Properties of topological crystalline insulator Pb0.5Sn0.5Te epitaxial films doped with bismuth

We report here on the properties of topological crystalline insulator Pb0.5Sn0.5Te epitaxial films doped with bismuth at levels from 0% (undoped) to 0.15%. The undoped film exhibits a p-type character due to metal vacancies. As the doping level rises, the hole concentration reduces. At a level of 0....

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Veröffentlicht in:	Journal of applied physics 2022-02, Vol.131 (8)
Hauptverfasser:	Kawata, B. A., Fornari, C. I., Kagerer, P., Heßdörfer, J., Bentmann, H., Reinert, F., Okazaki, A. K., Rappl, P. H. O., Abramof, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bismuth Chemical potential Conduction bands Crystal structure Crystallinity Data acquisition Diffusion Doping Electron density Photoelectric emission Topology Valence band
Online-Zugang:	Volltext
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