Combinatorial synthesis of non-stoichiometric SiOx thin films via high-throughput reactive sputtering

Oxygen vacancy defects have been widely studied for fundamental research and industrial applications, because they significantly influence the physical properties of oxides. Precise and systematic control over oxygen deficiency is a prerequisite for qualitative and quantitative studies on the effect...

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Veröffentlicht in:Journal of applied physics 2021-04, Vol.129 (15)
Hauptverfasser: Park, Jihun, Shin, Sang Ho, Bae, Jong-Seong, Zhang, Xiaohang, Takeuchi, Ichiro, Lee, Seunghun
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Sprache:eng
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