The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices
The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities of unclear physical origin at the GaN r...
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Veröffentlicht in: | Applied physics letters 2021-05, Vol.118 (22) |
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creator | Fu, Kai Fu, Houqiang Deng, Xuguang Su, Po-Yi Liu, Hanxiao Hatch, Kevin Cheng, Chi-Yin Messina, Daniel Meidanshahi, Reza Vatan Peri, Prudhvi Yang, Chen Yang, Tsung-Han Montes, Jossue Zhou, Jingan Qi, Xin Goodnick, Stephen M. Ponce, Fernando A. Smith, David J. Nemanich, Robert Zhao, Yuji |
description | The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities of unclear physical origin at the GaN regrowth interface has proven to be a major bottleneck. This paper investigates the origin of Si contamination at the epitaxial GaN-on-GaN interface and demonstrates an approach that markedly reduces its impact on device performance. An optimized dry-etching approach combined with UV-ozone and chemical etching is shown to greatly reduce the Si concentration levels at the regrowth interface, and a significant improvement in a reverse leakage current in vertical GaN-based p–n diodes is achieved. |
doi_str_mv | 10.1063/5.0049473 |
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The presence of silicon (Si) impurities of unclear physical origin at the GaN regrowth interface has proven to be a major bottleneck. This paper investigates the origin of Si contamination at the epitaxial GaN-on-GaN interface and demonstrates an approach that markedly reduces its impact on device performance. An optimized dry-etching approach combined with UV-ozone and chemical etching is shown to greatly reduce the Si concentration levels at the regrowth interface, and a significant improvement in a reverse leakage current in vertical GaN-based p–n diodes is achieved.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0049473</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Chemical etching ; Contamination ; Electronic devices ; Gallium nitrides ; Leakage current ; Silicon</subject><ispartof>Applied physics letters, 2021-05, Vol.118 (22)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). 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The presence of silicon (Si) impurities of unclear physical origin at the GaN regrowth interface has proven to be a major bottleneck. This paper investigates the origin of Si contamination at the epitaxial GaN-on-GaN interface and demonstrates an approach that markedly reduces its impact on device performance. An optimized dry-etching approach combined with UV-ozone and chemical etching is shown to greatly reduce the Si concentration levels at the regrowth interface, and a significant improvement in a reverse leakage current in vertical GaN-based p–n diodes is achieved.</description><subject>Applied physics</subject><subject>Chemical etching</subject><subject>Contamination</subject><subject>Electronic devices</subject><subject>Gallium nitrides</subject><subject>Leakage current</subject><subject>Silicon</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqdkEFLAzEQhYMoWKsH_0HQk8LWZLPJZo9StApFD9ZzyGaTbkq7WZO0xX9v6ha8CwOPgW_ezDwArjGaYMTIA50gVFRFSU7ACKOyzAjG_BSMEEIkYxXF5-AihFVqaU7ICMhFq6Hd9FJF6Ay0XdTeSGXlGn5YqFwX5cZ2MlrXwVQz-Za5LksCvV56t48tNM7D1i5b2Lu99nCnfbQqzTd6Z5UOl-DMyHXQV0cdg8_np8X0JZu_z16nj_NMFZTGjHFUk1wVhCBd0YrKsjG8waqWNZWISmOkUTnLmaGKIlNXmGjNKUbK5JrlnIzBzeDrQrQiKBu1atMDnVZR4JJTyssE3Q5Q793XVocoVm7ru3SXyClhiHGcjMfgbqCUdyF4bUTv7Ub6b4GROMQsqDjGnNj7gT1s_M3pf_DO-T9Q9I0hP9QYisY</recordid><startdate>20210531</startdate><enddate>20210531</enddate><creator>Fu, Kai</creator><creator>Fu, Houqiang</creator><creator>Deng, Xuguang</creator><creator>Su, Po-Yi</creator><creator>Liu, Hanxiao</creator><creator>Hatch, Kevin</creator><creator>Cheng, Chi-Yin</creator><creator>Messina, Daniel</creator><creator>Meidanshahi, Reza Vatan</creator><creator>Peri, Prudhvi</creator><creator>Yang, Chen</creator><creator>Yang, Tsung-Han</creator><creator>Montes, Jossue</creator><creator>Zhou, Jingan</creator><creator>Qi, Xin</creator><creator>Goodnick, Stephen M.</creator><creator>Ponce, Fernando A.</creator><creator>Smith, David J.</creator><creator>Nemanich, Robert</creator><creator>Zhao, Yuji</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0001-8339-783X</orcidid><orcidid>https://orcid.org/0000-0002-1275-9386</orcidid><orcidid>https://orcid.org/0000-0002-2338-441X</orcidid><orcidid>https://orcid.org/0000-0002-3674-5480</orcidid><orcidid>https://orcid.org/0000-0002-1125-8328</orcidid><orcidid>https://orcid.org/0000-0002-4052-8681</orcidid><orcidid>https://orcid.org/0000-0003-3106-7542</orcidid><orcidid>https://orcid.org/0000-0003-3576-8178</orcidid><orcidid>https://orcid.org/0000-0002-9405-7512</orcidid><orcidid>https://orcid.org/0000-0002-3009-0882</orcidid><orcidid>https://orcid.org/0000-0002-7057-7783</orcidid><orcidid>https://orcid.org/0000000335768178</orcidid><orcidid>https://orcid.org/0000000230090882</orcidid><orcidid>https://orcid.org/0000000211258328</orcidid><orcidid>https://orcid.org/0000000331067542</orcidid><orcidid>https://orcid.org/000000018339783X</orcidid><orcidid>https://orcid.org/000000022338441X</orcidid><orcidid>https://orcid.org/0000000212759386</orcidid><orcidid>https://orcid.org/0000000294057512</orcidid><orcidid>https://orcid.org/0000000240528681</orcidid><orcidid>https://orcid.org/0000000236745480</orcidid><orcidid>https://orcid.org/0000000270577783</orcidid></search><sort><creationdate>20210531</creationdate><title>The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices</title><author>Fu, Kai ; 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The presence of silicon (Si) impurities of unclear physical origin at the GaN regrowth interface has proven to be a major bottleneck. This paper investigates the origin of Si contamination at the epitaxial GaN-on-GaN interface and demonstrates an approach that markedly reduces its impact on device performance. An optimized dry-etching approach combined with UV-ozone and chemical etching is shown to greatly reduce the Si concentration levels at the regrowth interface, and a significant improvement in a reverse leakage current in vertical GaN-based p–n diodes is achieved.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0049473</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-8339-783X</orcidid><orcidid>https://orcid.org/0000-0002-1275-9386</orcidid><orcidid>https://orcid.org/0000-0002-2338-441X</orcidid><orcidid>https://orcid.org/0000-0002-3674-5480</orcidid><orcidid>https://orcid.org/0000-0002-1125-8328</orcidid><orcidid>https://orcid.org/0000-0002-4052-8681</orcidid><orcidid>https://orcid.org/0000-0003-3106-7542</orcidid><orcidid>https://orcid.org/0000-0003-3576-8178</orcidid><orcidid>https://orcid.org/0000-0002-9405-7512</orcidid><orcidid>https://orcid.org/0000-0002-3009-0882</orcidid><orcidid>https://orcid.org/0000-0002-7057-7783</orcidid><orcidid>https://orcid.org/0000000335768178</orcidid><orcidid>https://orcid.org/0000000230090882</orcidid><orcidid>https://orcid.org/0000000211258328</orcidid><orcidid>https://orcid.org/0000000331067542</orcidid><orcidid>https://orcid.org/000000018339783X</orcidid><orcidid>https://orcid.org/000000022338441X</orcidid><orcidid>https://orcid.org/0000000212759386</orcidid><orcidid>https://orcid.org/0000000294057512</orcidid><orcidid>https://orcid.org/0000000240528681</orcidid><orcidid>https://orcid.org/0000000236745480</orcidid><orcidid>https://orcid.org/0000000270577783</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Applied physics Chemical etching Contamination Electronic devices Gallium nitrides Leakage current Silicon |
title | The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices |
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