Dominant recombination path in low-bandgap kesterite CZTSe(S) solar cells from red light induced metastability
Hetero-junction kesterite Cu2ZnSn(S,Se)4 solar cells with low bandgap obtained from three different methods of fabrication were exposed to red light illumination, and the changes observed in their electronic properties due to this exposure were studied via open circuit voltage transients, admittance...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 2021-05, Vol.129 (20) |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 20 |
container_start_page | |
container_title | Journal of applied physics |
container_volume | 129 |
creator | Lyam, Mbafan S. Hölscher, Torsten Maiberg, Matthias Cabas-Vidani, Antonio Hernandez-Martinez, Alejandro Tampo, Hitoshi Scheer, Roland |
description | Hetero-junction kesterite Cu2ZnSn(S,Se)4 solar cells with low bandgap obtained from three different methods of fabrication were exposed to red light illumination, and the changes observed in their electronic properties due to this exposure were studied via open circuit voltage transients, admittance spectroscopy, capacitance voltage profiling techniques, and SCAPS simulation fits to experimental data. The results from the aforementioned techniques, in combination with temperature-dependent current voltage analysis, can be used to reveal the dominant Shockley–Read–Hall recombination path at open circuit voltage. We also derived analytical expressions for the activation energy of the saturation current density and the diode quality factor for the specific case of a solar cell device that has no type inversion at the absorber/buffer interface and is limited by interface recombination in the open circuit condition. It is found that the dominant recombination pathway for the low bandgap Cu2ZnSn(S,Se)4 solar cells under consideration is located in the space charge region and not at the absorber/buffer interface. |
doi_str_mv | 10.1063/5.0045324 |
format | Article |
fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_5_0045324</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2531781401</sourcerecordid><originalsourceid>FETCH-LOGICAL-c362t-ae0d2f18445df41be8f267379da74e83cda000fcc6aff2c55e6567e64987817f3</originalsourceid><addsrcrecordid>eNp90E1LwzAYB_AgCs7pwW8Q8KJC55O2adqjzFcYeNi8eClZXrbMtqlJpuzbG93Qg-ApT-CX_xP-CJ0SGBEosis6AshpluZ7aECgrBJGKeyjAUBKkrJi1SE68n4FQEiZVQPU3djWdLwL2Clh23mcg7Ed7nlYYtPhxn4kc97JBe_xq_JBORMUHr_Mpup8eoG9bbjDQjWNx9rZNqZI3JjFMsTHci3irVWB-8DnpjFhc4wONG-8OtmdQ_R8dzsbPySTp_vH8fUkEVmRhoQrkKkmZZ5TqXMyV6VOC5axSnKWqzITkgOAFqLgWqeCUlXQgqkir0pWEqazITrb5vbOvq3jv-uVXbsurqxTmpGIciBRXWyVcNZ7p3TdO9Nyt6kJ1F911rTe1Rnt5dZ6YcJ3Rz_43bpfWPdS_4f_Jn8C5SyEAg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2531781401</pqid></control><display><type>article</type><title>Dominant recombination path in low-bandgap kesterite CZTSe(S) solar cells from red light induced metastability</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Lyam, Mbafan S. ; Hölscher, Torsten ; Maiberg, Matthias ; Cabas-Vidani, Antonio ; Hernandez-Martinez, Alejandro ; Tampo, Hitoshi ; Scheer, Roland</creator><creatorcontrib>Lyam, Mbafan S. ; Hölscher, Torsten ; Maiberg, Matthias ; Cabas-Vidani, Antonio ; Hernandez-Martinez, Alejandro ; Tampo, Hitoshi ; Scheer, Roland</creatorcontrib><description>Hetero-junction kesterite Cu2ZnSn(S,Se)4 solar cells with low bandgap obtained from three different methods of fabrication were exposed to red light illumination, and the changes observed in their electronic properties due to this exposure were studied via open circuit voltage transients, admittance spectroscopy, capacitance voltage profiling techniques, and SCAPS simulation fits to experimental data. The results from the aforementioned techniques, in combination with temperature-dependent current voltage analysis, can be used to reveal the dominant Shockley–Read–Hall recombination path at open circuit voltage. We also derived analytical expressions for the activation energy of the saturation current density and the diode quality factor for the specific case of a solar cell device that has no type inversion at the absorber/buffer interface and is limited by interface recombination in the open circuit condition. It is found that the dominant recombination pathway for the low bandgap Cu2ZnSn(S,Se)4 solar cells under consideration is located in the space charge region and not at the absorber/buffer interface.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0045324</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Absorbers ; Buffers ; Copper zinc tin selenide ; Electrical impedance ; Electrical surges ; Electronic properties ; Energy gap ; Light ; Mathematical analysis ; Open circuit voltage ; Photovoltaic cells ; Q factors ; Solar cells ; Space charge ; Temperature dependence</subject><ispartof>Journal of applied physics, 2021-05, Vol.129 (20)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c362t-ae0d2f18445df41be8f267379da74e83cda000fcc6aff2c55e6567e64987817f3</citedby><cites>FETCH-LOGICAL-c362t-ae0d2f18445df41be8f267379da74e83cda000fcc6aff2c55e6567e64987817f3</cites><orcidid>0000-0002-2692-5859 ; 0000-0001-5007-3425 ; 0000-0002-0690-484X ; 0000-0002-8578-235X ; 0000-0002-0895-3864 ; 0000-0002-6666-0285</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/5.0045324$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Lyam, Mbafan S.</creatorcontrib><creatorcontrib>Hölscher, Torsten</creatorcontrib><creatorcontrib>Maiberg, Matthias</creatorcontrib><creatorcontrib>Cabas-Vidani, Antonio</creatorcontrib><creatorcontrib>Hernandez-Martinez, Alejandro</creatorcontrib><creatorcontrib>Tampo, Hitoshi</creatorcontrib><creatorcontrib>Scheer, Roland</creatorcontrib><title>Dominant recombination path in low-bandgap kesterite CZTSe(S) solar cells from red light induced metastability</title><title>Journal of applied physics</title><description>Hetero-junction kesterite Cu2ZnSn(S,Se)4 solar cells with low bandgap obtained from three different methods of fabrication were exposed to red light illumination, and the changes observed in their electronic properties due to this exposure were studied via open circuit voltage transients, admittance spectroscopy, capacitance voltage profiling techniques, and SCAPS simulation fits to experimental data. The results from the aforementioned techniques, in combination with temperature-dependent current voltage analysis, can be used to reveal the dominant Shockley–Read–Hall recombination path at open circuit voltage. We also derived analytical expressions for the activation energy of the saturation current density and the diode quality factor for the specific case of a solar cell device that has no type inversion at the absorber/buffer interface and is limited by interface recombination in the open circuit condition. It is found that the dominant recombination pathway for the low bandgap Cu2ZnSn(S,Se)4 solar cells under consideration is located in the space charge region and not at the absorber/buffer interface.</description><subject>Absorbers</subject><subject>Buffers</subject><subject>Copper zinc tin selenide</subject><subject>Electrical impedance</subject><subject>Electrical surges</subject><subject>Electronic properties</subject><subject>Energy gap</subject><subject>Light</subject><subject>Mathematical analysis</subject><subject>Open circuit voltage</subject><subject>Photovoltaic cells</subject><subject>Q factors</subject><subject>Solar cells</subject><subject>Space charge</subject><subject>Temperature dependence</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp90E1LwzAYB_AgCs7pwW8Q8KJC55O2adqjzFcYeNi8eClZXrbMtqlJpuzbG93Qg-ApT-CX_xP-CJ0SGBEosis6AshpluZ7aECgrBJGKeyjAUBKkrJi1SE68n4FQEiZVQPU3djWdLwL2Clh23mcg7Ed7nlYYtPhxn4kc97JBe_xq_JBORMUHr_Mpup8eoG9bbjDQjWNx9rZNqZI3JjFMsTHci3irVWB-8DnpjFhc4wONG-8OtmdQ_R8dzsbPySTp_vH8fUkEVmRhoQrkKkmZZ5TqXMyV6VOC5axSnKWqzITkgOAFqLgWqeCUlXQgqkir0pWEqazITrb5vbOvq3jv-uVXbsurqxTmpGIciBRXWyVcNZ7p3TdO9Nyt6kJ1F911rTe1Rnt5dZ6YcJ3Rz_43bpfWPdS_4f_Jn8C5SyEAg</recordid><startdate>20210528</startdate><enddate>20210528</enddate><creator>Lyam, Mbafan S.</creator><creator>Hölscher, Torsten</creator><creator>Maiberg, Matthias</creator><creator>Cabas-Vidani, Antonio</creator><creator>Hernandez-Martinez, Alejandro</creator><creator>Tampo, Hitoshi</creator><creator>Scheer, Roland</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2692-5859</orcidid><orcidid>https://orcid.org/0000-0001-5007-3425</orcidid><orcidid>https://orcid.org/0000-0002-0690-484X</orcidid><orcidid>https://orcid.org/0000-0002-8578-235X</orcidid><orcidid>https://orcid.org/0000-0002-0895-3864</orcidid><orcidid>https://orcid.org/0000-0002-6666-0285</orcidid></search><sort><creationdate>20210528</creationdate><title>Dominant recombination path in low-bandgap kesterite CZTSe(S) solar cells from red light induced metastability</title><author>Lyam, Mbafan S. ; Hölscher, Torsten ; Maiberg, Matthias ; Cabas-Vidani, Antonio ; Hernandez-Martinez, Alejandro ; Tampo, Hitoshi ; Scheer, Roland</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c362t-ae0d2f18445df41be8f267379da74e83cda000fcc6aff2c55e6567e64987817f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Absorbers</topic><topic>Buffers</topic><topic>Copper zinc tin selenide</topic><topic>Electrical impedance</topic><topic>Electrical surges</topic><topic>Electronic properties</topic><topic>Energy gap</topic><topic>Light</topic><topic>Mathematical analysis</topic><topic>Open circuit voltage</topic><topic>Photovoltaic cells</topic><topic>Q factors</topic><topic>Solar cells</topic><topic>Space charge</topic><topic>Temperature dependence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lyam, Mbafan S.</creatorcontrib><creatorcontrib>Hölscher, Torsten</creatorcontrib><creatorcontrib>Maiberg, Matthias</creatorcontrib><creatorcontrib>Cabas-Vidani, Antonio</creatorcontrib><creatorcontrib>Hernandez-Martinez, Alejandro</creatorcontrib><creatorcontrib>Tampo, Hitoshi</creatorcontrib><creatorcontrib>Scheer, Roland</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lyam, Mbafan S.</au><au>Hölscher, Torsten</au><au>Maiberg, Matthias</au><au>Cabas-Vidani, Antonio</au><au>Hernandez-Martinez, Alejandro</au><au>Tampo, Hitoshi</au><au>Scheer, Roland</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dominant recombination path in low-bandgap kesterite CZTSe(S) solar cells from red light induced metastability</atitle><jtitle>Journal of applied physics</jtitle><date>2021-05-28</date><risdate>2021</risdate><volume>129</volume><issue>20</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Hetero-junction kesterite Cu2ZnSn(S,Se)4 solar cells with low bandgap obtained from three different methods of fabrication were exposed to red light illumination, and the changes observed in their electronic properties due to this exposure were studied via open circuit voltage transients, admittance spectroscopy, capacitance voltage profiling techniques, and SCAPS simulation fits to experimental data. The results from the aforementioned techniques, in combination with temperature-dependent current voltage analysis, can be used to reveal the dominant Shockley–Read–Hall recombination path at open circuit voltage. We also derived analytical expressions for the activation energy of the saturation current density and the diode quality factor for the specific case of a solar cell device that has no type inversion at the absorber/buffer interface and is limited by interface recombination in the open circuit condition. It is found that the dominant recombination pathway for the low bandgap Cu2ZnSn(S,Se)4 solar cells under consideration is located in the space charge region and not at the absorber/buffer interface.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0045324</doi><tpages>20</tpages><orcidid>https://orcid.org/0000-0002-2692-5859</orcidid><orcidid>https://orcid.org/0000-0001-5007-3425</orcidid><orcidid>https://orcid.org/0000-0002-0690-484X</orcidid><orcidid>https://orcid.org/0000-0002-8578-235X</orcidid><orcidid>https://orcid.org/0000-0002-0895-3864</orcidid><orcidid>https://orcid.org/0000-0002-6666-0285</orcidid><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0021-8979 |
ispartof | Journal of applied physics, 2021-05, Vol.129 (20) |
issn | 0021-8979 1089-7550 |
language | eng |
recordid | cdi_scitation_primary_10_1063_5_0045324 |
source | AIP Journals Complete; Alma/SFX Local Collection |
subjects | Absorbers Buffers Copper zinc tin selenide Electrical impedance Electrical surges Electronic properties Energy gap Light Mathematical analysis Open circuit voltage Photovoltaic cells Q factors Solar cells Space charge Temperature dependence |
title | Dominant recombination path in low-bandgap kesterite CZTSe(S) solar cells from red light induced metastability |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T11%3A18%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dominant%20recombination%20path%20in%20low-bandgap%20kesterite%20CZTSe(S)%20solar%20cells%20from%20red%20light%20induced%20metastability&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Lyam,%20Mbafan%20S.&rft.date=2021-05-28&rft.volume=129&rft.issue=20&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/5.0045324&rft_dat=%3Cproquest_scita%3E2531781401%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2531781401&rft_id=info:pmid/&rfr_iscdi=true |