Dominant recombination path in low-bandgap kesterite CZTSe(S) solar cells from red light induced metastability

Hetero-junction kesterite Cu2ZnSn(S,Se)4 solar cells with low bandgap obtained from three different methods of fabrication were exposed to red light illumination, and the changes observed in their electronic properties due to this exposure were studied via open circuit voltage transients, admittance...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2021-05, Vol.129 (20)
Hauptverfasser: Lyam, Mbafan S., Hölscher, Torsten, Maiberg, Matthias, Cabas-Vidani, Antonio, Hernandez-Martinez, Alejandro, Tampo, Hitoshi, Scheer, Roland
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 20
container_start_page
container_title Journal of applied physics
container_volume 129
creator Lyam, Mbafan S.
Hölscher, Torsten
Maiberg, Matthias
Cabas-Vidani, Antonio
Hernandez-Martinez, Alejandro
Tampo, Hitoshi
Scheer, Roland
description Hetero-junction kesterite Cu2ZnSn(S,Se)4 solar cells with low bandgap obtained from three different methods of fabrication were exposed to red light illumination, and the changes observed in their electronic properties due to this exposure were studied via open circuit voltage transients, admittance spectroscopy, capacitance voltage profiling techniques, and SCAPS simulation fits to experimental data. The results from the aforementioned techniques, in combination with temperature-dependent current voltage analysis, can be used to reveal the dominant Shockley–Read–Hall recombination path at open circuit voltage. We also derived analytical expressions for the activation energy of the saturation current density and the diode quality factor for the specific case of a solar cell device that has no type inversion at the absorber/buffer interface and is limited by interface recombination in the open circuit condition. It is found that the dominant recombination pathway for the low bandgap Cu2ZnSn(S,Se)4 solar cells under consideration is located in the space charge region and not at the absorber/buffer interface.
doi_str_mv 10.1063/5.0045324
format Article
fullrecord <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_5_0045324</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2531781401</sourcerecordid><originalsourceid>FETCH-LOGICAL-c362t-ae0d2f18445df41be8f267379da74e83cda000fcc6aff2c55e6567e64987817f3</originalsourceid><addsrcrecordid>eNp90E1LwzAYB_AgCs7pwW8Q8KJC55O2adqjzFcYeNi8eClZXrbMtqlJpuzbG93Qg-ApT-CX_xP-CJ0SGBEosis6AshpluZ7aECgrBJGKeyjAUBKkrJi1SE68n4FQEiZVQPU3djWdLwL2Clh23mcg7Ed7nlYYtPhxn4kc97JBe_xq_JBORMUHr_Mpup8eoG9bbjDQjWNx9rZNqZI3JjFMsTHci3irVWB-8DnpjFhc4wONG-8OtmdQ_R8dzsbPySTp_vH8fUkEVmRhoQrkKkmZZ5TqXMyV6VOC5axSnKWqzITkgOAFqLgWqeCUlXQgqkir0pWEqazITrb5vbOvq3jv-uVXbsurqxTmpGIciBRXWyVcNZ7p3TdO9Nyt6kJ1F911rTe1Rnt5dZ6YcJ3Rz_43bpfWPdS_4f_Jn8C5SyEAg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2531781401</pqid></control><display><type>article</type><title>Dominant recombination path in low-bandgap kesterite CZTSe(S) solar cells from red light induced metastability</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Lyam, Mbafan S. ; Hölscher, Torsten ; Maiberg, Matthias ; Cabas-Vidani, Antonio ; Hernandez-Martinez, Alejandro ; Tampo, Hitoshi ; Scheer, Roland</creator><creatorcontrib>Lyam, Mbafan S. ; Hölscher, Torsten ; Maiberg, Matthias ; Cabas-Vidani, Antonio ; Hernandez-Martinez, Alejandro ; Tampo, Hitoshi ; Scheer, Roland</creatorcontrib><description>Hetero-junction kesterite Cu2ZnSn(S,Se)4 solar cells with low bandgap obtained from three different methods of fabrication were exposed to red light illumination, and the changes observed in their electronic properties due to this exposure were studied via open circuit voltage transients, admittance spectroscopy, capacitance voltage profiling techniques, and SCAPS simulation fits to experimental data. The results from the aforementioned techniques, in combination with temperature-dependent current voltage analysis, can be used to reveal the dominant Shockley–Read–Hall recombination path at open circuit voltage. We also derived analytical expressions for the activation energy of the saturation current density and the diode quality factor for the specific case of a solar cell device that has no type inversion at the absorber/buffer interface and is limited by interface recombination in the open circuit condition. It is found that the dominant recombination pathway for the low bandgap Cu2ZnSn(S,Se)4 solar cells under consideration is located in the space charge region and not at the absorber/buffer interface.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0045324</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Absorbers ; Buffers ; Copper zinc tin selenide ; Electrical impedance ; Electrical surges ; Electronic properties ; Energy gap ; Light ; Mathematical analysis ; Open circuit voltage ; Photovoltaic cells ; Q factors ; Solar cells ; Space charge ; Temperature dependence</subject><ispartof>Journal of applied physics, 2021-05, Vol.129 (20)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c362t-ae0d2f18445df41be8f267379da74e83cda000fcc6aff2c55e6567e64987817f3</citedby><cites>FETCH-LOGICAL-c362t-ae0d2f18445df41be8f267379da74e83cda000fcc6aff2c55e6567e64987817f3</cites><orcidid>0000-0002-2692-5859 ; 0000-0001-5007-3425 ; 0000-0002-0690-484X ; 0000-0002-8578-235X ; 0000-0002-0895-3864 ; 0000-0002-6666-0285</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/5.0045324$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Lyam, Mbafan S.</creatorcontrib><creatorcontrib>Hölscher, Torsten</creatorcontrib><creatorcontrib>Maiberg, Matthias</creatorcontrib><creatorcontrib>Cabas-Vidani, Antonio</creatorcontrib><creatorcontrib>Hernandez-Martinez, Alejandro</creatorcontrib><creatorcontrib>Tampo, Hitoshi</creatorcontrib><creatorcontrib>Scheer, Roland</creatorcontrib><title>Dominant recombination path in low-bandgap kesterite CZTSe(S) solar cells from red light induced metastability</title><title>Journal of applied physics</title><description>Hetero-junction kesterite Cu2ZnSn(S,Se)4 solar cells with low bandgap obtained from three different methods of fabrication were exposed to red light illumination, and the changes observed in their electronic properties due to this exposure were studied via open circuit voltage transients, admittance spectroscopy, capacitance voltage profiling techniques, and SCAPS simulation fits to experimental data. The results from the aforementioned techniques, in combination with temperature-dependent current voltage analysis, can be used to reveal the dominant Shockley–Read–Hall recombination path at open circuit voltage. We also derived analytical expressions for the activation energy of the saturation current density and the diode quality factor for the specific case of a solar cell device that has no type inversion at the absorber/buffer interface and is limited by interface recombination in the open circuit condition. It is found that the dominant recombination pathway for the low bandgap Cu2ZnSn(S,Se)4 solar cells under consideration is located in the space charge region and not at the absorber/buffer interface.</description><subject>Absorbers</subject><subject>Buffers</subject><subject>Copper zinc tin selenide</subject><subject>Electrical impedance</subject><subject>Electrical surges</subject><subject>Electronic properties</subject><subject>Energy gap</subject><subject>Light</subject><subject>Mathematical analysis</subject><subject>Open circuit voltage</subject><subject>Photovoltaic cells</subject><subject>Q factors</subject><subject>Solar cells</subject><subject>Space charge</subject><subject>Temperature dependence</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp90E1LwzAYB_AgCs7pwW8Q8KJC55O2adqjzFcYeNi8eClZXrbMtqlJpuzbG93Qg-ApT-CX_xP-CJ0SGBEosis6AshpluZ7aECgrBJGKeyjAUBKkrJi1SE68n4FQEiZVQPU3djWdLwL2Clh23mcg7Ed7nlYYtPhxn4kc97JBe_xq_JBORMUHr_Mpup8eoG9bbjDQjWNx9rZNqZI3JjFMsTHci3irVWB-8DnpjFhc4wONG-8OtmdQ_R8dzsbPySTp_vH8fUkEVmRhoQrkKkmZZ5TqXMyV6VOC5axSnKWqzITkgOAFqLgWqeCUlXQgqkir0pWEqazITrb5vbOvq3jv-uVXbsurqxTmpGIciBRXWyVcNZ7p3TdO9Nyt6kJ1F911rTe1Rnt5dZ6YcJ3Rz_43bpfWPdS_4f_Jn8C5SyEAg</recordid><startdate>20210528</startdate><enddate>20210528</enddate><creator>Lyam, Mbafan S.</creator><creator>Hölscher, Torsten</creator><creator>Maiberg, Matthias</creator><creator>Cabas-Vidani, Antonio</creator><creator>Hernandez-Martinez, Alejandro</creator><creator>Tampo, Hitoshi</creator><creator>Scheer, Roland</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2692-5859</orcidid><orcidid>https://orcid.org/0000-0001-5007-3425</orcidid><orcidid>https://orcid.org/0000-0002-0690-484X</orcidid><orcidid>https://orcid.org/0000-0002-8578-235X</orcidid><orcidid>https://orcid.org/0000-0002-0895-3864</orcidid><orcidid>https://orcid.org/0000-0002-6666-0285</orcidid></search><sort><creationdate>20210528</creationdate><title>Dominant recombination path in low-bandgap kesterite CZTSe(S) solar cells from red light induced metastability</title><author>Lyam, Mbafan S. ; Hölscher, Torsten ; Maiberg, Matthias ; Cabas-Vidani, Antonio ; Hernandez-Martinez, Alejandro ; Tampo, Hitoshi ; Scheer, Roland</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c362t-ae0d2f18445df41be8f267379da74e83cda000fcc6aff2c55e6567e64987817f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Absorbers</topic><topic>Buffers</topic><topic>Copper zinc tin selenide</topic><topic>Electrical impedance</topic><topic>Electrical surges</topic><topic>Electronic properties</topic><topic>Energy gap</topic><topic>Light</topic><topic>Mathematical analysis</topic><topic>Open circuit voltage</topic><topic>Photovoltaic cells</topic><topic>Q factors</topic><topic>Solar cells</topic><topic>Space charge</topic><topic>Temperature dependence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lyam, Mbafan S.</creatorcontrib><creatorcontrib>Hölscher, Torsten</creatorcontrib><creatorcontrib>Maiberg, Matthias</creatorcontrib><creatorcontrib>Cabas-Vidani, Antonio</creatorcontrib><creatorcontrib>Hernandez-Martinez, Alejandro</creatorcontrib><creatorcontrib>Tampo, Hitoshi</creatorcontrib><creatorcontrib>Scheer, Roland</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lyam, Mbafan S.</au><au>Hölscher, Torsten</au><au>Maiberg, Matthias</au><au>Cabas-Vidani, Antonio</au><au>Hernandez-Martinez, Alejandro</au><au>Tampo, Hitoshi</au><au>Scheer, Roland</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dominant recombination path in low-bandgap kesterite CZTSe(S) solar cells from red light induced metastability</atitle><jtitle>Journal of applied physics</jtitle><date>2021-05-28</date><risdate>2021</risdate><volume>129</volume><issue>20</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Hetero-junction kesterite Cu2ZnSn(S,Se)4 solar cells with low bandgap obtained from three different methods of fabrication were exposed to red light illumination, and the changes observed in their electronic properties due to this exposure were studied via open circuit voltage transients, admittance spectroscopy, capacitance voltage profiling techniques, and SCAPS simulation fits to experimental data. The results from the aforementioned techniques, in combination with temperature-dependent current voltage analysis, can be used to reveal the dominant Shockley–Read–Hall recombination path at open circuit voltage. We also derived analytical expressions for the activation energy of the saturation current density and the diode quality factor for the specific case of a solar cell device that has no type inversion at the absorber/buffer interface and is limited by interface recombination in the open circuit condition. It is found that the dominant recombination pathway for the low bandgap Cu2ZnSn(S,Se)4 solar cells under consideration is located in the space charge region and not at the absorber/buffer interface.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0045324</doi><tpages>20</tpages><orcidid>https://orcid.org/0000-0002-2692-5859</orcidid><orcidid>https://orcid.org/0000-0001-5007-3425</orcidid><orcidid>https://orcid.org/0000-0002-0690-484X</orcidid><orcidid>https://orcid.org/0000-0002-8578-235X</orcidid><orcidid>https://orcid.org/0000-0002-0895-3864</orcidid><orcidid>https://orcid.org/0000-0002-6666-0285</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 2021-05, Vol.129 (20)
issn 0021-8979
1089-7550
language eng
recordid cdi_scitation_primary_10_1063_5_0045324
source AIP Journals Complete; Alma/SFX Local Collection
subjects Absorbers
Buffers
Copper zinc tin selenide
Electrical impedance
Electrical surges
Electronic properties
Energy gap
Light
Mathematical analysis
Open circuit voltage
Photovoltaic cells
Q factors
Solar cells
Space charge
Temperature dependence
title Dominant recombination path in low-bandgap kesterite CZTSe(S) solar cells from red light induced metastability
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T11%3A18%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dominant%20recombination%20path%20in%20low-bandgap%20kesterite%20CZTSe(S)%20solar%20cells%20from%20red%20light%20induced%20metastability&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Lyam,%20Mbafan%20S.&rft.date=2021-05-28&rft.volume=129&rft.issue=20&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/5.0045324&rft_dat=%3Cproquest_scita%3E2531781401%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2531781401&rft_id=info:pmid/&rfr_iscdi=true