Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness
Thermal conductivity of AlxGa1−xN layers with 0 ≤ x ≤ 0.96 and variable thicknesses is systematically studied by combined thermoreflectance measurements and a modified Callaway model. We find a reduction in the thermal conductivity of AlxGa1−xN by more than one order of magnitude compared to that of...
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creator | Tran, Dat Q. Delgado-Carrascon, Rosalia Muth, John F. Paskova, Tania Nawaz, Muhammad Darakchieva, Vanya Paskov, Plamen P. |
description | Thermal conductivity of AlxGa1−xN layers with
0
≤
x
≤
0.96 and variable thicknesses is systematically studied by combined thermoreflectance measurements and a modified Callaway model. We find a reduction in the thermal conductivity of AlxGa1−xN by more than one order of magnitude compared to that of GaN, which indicates a strong effect of phonon-alloy scattering. It is shown that the short-mean free path phonons are strongly scattered, which leads to a major contribution of the long-mean free path phonons to the thermal conductivity. In thin layers, the long-mean free path phonons become efficiently scattered by the boundaries, resulting in a further decrease in the thermal conductivity. Also, an asymmetry of thermal conductivity as a function of Al content is experimentally observed and attributed to the mass difference between Ga and Al host atoms. |
doi_str_mv | 10.1063/5.0031404 |
format | Article |
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0
≤
x
≤
0.96 and variable thicknesses is systematically studied by combined thermoreflectance measurements and a modified Callaway model. We find a reduction in the thermal conductivity of AlxGa1−xN by more than one order of magnitude compared to that of GaN, which indicates a strong effect of phonon-alloy scattering. It is shown that the short-mean free path phonons are strongly scattered, which leads to a major contribution of the long-mean free path phonons to the thermal conductivity. In thin layers, the long-mean free path phonons become efficiently scattered by the boundaries, resulting in a further decrease in the thermal conductivity. Also, an asymmetry of thermal conductivity as a function of Al content is experimentally observed and attributed to the mass difference between Ga and Al host atoms.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0031404</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum ; Applied physics ; Atomic properties ; Heat conductivity ; Heat transfer ; Mean free path ; Phonons ; Scattering ; Thermal conductivity ; Thickness ; Thin films</subject><ispartof>Applied physics letters, 2020-12, Vol.117 (25)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-0011-6161 ; 0000-0003-2602-1523 ; 0000-0001-5824-6378 ; 0000-0002-8112-7411 ; 0000-0001-8706-9585</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0031404$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4512,27924,27925,76384</link.rule.ids></links><search><creatorcontrib>Tran, Dat Q.</creatorcontrib><creatorcontrib>Delgado-Carrascon, Rosalia</creatorcontrib><creatorcontrib>Muth, John F.</creatorcontrib><creatorcontrib>Paskova, Tania</creatorcontrib><creatorcontrib>Nawaz, Muhammad</creatorcontrib><creatorcontrib>Darakchieva, Vanya</creatorcontrib><creatorcontrib>Paskov, Plamen P.</creatorcontrib><title>Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness</title><title>Applied physics letters</title><description>Thermal conductivity of AlxGa1−xN layers with
0
≤
x
≤
0.96 and variable thicknesses is systematically studied by combined thermoreflectance measurements and a modified Callaway model. We find a reduction in the thermal conductivity of AlxGa1−xN by more than one order of magnitude compared to that of GaN, which indicates a strong effect of phonon-alloy scattering. It is shown that the short-mean free path phonons are strongly scattered, which leads to a major contribution of the long-mean free path phonons to the thermal conductivity. In thin layers, the long-mean free path phonons become efficiently scattered by the boundaries, resulting in a further decrease in the thermal conductivity. Also, an asymmetry of thermal conductivity as a function of Al content is experimentally observed and attributed to the mass difference between Ga and Al host atoms.</description><subject>Aluminum</subject><subject>Applied physics</subject><subject>Atomic properties</subject><subject>Heat conductivity</subject><subject>Heat transfer</subject><subject>Mean free path</subject><subject>Phonons</subject><subject>Scattering</subject><subject>Thermal conductivity</subject><subject>Thickness</subject><subject>Thin films</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNotkE1OwzAQhS0EEqWw4AaW2CGl2HH8E3ZVVQpSBSxgw8ZyEg9NSe1gu1J7A9YckZMQRFdP8_RmRu9D6JKSCSWC3fAJIYwWpDhCI0qkzBil6hiNyGBnouT0FJ3FuB5GnjM2Qm_PK--8yyq_dY0Jexxrk5INrXvHxjU4rWzYmA6nYFzsfUi4dXja7RaG_nx97x5v8RzA1gl7wJ3Z2zBstPWHszGeoxMwXbQXBx2j17v5y-w-Wz4tHmbTZdZTxVKW81pVkgGURWUkqLq2IClYYRRYBrJhiisCwlaMMtEYMKXIIS9KCVY2DWdjdPV_tw_-c2tj0mu_DW54qfNCUi44F3JIXf-nYt0mk1rvdB_azVBZU6L_2GmuD-zYL8BwYqk</recordid><startdate>20201221</startdate><enddate>20201221</enddate><creator>Tran, Dat Q.</creator><creator>Delgado-Carrascon, Rosalia</creator><creator>Muth, John F.</creator><creator>Paskova, Tania</creator><creator>Nawaz, Muhammad</creator><creator>Darakchieva, Vanya</creator><creator>Paskov, Plamen P.</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-0011-6161</orcidid><orcidid>https://orcid.org/0000-0003-2602-1523</orcidid><orcidid>https://orcid.org/0000-0001-5824-6378</orcidid><orcidid>https://orcid.org/0000-0002-8112-7411</orcidid><orcidid>https://orcid.org/0000-0001-8706-9585</orcidid></search><sort><creationdate>20201221</creationdate><title>Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness</title><author>Tran, Dat Q. ; Delgado-Carrascon, Rosalia ; Muth, John F. ; Paskova, Tania ; Nawaz, Muhammad ; Darakchieva, Vanya ; Paskov, Plamen P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p183t-25c8b73ff94ba7f8ccef71fe6a8fe3f7d38580f6eb3136dafa962f2497fe7dd53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Aluminum</topic><topic>Applied physics</topic><topic>Atomic properties</topic><topic>Heat conductivity</topic><topic>Heat transfer</topic><topic>Mean free path</topic><topic>Phonons</topic><topic>Scattering</topic><topic>Thermal conductivity</topic><topic>Thickness</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tran, Dat Q.</creatorcontrib><creatorcontrib>Delgado-Carrascon, Rosalia</creatorcontrib><creatorcontrib>Muth, John F.</creatorcontrib><creatorcontrib>Paskova, Tania</creatorcontrib><creatorcontrib>Nawaz, Muhammad</creatorcontrib><creatorcontrib>Darakchieva, Vanya</creatorcontrib><creatorcontrib>Paskov, Plamen P.</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tran, Dat Q.</au><au>Delgado-Carrascon, Rosalia</au><au>Muth, John F.</au><au>Paskova, Tania</au><au>Nawaz, Muhammad</au><au>Darakchieva, Vanya</au><au>Paskov, Plamen P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness</atitle><jtitle>Applied physics letters</jtitle><date>2020-12-21</date><risdate>2020</risdate><volume>117</volume><issue>25</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Thermal conductivity of AlxGa1−xN layers with
0
≤
x
≤
0.96 and variable thicknesses is systematically studied by combined thermoreflectance measurements and a modified Callaway model. We find a reduction in the thermal conductivity of AlxGa1−xN by more than one order of magnitude compared to that of GaN, which indicates a strong effect of phonon-alloy scattering. It is shown that the short-mean free path phonons are strongly scattered, which leads to a major contribution of the long-mean free path phonons to the thermal conductivity. In thin layers, the long-mean free path phonons become efficiently scattered by the boundaries, resulting in a further decrease in the thermal conductivity. Also, an asymmetry of thermal conductivity as a function of Al content is experimentally observed and attributed to the mass difference between Ga and Al host atoms.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0031404</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-0011-6161</orcidid><orcidid>https://orcid.org/0000-0003-2602-1523</orcidid><orcidid>https://orcid.org/0000-0001-5824-6378</orcidid><orcidid>https://orcid.org/0000-0002-8112-7411</orcidid><orcidid>https://orcid.org/0000-0001-8706-9585</orcidid><oa>free_for_read</oa></addata></record> |
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source | AIP Journals Complete; Alma/SFX Local Collection |
subjects | Aluminum Applied physics Atomic properties Heat conductivity Heat transfer Mean free path Phonons Scattering Thermal conductivity Thickness Thin films |
title | Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness |
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