Scattering mechanism of hole carriers in organic molecular semiconductors deduced from analyses of terahertz absorption spectra using Drude–Anderson model

To clarify the limiting factor of carrier transport in organic molecular semiconductors, we performed charge modulation spectroscopy of a field-effect transistor with a 3,11-didecyldinaphtho[2,3-d:2′,3′-d′]benzo[1,2-b:4,5-b′]dithiophene (C10-DNBDT-NW) single crystal, which showed a hole-carrier mobi...

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Veröffentlicht in:Applied physics letters 2022-01, Vol.120 (5)
Hauptverfasser: Han, Y., Miyamoto, T., Otaki, T., Takamura, N., Kida, N., Osakabe, N., Tsurumi, J., Watanabe, S., Okamoto, T., Takeya, J., Okamoto, H.
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container_issue 5
container_start_page
container_title Applied physics letters
container_volume 120
creator Han, Y.
Miyamoto, T.
Otaki, T.
Takamura, N.
Kida, N.
Osakabe, N.
Tsurumi, J.
Watanabe, S.
Okamoto, T.
Takeya, J.
Okamoto, H.
description To clarify the limiting factor of carrier transport in organic molecular semiconductors, we performed charge modulation spectroscopy of a field-effect transistor with a 3,11-didecyldinaphtho[2,3-d:2′,3′-d′]benzo[1,2-b:4,5-b′]dithiophene (C10-DNBDT-NW) single crystal, which showed a hole-carrier mobility of 8.4 cm2 V−1 s−1 at 295 K. The terahertz absorption of electric-field-induced hole carriers increases with decreasing frequency down to 150 cm−1 (4.5 THz). However, it is not reproduced by the simple Drude model but tends to be suppressed with decreasing frequency. The spectral shape of the absorption and the mobility value were simultaneously reproduced by the Drude–Anderson model, which incorporates carrier scattering due to thermal molecular fluctuations. The frequency of the intermolecular vibration that dominates carrier scattering is estimated to be approximately 8 cm−1, which is in good agreement with the theoretically predicted value. Moreover, analyses of the absorption spectra at low temperatures reveal that the mobility increases to 14 cm2 V−1 s−1 at 240 K. These results demonstrate that thermal molecular fluctuations limit the mobility.
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The terahertz absorption of electric-field-induced hole carriers increases with decreasing frequency down to 150 cm−1 (4.5 THz). However, it is not reproduced by the simple Drude model but tends to be suppressed with decreasing frequency. The spectral shape of the absorption and the mobility value were simultaneously reproduced by the Drude–Anderson model, which incorporates carrier scattering due to thermal molecular fluctuations. The frequency of the intermolecular vibration that dominates carrier scattering is estimated to be approximately 8 cm−1, which is in good agreement with the theoretically predicted value. Moreover, analyses of the absorption spectra at low temperatures reveal that the mobility increases to 14 cm2 V−1 s−1 at 240 K. 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source American Institute of Physics (AIP) Journals; Alma/SFX Local Collection
subjects Absorption spectra
Applied physics
Carrier mobility
Carrier transport
Electric fields
Field effect transistors
Low temperature
Organic chemistry
Organic semiconductors
Scattering
Semiconductor devices
Semiconductors
Single crystals
Spectrum analysis
Terahertz frequencies
title Scattering mechanism of hole carriers in organic molecular semiconductors deduced from analyses of terahertz absorption spectra using Drude–Anderson model
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