Diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectric

A hydrogen terminated diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectrics was fabricated on a single crystalline diamond sample. Compared to a device with single MoO3 layer gate dielectrics, the device performance was improved due to the improvement in the gate voltage, which benefited fr...

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Veröffentlicht in:	Applied physics letters 2022-01, Vol.120 (4)
Hauptverfasser:	Ren, Zeyang, Ding, Senchuan, Liang, Zhenfang, He, Qi, Su, Kai, Zhang, Jinfeng, Zhang, Jincheng, Zhang, Chunfu, Hao, Yue
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Diamonds Dielectrics Electric potential Low resistance Molybdenum trioxide MOSFETs Silicon nitride Transconductance Voltage Work functions
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container_title	Applied physics letters
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creator	Ren, Zeyang Ding, Senchuan Liang, Zhenfang He, Qi Su, Kai Zhang, Jinfeng Zhang, Jincheng Zhang, Chunfu Hao, Yue
description	A hydrogen terminated diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectrics was fabricated on a single crystalline diamond sample. Compared to a device with single MoO3 layer gate dielectrics, the device performance was improved due to the improvement in the gate voltage, which benefited from the doubly stacked gate dielectric. The device with 4 μm gate length shows a maximum output current of 118.67 mA/mm and an ultra-low resistance of 36.15 Ω mm at the gate voltage of −5 V. In addition, the device shows a maximum transconductance of 35 mS/mm. These results indicate that the dielectric with high work function has high potential to achieve a high-performance diamond MOSFET.
doi_str_mv	10.1063/5.0077530
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Compared to a device with single MoO3 layer gate dielectrics, the device performance was improved due to the improvement in the gate voltage, which benefited from the doubly stacked gate dielectric. The device with 4 μm gate length shows a maximum output current of 118.67 mA/mm and an ultra-low resistance of 36.15 Ω mm at the gate voltage of −5 V. In addition, the device shows a maximum transconductance of 35 mS/mm. 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Compared to a device with single MoO3 layer gate dielectrics, the device performance was improved due to the improvement in the gate voltage, which benefited from the doubly stacked gate dielectric. The device with 4 μm gate length shows a maximum output current of 118.67 mA/mm and an ultra-low resistance of 36.15 Ω mm at the gate voltage of −5 V. In addition, the device shows a maximum transconductance of 35 mS/mm. These results indicate that the dielectric with high work function has high potential to achieve a high-performance diamond MOSFET.</description><subject>Applied physics</subject><subject>Diamonds</subject><subject>Dielectrics</subject><subject>Electric potential</subject><subject>Low resistance</subject><subject>Molybdenum trioxide</subject><subject>MOSFETs</subject><subject>Silicon nitride</subject><subject>Transconductance</subject><subject>Voltage</subject><subject>Work functions</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNqdkMtKQzEURYMoWKsD_yDgSOG2ed7HwIHUJ7R2UB2HPDW1bWqSKv17Iy04d3TOYS_WgQ3AOUYDjGo65AOEmoZTdAB6uGwVxbg9BD2EEK3qjuNjcJLSvJycUNoD17deLsPKwMl0dn_3Ar99foeTMKXDmafPDJqwUYstTFnqD2vgm8wWGm8XVufo9Sk4cnKR7Nl-9sFrkYweq_H04Wl0M6404U2uDFLUdZwora0jUiLM2pqyVjdKGUNUQ2UJuZNMNx2xtSIKd7i1ru4YQ1rSPrjYedcxfG5symIeNnFVXgpSk2IiiLNCXe4oHUNK0Tqxjn4p41ZgJH7bEVzs2yns1Y5N2meZfVj9D_4K8Q8Ua-PoDyiocJo</recordid><startdate>20220124</startdate><enddate>20220124</enddate><creator>Ren, Zeyang</creator><creator>Ding, Senchuan</creator><creator>Liang, Zhenfang</creator><creator>He, Qi</creator><creator>Su, Kai</creator><creator>Zhang, Jinfeng</creator><creator>Zhang, Jincheng</creator><creator>Zhang, Chunfu</creator><creator>Hao, Yue</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-1771-5187</orcidid><orcidid>https://orcid.org/0000-0001-9555-3377</orcidid><orcidid>https://orcid.org/0000-0001-5437-3169</orcidid><orcidid>https://orcid.org/0000-0002-5503-7228</orcidid></search><sort><creationdate>20220124</creationdate><title>Diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectric</title><author>Ren, Zeyang ; Ding, Senchuan ; Liang, Zhenfang ; He, Qi ; Su, Kai ; Zhang, Jinfeng ; Zhang, Jincheng ; Zhang, Chunfu ; Hao, Yue</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-d0b3f952bccef2aa01486348c7bbdd2b73a52b5fa4c792e6b2b1918ef69440ca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>Diamonds</topic><topic>Dielectrics</topic><topic>Electric potential</topic><topic>Low resistance</topic><topic>Molybdenum trioxide</topic><topic>MOSFETs</topic><topic>Silicon nitride</topic><topic>Transconductance</topic><topic>Voltage</topic><topic>Work functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ren, Zeyang</creatorcontrib><creatorcontrib>Ding, Senchuan</creatorcontrib><creatorcontrib>Liang, Zhenfang</creatorcontrib><creatorcontrib>He, Qi</creatorcontrib><creatorcontrib>Su, Kai</creatorcontrib><creatorcontrib>Zhang, Jinfeng</creatorcontrib><creatorcontrib>Zhang, Jincheng</creatorcontrib><creatorcontrib>Zhang, Chunfu</creatorcontrib><creatorcontrib>Hao, Yue</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ren, Zeyang</au><au>Ding, Senchuan</au><au>Liang, Zhenfang</au><au>He, Qi</au><au>Su, Kai</au><au>Zhang, Jinfeng</au><au>Zhang, Jincheng</au><au>Zhang, Chunfu</au><au>Hao, Yue</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectric</atitle><jtitle>Applied physics letters</jtitle><date>2022-01-24</date><risdate>2022</risdate><volume>120</volume><issue>4</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A hydrogen terminated diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectrics was fabricated on a single crystalline diamond sample. Compared to a device with single MoO3 layer gate dielectrics, the device performance was improved due to the improvement in the gate voltage, which benefited from the doubly stacked gate dielectric. The device with 4 μm gate length shows a maximum output current of 118.67 mA/mm and an ultra-low resistance of 36.15 Ω mm at the gate voltage of −5 V. In addition, the device shows a maximum transconductance of 35 mS/mm. These results indicate that the dielectric with high work function has high potential to achieve a high-performance diamond MOSFET.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0077530</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-1771-5187</orcidid><orcidid>https://orcid.org/0000-0001-9555-3377</orcidid><orcidid>https://orcid.org/0000-0001-5437-3169</orcidid><orcidid>https://orcid.org/0000-0002-5503-7228</orcidid></addata></record>
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source	AIP Journals Complete; Alma/SFX Local Collection
subjects	Applied physics Diamonds Dielectrics Electric potential Low resistance Molybdenum trioxide MOSFETs Silicon nitride Transconductance Voltage Work functions
title	Diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectric
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