First-principles study of two-dimensional gallium-nitrides on van der Waals epitaxial substrate
The structural and electronic properties of two-dimensional gallium nitrides (2D GaNs) on a van der Waals (vdW) epitaxial substrate are investigated using first-principles calculations. We show that the structures and electronic properties of mono- and bilayer GaN are hardly affected when deposited...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2021-11, Vol.119 (20) |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 20 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 119 |
| creator | Yayama, Tomoe Lu, Anh Khoa Augustin Morishita, Tetsuya Nakanishi, Takeshi |
| description | The structural and electronic properties of two-dimensional gallium nitrides (2D GaNs) on a van der Waals (vdW) epitaxial substrate are investigated using first-principles calculations. We show that the structures and electronic properties of mono- and bilayer GaN are hardly affected when deposited on the vdW substrate comprising a graphene sheet placed on the GaN(0001) bulk surface. A weak attractive interaction is found to work between the 2D GaNs and vdW substrate, which is still sufficient to maintain the 2D GaNs on the substrate and could also be exploited to control their stability. The present findings demonstrate that the vdW substrate is propitious to grow and hold the 2D GaNs without altering their intrinsic properties, in contrast to previously examined metal substrates. |
| doi_str_mv | 10.1063/5.0068939 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_5_0068939</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2597907422</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-fc070c11917b0e0020841e99bf610971f0c505c639fa7eb0281ca466c32088263</originalsourceid><addsrcrecordid>eNp90MFKAzEQBuAgCtbqwTcIeFJInWy6yeYoxaogeFE8hmw2KynbzZpkq317Iy16EDyFId8MMz9C5xRmFDi7LmcAvJJMHqAJBSEIo7Q6RBMAYITLkh6jkxhXuSwLxiZILV2IiQzB9cYNnY04prHZYt_i9OFJ49a2j873usNvuuvcuCa9S8E1Wfoeb3SPGxvwq9ZdxHZwSX-6bONYxxR0sqfoqM1f9mz_TtHL8vZ5cU8en-4eFjePxLBCJNIaEGAolVTUYAEKqObUSlm3nIIUtAVTQmk4k60WtoaiokbPOc_dUFUFZ1N0sZs7BP8-2pjUyo8hrx1VUUohQcyLIqvLnTLBxxhsq_Lhax22ioL6zk-Vap9ftlc7G02-KuUMfvDGh1-ohqb9D_-d_AUgbn4r</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2597907422</pqid></control><display><type>article</type><title>First-principles study of two-dimensional gallium-nitrides on van der Waals epitaxial substrate</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Yayama, Tomoe ; Lu, Anh Khoa Augustin ; Morishita, Tetsuya ; Nakanishi, Takeshi</creator><creatorcontrib>Yayama, Tomoe ; Lu, Anh Khoa Augustin ; Morishita, Tetsuya ; Nakanishi, Takeshi</creatorcontrib><description>The structural and electronic properties of two-dimensional gallium nitrides (2D GaNs) on a van der Waals (vdW) epitaxial substrate are investigated using first-principles calculations. We show that the structures and electronic properties of mono- and bilayer GaN are hardly affected when deposited on the vdW substrate comprising a graphene sheet placed on the GaN(0001) bulk surface. A weak attractive interaction is found to work between the 2D GaNs and vdW substrate, which is still sufficient to maintain the 2D GaNs on the substrate and could also be exploited to control their stability. The present findings demonstrate that the vdW substrate is propitious to grow and hold the 2D GaNs without altering their intrinsic properties, in contrast to previously examined metal substrates.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0068939</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Bilayers ; Control stability ; First principles ; Gallium nitrides ; Graphene ; Substrates</subject><ispartof>Applied physics letters, 2021-11, Vol.119 (20)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-fc070c11917b0e0020841e99bf610971f0c505c639fa7eb0281ca466c32088263</citedby><cites>FETCH-LOGICAL-c327t-fc070c11917b0e0020841e99bf610971f0c505c639fa7eb0281ca466c32088263</cites><orcidid>0000-0002-5708-8723 ; 0000-0003-4702-0933 ; 0000-0002-2855-9880 ; 0000-0002-8308-6211</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0068939$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4497,27903,27904,76130</link.rule.ids></links><search><creatorcontrib>Yayama, Tomoe</creatorcontrib><creatorcontrib>Lu, Anh Khoa Augustin</creatorcontrib><creatorcontrib>Morishita, Tetsuya</creatorcontrib><creatorcontrib>Nakanishi, Takeshi</creatorcontrib><title>First-principles study of two-dimensional gallium-nitrides on van der Waals epitaxial substrate</title><title>Applied physics letters</title><description>The structural and electronic properties of two-dimensional gallium nitrides (2D GaNs) on a van der Waals (vdW) epitaxial substrate are investigated using first-principles calculations. We show that the structures and electronic properties of mono- and bilayer GaN are hardly affected when deposited on the vdW substrate comprising a graphene sheet placed on the GaN(0001) bulk surface. A weak attractive interaction is found to work between the 2D GaNs and vdW substrate, which is still sufficient to maintain the 2D GaNs on the substrate and could also be exploited to control their stability. The present findings demonstrate that the vdW substrate is propitious to grow and hold the 2D GaNs without altering their intrinsic properties, in contrast to previously examined metal substrates.</description><subject>Applied physics</subject><subject>Bilayers</subject><subject>Control stability</subject><subject>First principles</subject><subject>Gallium nitrides</subject><subject>Graphene</subject><subject>Substrates</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp90MFKAzEQBuAgCtbqwTcIeFJInWy6yeYoxaogeFE8hmw2KynbzZpkq317Iy16EDyFId8MMz9C5xRmFDi7LmcAvJJMHqAJBSEIo7Q6RBMAYITLkh6jkxhXuSwLxiZILV2IiQzB9cYNnY04prHZYt_i9OFJ49a2j873usNvuuvcuCa9S8E1Wfoeb3SPGxvwq9ZdxHZwSX-6bONYxxR0sqfoqM1f9mz_TtHL8vZ5cU8en-4eFjePxLBCJNIaEGAolVTUYAEKqObUSlm3nIIUtAVTQmk4k60WtoaiokbPOc_dUFUFZ1N0sZs7BP8-2pjUyo8hrx1VUUohQcyLIqvLnTLBxxhsq_Lhax22ioL6zk-Vap9ftlc7G02-KuUMfvDGh1-ohqb9D_-d_AUgbn4r</recordid><startdate>20211115</startdate><enddate>20211115</enddate><creator>Yayama, Tomoe</creator><creator>Lu, Anh Khoa Augustin</creator><creator>Morishita, Tetsuya</creator><creator>Nakanishi, Takeshi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5708-8723</orcidid><orcidid>https://orcid.org/0000-0003-4702-0933</orcidid><orcidid>https://orcid.org/0000-0002-2855-9880</orcidid><orcidid>https://orcid.org/0000-0002-8308-6211</orcidid></search><sort><creationdate>20211115</creationdate><title>First-principles study of two-dimensional gallium-nitrides on van der Waals epitaxial substrate</title><author>Yayama, Tomoe ; Lu, Anh Khoa Augustin ; Morishita, Tetsuya ; Nakanishi, Takeshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-fc070c11917b0e0020841e99bf610971f0c505c639fa7eb0281ca466c32088263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Applied physics</topic><topic>Bilayers</topic><topic>Control stability</topic><topic>First principles</topic><topic>Gallium nitrides</topic><topic>Graphene</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yayama, Tomoe</creatorcontrib><creatorcontrib>Lu, Anh Khoa Augustin</creatorcontrib><creatorcontrib>Morishita, Tetsuya</creatorcontrib><creatorcontrib>Nakanishi, Takeshi</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yayama, Tomoe</au><au>Lu, Anh Khoa Augustin</au><au>Morishita, Tetsuya</au><au>Nakanishi, Takeshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>First-principles study of two-dimensional gallium-nitrides on van der Waals epitaxial substrate</atitle><jtitle>Applied physics letters</jtitle><date>2021-11-15</date><risdate>2021</risdate><volume>119</volume><issue>20</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The structural and electronic properties of two-dimensional gallium nitrides (2D GaNs) on a van der Waals (vdW) epitaxial substrate are investigated using first-principles calculations. We show that the structures and electronic properties of mono- and bilayer GaN are hardly affected when deposited on the vdW substrate comprising a graphene sheet placed on the GaN(0001) bulk surface. A weak attractive interaction is found to work between the 2D GaNs and vdW substrate, which is still sufficient to maintain the 2D GaNs on the substrate and could also be exploited to control their stability. The present findings demonstrate that the vdW substrate is propitious to grow and hold the 2D GaNs without altering their intrinsic properties, in contrast to previously examined metal substrates.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0068939</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-5708-8723</orcidid><orcidid>https://orcid.org/0000-0003-4702-0933</orcidid><orcidid>https://orcid.org/0000-0002-2855-9880</orcidid><orcidid>https://orcid.org/0000-0002-8308-6211</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2021-11, Vol.119 (20) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_5_0068939 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Bilayers Control stability First principles Gallium nitrides Graphene Substrates |
| title | First-principles study of two-dimensional gallium-nitrides on van der Waals epitaxial substrate |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T06%3A46%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=First-principles%20study%20of%20two-dimensional%20gallium-nitrides%20on%20van%20der%20Waals%20epitaxial%20substrate&rft.jtitle=Applied%20physics%20letters&rft.au=Yayama,%20Tomoe&rft.date=2021-11-15&rft.volume=119&rft.issue=20&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/5.0068939&rft_dat=%3Cproquest_scita%3E2597907422%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2597907422&rft_id=info:pmid/&rfr_iscdi=true |