Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2

Here, we report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. An InGaN single quantum well active layer provides the red spectral emission. The 621-nm-wavelength LEDs exhibited high-purity emission with a narrow full-width...

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Veröffentlicht in:	AIP advances 2022-06, Vol.12 (6), p.065125-065125-6
Hauptverfasser:	Iida, Daisuke, Kirilenko, Pavel, Velazquez-Rizo, Martin, Zhuang, Zhe, Najmi, Mohammed A., Ohkawa, Kazuhiro
Format:	Artikel
Sprache:	eng
Schlagworte:	Indium gallium nitrides Injection current Light emitting diodes Quantum efficiency Quantum wells Sapphire Spectral emission Substrates
Online-Zugang:	Volltext
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