M-center in low-energy electron irradiated 4H-SiC

M-center in low-energy electron irradiated 4H-SiC

We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced the following deep level defects: EH1 and EH3 previously assigned to carbon interstitial-related defects. We propose that...

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Veröffentlicht in:Applied physics letters 2022-06, Vol.120 (25)
Hauptverfasser: Knežević, T., Hadžipašić, A., Ohshima, T., Makino, T., Capan, I.
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Carbon
Deep level transient spectroscopy
Electron irradiation
Interstitial defects
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Zusammenfassung:We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced the following deep level defects: EH1 and EH3 previously assigned to carbon interstitial-related defects. We propose that EH1 and EH3 are identical to M1 and M3, also recently assigned to carbon interstitial defects, and assign them to C i = ( h ) and C i 0   ( h ), respectively.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0095827