The influence of surface electric fields on the chemical passivation of Si-SiO2 interfaces after firing

In this work it is demonstrated that the presence of surface electric fields during a post-deposition anneal can impact the chemical passivation of SiO2 + SiNx double layer stacks. Although the surface passivation generated in such dielectrics is well known, we demonstrate that an electric field pre...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Al-Dhahir, Isabel, McNab, Shona, Yu, Mingzhe, Shaw, Eleanor, Hamer, Phillip, Bonilla, Ruy S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Carrier density Charge density Dielectrics Electric fields Interfaces Interfacial properties Minority carriers Passivity Silicon dioxide
Online-Zugang:	Volltext
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