Lightly strained germanium quantum wells with hole mobility exceeding one million
We demonstrate that a lightly strained germanium channel ( ε / / = − 0.41 %) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a two-dimensional (2D) hole gas with mobility in excess of 1 × 10 6 cm2/Vs and percolation density less than 5 × 10 10 cm−2. This low disorder 2D...
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| Veröffentlicht in: | Applied physics letters 2022-03, Vol.120 (12) |
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| container_title | Applied physics letters |
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| creator | Lodari, M. Kong, O. Rendell, M. Tosato, A. Sammak, A. Veldhorst, M. Hamilton, A. R. Scappucci, G. |
| description | We demonstrate that a lightly strained germanium channel (
ε
/
/
=
−
0.41
%) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a two-dimensional (2D) hole gas with mobility in excess of
1
×
10
6 cm2/Vs and percolation density less than
5
×
10
10 cm−2. This low disorder 2D hole system shows tunable fractional quantum Hall effects at low densities and low magnetic fields. The low-disorder and small effective mass (
0.068
m
e) defines lightly strained germanium as a basis to tune the strength of the spin–orbit coupling for fast and coherent quantum hardware. |
| doi_str_mv | 10.1063/5.0083161 |
| format | Article |
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ε
/
/
=
−
0.41
%) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a two-dimensional (2D) hole gas with mobility in excess of
1
×
10
6 cm2/Vs and percolation density less than
5
×
10
10 cm−2. This low disorder 2D hole system shows tunable fractional quantum Hall effects at low densities and low magnetic fields. The low-disorder and small effective mass (
0.068
m
e) defines lightly strained germanium as a basis to tune the strength of the spin–orbit coupling for fast and coherent quantum hardware.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0083161</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Field effect transistors ; Germanium ; Heterostructures ; Hole mobility ; Percolation ; Quantum wells ; Semiconductor devices ; Spin-orbit interactions</subject><ispartof>Applied physics letters, 2022-03, Vol.120 (12)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c362t-6108c1f617c9b0dcfded698dab2f301663acb34c644dd3de7a472fb4283fa8643</citedby><cites>FETCH-LOGICAL-c362t-6108c1f617c9b0dcfded698dab2f301663acb34c644dd3de7a472fb4283fa8643</cites><orcidid>0000-0003-0493-4129 ; 0000-0001-9730-3523 ; 0000-0001-5980-3199 ; 0000-0001-7484-3738 ; 0000-0003-2512-0079</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0083161$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76127</link.rule.ids></links><search><creatorcontrib>Lodari, M.</creatorcontrib><creatorcontrib>Kong, O.</creatorcontrib><creatorcontrib>Rendell, M.</creatorcontrib><creatorcontrib>Tosato, A.</creatorcontrib><creatorcontrib>Sammak, A.</creatorcontrib><creatorcontrib>Veldhorst, M.</creatorcontrib><creatorcontrib>Hamilton, A. R.</creatorcontrib><creatorcontrib>Scappucci, G.</creatorcontrib><title>Lightly strained germanium quantum wells with hole mobility exceeding one million</title><title>Applied physics letters</title><description>We demonstrate that a lightly strained germanium channel (
ε
/
/
=
−
0.41
%) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a two-dimensional (2D) hole gas with mobility in excess of
1
×
10
6 cm2/Vs and percolation density less than
5
×
10
10 cm−2. This low disorder 2D hole system shows tunable fractional quantum Hall effects at low densities and low magnetic fields. The low-disorder and small effective mass (
0.068
m
e) defines lightly strained germanium as a basis to tune the strength of the spin–orbit coupling for fast and coherent quantum hardware.</description><subject>Applied physics</subject><subject>Field effect transistors</subject><subject>Germanium</subject><subject>Heterostructures</subject><subject>Hole mobility</subject><subject>Percolation</subject><subject>Quantum wells</subject><subject>Semiconductor devices</subject><subject>Spin-orbit interactions</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNqd0E1LAzEQBuAgCtbqwX8Q8KSwNbPZze4epfgFBRH0HLL5aFOymzbJWvvvXWnBu6dhhocZ5kXoGsgMCKP35YyQmgKDEzQBUlUZBahP0YQQQjPWlHCOLmJcj22ZUzpB7wu7XCW3xzEFYXut8FKHTvR26PB2EH0a6047F_HOphVeeadx51vrbNpj_S21VrZfYt-PY-uc9f0lOjPCRX11rFP0-fT4MX_JFm_Pr_OHRSYpy1PGgNQSDINKNi1R0iitWFMr0eaGEmCMCtnSQrKiUIoqXYmiyk1b5DU1omYFnaKbw95N8NtBx8TXfgj9eJLnrACoSAPNqG4PSgYfY9CGb4LtRNhzIPw3MV7yY2KjvTvYKG0Safzlf_jLhz_IN8rQHyROenE</recordid><startdate>20220321</startdate><enddate>20220321</enddate><creator>Lodari, M.</creator><creator>Kong, O.</creator><creator>Rendell, M.</creator><creator>Tosato, A.</creator><creator>Sammak, A.</creator><creator>Veldhorst, M.</creator><creator>Hamilton, A. R.</creator><creator>Scappucci, G.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-0493-4129</orcidid><orcidid>https://orcid.org/0000-0001-9730-3523</orcidid><orcidid>https://orcid.org/0000-0001-5980-3199</orcidid><orcidid>https://orcid.org/0000-0001-7484-3738</orcidid><orcidid>https://orcid.org/0000-0003-2512-0079</orcidid></search><sort><creationdate>20220321</creationdate><title>Lightly strained germanium quantum wells with hole mobility exceeding one million</title><author>Lodari, M. ; Kong, O. ; Rendell, M. ; Tosato, A. ; Sammak, A. ; Veldhorst, M. ; Hamilton, A. R. ; Scappucci, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c362t-6108c1f617c9b0dcfded698dab2f301663acb34c644dd3de7a472fb4283fa8643</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>Field effect transistors</topic><topic>Germanium</topic><topic>Heterostructures</topic><topic>Hole mobility</topic><topic>Percolation</topic><topic>Quantum wells</topic><topic>Semiconductor devices</topic><topic>Spin-orbit interactions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lodari, M.</creatorcontrib><creatorcontrib>Kong, O.</creatorcontrib><creatorcontrib>Rendell, M.</creatorcontrib><creatorcontrib>Tosato, A.</creatorcontrib><creatorcontrib>Sammak, A.</creatorcontrib><creatorcontrib>Veldhorst, M.</creatorcontrib><creatorcontrib>Hamilton, A. R.</creatorcontrib><creatorcontrib>Scappucci, G.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lodari, M.</au><au>Kong, O.</au><au>Rendell, M.</au><au>Tosato, A.</au><au>Sammak, A.</au><au>Veldhorst, M.</au><au>Hamilton, A. R.</au><au>Scappucci, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lightly strained germanium quantum wells with hole mobility exceeding one million</atitle><jtitle>Applied physics letters</jtitle><date>2022-03-21</date><risdate>2022</risdate><volume>120</volume><issue>12</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We demonstrate that a lightly strained germanium channel (
ε
/
/
=
−
0.41
%) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a two-dimensional (2D) hole gas with mobility in excess of
1
×
10
6 cm2/Vs and percolation density less than
5
×
10
10 cm−2. This low disorder 2D hole system shows tunable fractional quantum Hall effects at low densities and low magnetic fields. The low-disorder and small effective mass (
0.068
m
e) defines lightly strained germanium as a basis to tune the strength of the spin–orbit coupling for fast and coherent quantum hardware.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0083161</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-0493-4129</orcidid><orcidid>https://orcid.org/0000-0001-9730-3523</orcidid><orcidid>https://orcid.org/0000-0001-5980-3199</orcidid><orcidid>https://orcid.org/0000-0001-7484-3738</orcidid><orcidid>https://orcid.org/0000-0003-2512-0079</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2022-03, Vol.120 (12) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_5_0083161 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Field effect transistors Germanium Heterostructures Hole mobility Percolation Quantum wells Semiconductor devices Spin-orbit interactions |
| title | Lightly strained germanium quantum wells with hole mobility exceeding one million |
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