Study of the iron distribution profile and the influence of annealing on the structure implanted in silicon

Study of the iron distribution profile and the influence of annealing on the structure implanted in silicon

This article presents the results of studies of the distribution profiles of implanted iron atoms into silicon, depending on the irradiation dose and annealing temperature by the RBS method. The results obtained confirm similar data obtained by SIMS. The effect of thermal annealing on the distributi...

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Hauptverfasser: Egamberdiev, B. E., Mallayev, A. S., Sayfulloev, Sh. A., Rahmatov, M. I.
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Sprache:eng
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Annealing
Impurities
Iron
Radiation dosage
Silicon
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creator Egamberdiev, B. E.
Mallayev, A. S.
Sayfulloev, Sh. A.
Rahmatov, M. I.
description This article presents the results of studies of the distribution profiles of implanted iron atoms into silicon, depending on the irradiation dose and annealing temperature by the RBS method. The results obtained confirm similar data obtained by SIMS. The effect of thermal annealing on the distribution of iron and other impurities, in particular, oxygen, has been studied. The possibility of using the RBS method for analyzing the concentration distribution of doped impurities and the interaction of impurities with each other is presented.
doi_str_mv 10.1063/5.0071382
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subjects Annealing
Impurities
Iron
Radiation dosage
Silicon
title Study of the iron distribution profile and the influence of annealing on the structure implanted in silicon
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