GaN-based pyramidal quantum structures for micro-size light-emitting diode applications
GaN-based pyramidal quantum structures, InGaN nanostructures located on top of micro-sized GaN pyramids, were fabricated by selective-area growth on SiC substrates by means of hot-wall metal-organic chemical vapor deposition. Arrays of GaN-based pyramidal structures exhibit micro-size pyramids posse...
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Veröffentlicht in: | Applied physics letters 2021-04, Vol.118 (14) |
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creator | Le, Son Phuong Hsu, Chih-Wei Martinovic, Ivan Holtz, Per-Olof |
description | GaN-based pyramidal quantum structures, InGaN nanostructures located on top of micro-sized GaN pyramids, were fabricated by selective-area growth on SiC substrates by means of hot-wall metal-organic chemical vapor deposition. Arrays of GaN-based pyramidal structures exhibit micro-size pyramids possessing high uniformity, precise hexagonal bases, and InGaN/GaN quantum-well layers with well-defined interfaces. Each pyramid comprises a p-i-n InGaN/GaN structure, which is separated from that of other pyramids by a dielectric layer, serving as a building block for micro-emitters. Moreover, interconnected micro-size light-emitting diodes (microLEDs) built on the GaN-based pyramidal quantum structures were demonstrated, resulting in well-determined electroluminescence in the near-ultraviolet regime with negligible spectral shifts at high current levels. The results elucidated the rewards for development of these light-emitting designs and their potential for microLED applications. |
doi_str_mv | 10.1063/5.0048684 |
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fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_5_0048684</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2508690636</sourcerecordid><originalsourceid>FETCH-LOGICAL-c365t-3898ffc5522173867206c14e0b591bc3b0fffebf7281d7fe37dd279c23952ac73</originalsourceid><addsrcrecordid>eNqdkEtLAzEUhYMoWKsL_8GAK4XUPCaTmWWpWgXRjY9lyGSSmjLTTPNQ6q93tEX3ri4XPg7nfACcYjTBqKCXbIJQXhZlvgdGGHEOKcblPhghhCgsKoYPwVEIy-FlhNIReJ3LB1jLoJus33jZ2Ua22TrJVUxdFqJPKiavQ2aczzqrvIPBfuqstYu3CHVnY7SrRdZY1-hM9n1rlYzWrcIxODCyDfpkd8fg-eb6aXYL7x_nd7PpPVS0YBHSsiqNUYwRgjktC05QoXCuUc0qXCtaI2OMrg0nJW640ZQ3DeGVIrRiRCpOxwBuc8OH7lMtem876TfCSSuu7MtUOL8QrU0Cc5ZTPPBnW773bp10iGLpkl8NFQVhqCyqQWIxUOdbahgcgtfmNxcj8e1ZMLHzPLAXuwbKxp_x_4Pfnf8DRd8Y-gWc8oxN</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2508690636</pqid></control><display><type>article</type><title>GaN-based pyramidal quantum structures for micro-size light-emitting diode applications</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Le, Son Phuong ; Hsu, Chih-Wei ; Martinovic, Ivan ; Holtz, Per-Olof</creator><creatorcontrib>Le, Son Phuong ; Hsu, Chih-Wei ; Martinovic, Ivan ; Holtz, Per-Olof</creatorcontrib><description>GaN-based pyramidal quantum structures, InGaN nanostructures located on top of micro-sized GaN pyramids, were fabricated by selective-area growth on SiC substrates by means of hot-wall metal-organic chemical vapor deposition. Arrays of GaN-based pyramidal structures exhibit micro-size pyramids possessing high uniformity, precise hexagonal bases, and InGaN/GaN quantum-well layers with well-defined interfaces. Each pyramid comprises a p-i-n InGaN/GaN structure, which is separated from that of other pyramids by a dielectric layer, serving as a building block for micro-emitters. Moreover, interconnected micro-size light-emitting diodes (microLEDs) built on the GaN-based pyramidal quantum structures were demonstrated, resulting in well-determined electroluminescence in the near-ultraviolet regime with negligible spectral shifts at high current levels. The results elucidated the rewards for development of these light-emitting designs and their potential for microLED applications.</description><identifier>ISSN: 0003-6951</identifier><identifier>ISSN: 1077-3118</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0048684</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Electroluminescence ; Emitters ; Gallium nitrides ; Indium gallium nitrides ; Light emitting diodes ; Metalorganic chemical vapor deposition ; Organic chemicals ; Organic chemistry ; Pyramids ; Quantum phenomena ; Quantum wells ; Silicon substrates</subject><ispartof>Applied physics letters, 2021-04, Vol.118 (14)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c365t-3898ffc5522173867206c14e0b591bc3b0fffebf7281d7fe37dd279c23952ac73</citedby><cites>FETCH-LOGICAL-c365t-3898ffc5522173867206c14e0b591bc3b0fffebf7281d7fe37dd279c23952ac73</cites><orcidid>0000-0001-9593-5965 ; 0000-0001-9792-563X ; 0000-0002-6661-2603</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0048684$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,4512,27924,27925,76384</link.rule.ids><backlink>$$Uhttps://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-175431$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Le, Son Phuong</creatorcontrib><creatorcontrib>Hsu, Chih-Wei</creatorcontrib><creatorcontrib>Martinovic, Ivan</creatorcontrib><creatorcontrib>Holtz, Per-Olof</creatorcontrib><title>GaN-based pyramidal quantum structures for micro-size light-emitting diode applications</title><title>Applied physics letters</title><description>GaN-based pyramidal quantum structures, InGaN nanostructures located on top of micro-sized GaN pyramids, were fabricated by selective-area growth on SiC substrates by means of hot-wall metal-organic chemical vapor deposition. Arrays of GaN-based pyramidal structures exhibit micro-size pyramids possessing high uniformity, precise hexagonal bases, and InGaN/GaN quantum-well layers with well-defined interfaces. Each pyramid comprises a p-i-n InGaN/GaN structure, which is separated from that of other pyramids by a dielectric layer, serving as a building block for micro-emitters. Moreover, interconnected micro-size light-emitting diodes (microLEDs) built on the GaN-based pyramidal quantum structures were demonstrated, resulting in well-determined electroluminescence in the near-ultraviolet regime with negligible spectral shifts at high current levels. The results elucidated the rewards for development of these light-emitting designs and their potential for microLED applications.</description><subject>Applied physics</subject><subject>Electroluminescence</subject><subject>Emitters</subject><subject>Gallium nitrides</subject><subject>Indium gallium nitrides</subject><subject>Light emitting diodes</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Organic chemicals</subject><subject>Organic chemistry</subject><subject>Pyramids</subject><subject>Quantum phenomena</subject><subject>Quantum wells</subject><subject>Silicon substrates</subject><issn>0003-6951</issn><issn>1077-3118</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqdkEtLAzEUhYMoWKsL_8GAK4XUPCaTmWWpWgXRjY9lyGSSmjLTTPNQ6q93tEX3ri4XPg7nfACcYjTBqKCXbIJQXhZlvgdGGHEOKcblPhghhCgsKoYPwVEIy-FlhNIReJ3LB1jLoJus33jZ2Ua22TrJVUxdFqJPKiavQ2aczzqrvIPBfuqstYu3CHVnY7SrRdZY1-hM9n1rlYzWrcIxODCyDfpkd8fg-eb6aXYL7x_nd7PpPVS0YBHSsiqNUYwRgjktC05QoXCuUc0qXCtaI2OMrg0nJW640ZQ3DeGVIrRiRCpOxwBuc8OH7lMtem876TfCSSuu7MtUOL8QrU0Cc5ZTPPBnW773bp10iGLpkl8NFQVhqCyqQWIxUOdbahgcgtfmNxcj8e1ZMLHzPLAXuwbKxp_x_4Pfnf8DRd8Y-gWc8oxN</recordid><startdate>20210405</startdate><enddate>20210405</enddate><creator>Le, Son Phuong</creator><creator>Hsu, Chih-Wei</creator><creator>Martinovic, Ivan</creator><creator>Holtz, Per-Olof</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>ADTPV</scope><scope>AOWAS</scope><scope>DG8</scope><orcidid>https://orcid.org/0000-0001-9593-5965</orcidid><orcidid>https://orcid.org/0000-0001-9792-563X</orcidid><orcidid>https://orcid.org/0000-0002-6661-2603</orcidid></search><sort><creationdate>20210405</creationdate><title>GaN-based pyramidal quantum structures for micro-size light-emitting diode applications</title><author>Le, Son Phuong ; Hsu, Chih-Wei ; Martinovic, Ivan ; Holtz, Per-Olof</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c365t-3898ffc5522173867206c14e0b591bc3b0fffebf7281d7fe37dd279c23952ac73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Applied physics</topic><topic>Electroluminescence</topic><topic>Emitters</topic><topic>Gallium nitrides</topic><topic>Indium gallium nitrides</topic><topic>Light emitting diodes</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Organic chemicals</topic><topic>Organic chemistry</topic><topic>Pyramids</topic><topic>Quantum phenomena</topic><topic>Quantum wells</topic><topic>Silicon substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Le, Son Phuong</creatorcontrib><creatorcontrib>Hsu, Chih-Wei</creatorcontrib><creatorcontrib>Martinovic, Ivan</creatorcontrib><creatorcontrib>Holtz, Per-Olof</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>SwePub</collection><collection>SwePub Articles</collection><collection>SWEPUB Linköpings universitet</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Le, Son Phuong</au><au>Hsu, Chih-Wei</au><au>Martinovic, Ivan</au><au>Holtz, Per-Olof</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaN-based pyramidal quantum structures for micro-size light-emitting diode applications</atitle><jtitle>Applied physics letters</jtitle><date>2021-04-05</date><risdate>2021</risdate><volume>118</volume><issue>14</issue><issn>0003-6951</issn><issn>1077-3118</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>GaN-based pyramidal quantum structures, InGaN nanostructures located on top of micro-sized GaN pyramids, were fabricated by selective-area growth on SiC substrates by means of hot-wall metal-organic chemical vapor deposition. Arrays of GaN-based pyramidal structures exhibit micro-size pyramids possessing high uniformity, precise hexagonal bases, and InGaN/GaN quantum-well layers with well-defined interfaces. Each pyramid comprises a p-i-n InGaN/GaN structure, which is separated from that of other pyramids by a dielectric layer, serving as a building block for micro-emitters. Moreover, interconnected micro-size light-emitting diodes (microLEDs) built on the GaN-based pyramidal quantum structures were demonstrated, resulting in well-determined electroluminescence in the near-ultraviolet regime with negligible spectral shifts at high current levels. The results elucidated the rewards for development of these light-emitting designs and their potential for microLED applications.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0048684</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-9593-5965</orcidid><orcidid>https://orcid.org/0000-0001-9792-563X</orcidid><orcidid>https://orcid.org/0000-0002-6661-2603</orcidid></addata></record> |
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subjects | Applied physics Electroluminescence Emitters Gallium nitrides Indium gallium nitrides Light emitting diodes Metalorganic chemical vapor deposition Organic chemicals Organic chemistry Pyramids Quantum phenomena Quantum wells Silicon substrates |
title | GaN-based pyramidal quantum structures for micro-size light-emitting diode applications |
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