Temperature characteristic of carrier scattering and dark resistivity of semi-insulating GaAs

The electron mobility and the dark resistivity of undoped semi-insulating GaAs have been calculated theoretically over the temperature range from 5 to 500 K by taking into consideration all indispensable scattering processes, screening effects, and impurities compensation action. The two temperature...

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Veröffentlicht in:	Journal of applied physics 2021-11, Vol.130 (19)
Hauptverfasser:	Tian, Liqiang, Sun, Guangcheng, Jing, Dong, Pan, Cong, Ran, Zeen, Shi, Wei, Zhang, Chao
Format:	Artikel
Sprache:	eng
Schlagworte:	Acoustic insulation Applied physics Electrical resistivity Electron mobility Gallium arsenide Impurities Phonons Piezoelectricity Scattering Thermodynamic properties
Online-Zugang:	Volltext
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