Compositional degradation of the electron blocking layers through solid-solution in GaN-based laser diodes

Electron leakage currents seriously hinder GaN-based blue laser diodes (LDs) from high wall-plug efficiencies. Inserting an ultra-thin AlGaN electron blocking layer (EBL) in the epitaxy structure is a major technique to suppress the leakage currents for which a high Al composition in the EBL is nece...

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Veröffentlicht in:	Journal of applied physics 2022-10, Vol.132 (14)
Hauptverfasser:	Li, Shukun, Lei, Menglai, Lang, Rui, Yu, Guo, Chen, Huanqing, Wen, Peijun, Akbar Khan, Muhammad Saddique, Meng, Linghai, Zong, Hua, Jiang, Shengxiang, Hu, Xiaodong
Format:	Artikel
Sprache:	eng
Schlagworte:	Adatoms Aluminum gallium nitrides Applied physics Composition effects Degradation Epitaxial growth Gallium nitrides Heterostructures Leakage current Optimization Random walk Semiconductor lasers Solid solutions Vapor phase epitaxy Vapor phases
Online-Zugang:	Volltext
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