Si surface orientation dependence of SiC-dot formation in bulk-Si using hot-C+-ion implantation technique

We experimentally investigated the Si surface orientation dependence of SiC-dot formation and photoluminescence (PL) properties in three (100)-, (110)-, and (111)-bulk-Si substrates (C+–Si) with different surface densities of Si atoms (NS), where SiC-dots were fabricated by a hot-C+ ion implantation...

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Veröffentlicht in:	Journal of applied physics 2022-02, Vol.131 (7)
Hauptverfasser:	Mizuno, Tomohisa, Aoki, Takashi, Sameshima, Toshiyuki
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bulk density Ion implantation Orientation Photoelectrons Photoluminescence Quantum dots Silicon dioxide Silicon substrates
Online-Zugang:	Volltext
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