GaN-based pyramidal quantum structures for micro-size light-emitting diode applications

GaN-based pyramidal quantum structures, InGaN nanostructures located on top of micro-sized GaN pyramids, were fabricated by selective-area growth on SiC substrates by means of hot-wall metal-organic chemical vapor deposition. Arrays of GaN-based pyramidal structures exhibit micro-size pyramids posse...

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Veröffentlicht in:Applied physics letters 2021-04, Vol.118 (14)
Hauptverfasser: Le, Son Phuong, Hsu, Chih-Wei, Martinovic, Ivan, Holtz, Per-Olof
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container_title Applied physics letters
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creator Le, Son Phuong
Hsu, Chih-Wei
Martinovic, Ivan
Holtz, Per-Olof
description GaN-based pyramidal quantum structures, InGaN nanostructures located on top of micro-sized GaN pyramids, were fabricated by selective-area growth on SiC substrates by means of hot-wall metal-organic chemical vapor deposition. Arrays of GaN-based pyramidal structures exhibit micro-size pyramids possessing high uniformity, precise hexagonal bases, and InGaN/GaN quantum-well layers with well-defined interfaces. Each pyramid comprises a p-i-n InGaN/GaN structure, which is separated from that of other pyramids by a dielectric layer, serving as a building block for micro-emitters. Moreover, interconnected micro-size light-emitting diodes (microLEDs) built on the GaN-based pyramidal quantum structures were demonstrated, resulting in well-determined electroluminescence in the near-ultraviolet regime with negligible spectral shifts at high current levels. The results elucidated the rewards for development of these light-emitting designs and their potential for microLED applications.
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subjects Applied physics
Electroluminescence
Emitters
Gallium nitrides
Indium gallium nitrides
Light emitting diodes
Metalorganic chemical vapor deposition
Organic chemicals
Organic chemistry
Pyramids
Quantum phenomena
Quantum wells
Silicon substrates
title GaN-based pyramidal quantum structures for micro-size light-emitting diode applications
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