Lightly strained germanium quantum wells with hole mobility exceeding one million

We demonstrate that a lightly strained germanium channel ( ε / / = − 0.41 %) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a two-dimensional (2D) hole gas with mobility in excess of 1 × 10 6 cm2/Vs and percolation density less than 5 × 10 10 cm−2. This low disorder 2D...

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Veröffentlicht in:	Applied physics letters 2022-03, Vol.120 (12)
Hauptverfasser:	Lodari, M., Kong, O., Rendell, M., Tosato, A., Sammak, A., Veldhorst, M., Hamilton, A. R., Scappucci, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Field effect transistors Germanium Heterostructures Hole mobility Percolation Quantum wells Semiconductor devices Spin-orbit interactions
Online-Zugang:	Volltext
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