Geometrical magnetoresistance effect and mobility in graphene field-effect transistors

Further development of graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a specific device. Here, we demonstrate that the mobility in the GFETs can be directly characterized and studied using the geom...

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Veröffentlicht in:	Applied physics letters 2022-07, Vol.121 (1)
Hauptverfasser:	Harrysson Rodrigues, Isabel, Generalov, Andrey, Md Hoque, Anamul, Soikkeli, Miika, Murros, Anton, Arpiainen, Sanna, Vorobiev, Andrei
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Capacitance Carrier density Current carriers Field effect transistors Giant magnetoresistance Graphene Magnetoresistivity Scattering Semiconductor devices Transistors
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