High and broadband sensitivity front-side illuminated InGaAs photo field-effect transistors (photoFETs) with SWIR transparent conductive oxide (TCO) gate

By using a transparent conductive oxide (TCO) gate for the short-wave infrared (SWIR) region, the high optical responsivity of 180 A/W at 1550 nm and the broadband photosensitivity up to 1800 nm are demonstrated in InGaAs photo field-effect transistors (photoFETs) with front-side illumination (FSI)....

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Veröffentlicht in:	Applied physics letters 2021-11, Vol.119 (19)
Hauptverfasser:	Maeda, Tatsuro, Oishi, Kazuaki, Ishii, Hiroyuki, Chang, Wen Hsin, Shimizu, Tetsuji, Endoh, Akira, Fujishiro, Hiroki, Koida, Takashi
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Broadband Field effect transistors Indium gallium arsenides Optical communication Photodiodes Photosensitivity Photovoltaic effect Semiconductor devices Short wave radiation Transistors
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