounds ; Tungsten disulfide</subject><ispartof>AIP Conference Proceedings, 2022, Vol.2528 (1)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/acp/article-lookup/doi/10.1063/5.0106186$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>310,311,315,782,786,791,792,796,4514,23937,23938,25147,27931,27932,76392</link.rule.ids></links><search><contributor>Sharin, Egor P.</contributor><contributor>Grigor’ev, Yuri M.</contributor><creatorcontrib>Sharin, Egor</creatorcontrib><creatorcontrib>Muksunov, Nikita</creatorcontrib><title>Structural and electronic properties of MoS2/WS2 heterostructure</title><title>AIP Conference Proceedings</title><description>Multilayer dichalcogenides of transition metals (TMD) as new two-dimensional semiconductor materials open up opportunities for theoretical and experimental research. Vertically stacked van der Waals heterostructures of transition metal dichalcogenides were recognized as the basis for the creation of new heterostructures. In this work, based on the density functional theory, we investigate the structural and electronic properties of the MoS2/WS2 heterostructure. The aim of this work is to control the band gap in heterostructures in order to find a way to develop high-quality single-layer and heterolayer electronic devices based on transition metal dichalcogenides with a long service life, such as optoelectronic devices and field devices.</description><subject>Chalcogenides</subject><subject>Density functional theory</subject><subject>Electronic devices</subject><subject>Heterostructures</subject><subject>Molybdenum disulfide</subject><subject>Monolayers</subject><subject>Multilayers</subject><subject>Optoelectronic devices</subject><subject>Semiconductor materials</subject><subject>Service life</subject><subject>Transition metal compounds</subject><subject>Tungsten disulfide</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2022</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp9kMtKxDAYhYMoWEcXvkHAndCZ_EmTJjtlcFQYcVFFdyGmKXaoTU1Swbe3MgV3rs7mOxcOQudAlkAEW_ElmRSkOEAZcA55KUAcoowQVeS0YK_H6CTGHSFUlaXM0FWVwmjTGEyHTV9j1zmbgu9bi4fgBxdS6yL2DX7wFV29VBS_u-SCj7PNnaKjxnTRnc26QM-bm6f1Xb59vL1fX2_zARgTOW3YVEgl57IWlvOiMFRJxq00ktXOyrpUkgtR0BKUNG-lIcrZBgpGiapBsQW62OdOsz5HF5Pe-TH0U6WeLIQACEEn6nJPRdsmk1rf6yG0HyZ8ayD69yHN9fzQf_CXD3-gHuqG_QCODmTM</recordid><startdate>20220906</startdate><enddate>20220906</enddate><creator>Sharin, Egor</creator><creator>Muksunov, Nikita</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20220906</creationdate><title>Structural and electronic properties of MoS2/WS2 heterostructure</title><author>Sharin, Egor ; Muksunov, Nikita</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p1336-2f397728558d6c5544a29835c8a83dec8d798566427198ab7a09ecf143209d193</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Chalcogenides</topic><topic>Density functional theory</topic><topic>Electronic devices</topic><topic>Heterostructures</topic><topic>Molybdenum disulfide</topic><topic>Monolayers</topic><topic>Multilayers</topic><topic>Optoelectronic devices</topic><topic>Semiconductor materials</topic><topic>Service life</topic><topic>Transition metal compounds</topic><topic>Tungsten disulfide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sharin, Egor</creatorcontrib><creatorcontrib>Muksunov, Nikita</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sharin, Egor</au><au>Muksunov, Nikita</au><au>Sharin, Egor P.</au><au>Grigor’ev, Yuri M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Structural and electronic properties of MoS2/WS2 heterostructure</atitle><btitle>AIP Conference Proceedings</btitle><date>2022-09-06</date><risdate>2022</risdate><volume>2528</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>Multilayer dichalcogenides of transition metals (TMD) as new two-dimensional semiconductor materials open up opportunities for theoretical and experimental research. Vertically stacked van der Waals heterostructures of transition metal dichalcogenides were recognized as the basis for the creation of new heterostructures. In this work, based on the density functional theory, we investigate the structural and electronic properties of the MoS2/WS2 heterostructure. The aim of this work is to control the band gap in heterostructures in order to find a way to develop high-quality single-layer and heterolayer electronic devices based on transition metal dichalcogenides with a long service life, such as optoelectronic devices and field devices.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0106186</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP Conference Proceedings, 2022, Vol.2528 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_5_0106186 |
| source | AIP Journals Complete |
| subjects | Chalcogenides Density functional theory Electronic devices Heterostructures Molybdenum disulfide Monolayers Multilayers Optoelectronic devices Semiconductor materials Service life Transition metal compounds Tungsten disulfide |
| title | Structural and electronic properties of MoS2/WS2 heterostructure |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-05T02%3A29%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Structural%20and%20electronic%20properties%20of%20MoS2/WS2%20heterostructure&rft.btitle=AIP%20Conference%20Proceedings&rft.au=Sharin,%20Egor&rft.date=2022-09-06&rft.volume=2528&rft.issue=1&rft.issn=0094-243X&rft.eissn=1551-7616&rft.coden=APCPCS&rft_id=info:doi/10.1063/5.0106186&rft_dat=%3Cproquest_scita%3E2710011662%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2710011662&rft_id=info:pmid/&rfr_iscdi=true |