Interface characterization of Al2O3/m-plane GaN structure

The interface properties of Al2O3/GaN structures fabricated on the homo-epitaxial m-plane GaN were investigated. An atomically flat surface with a root mean square roughness of 0.15 nm was observed for the m-plane GaN layer on a substrate inclined 5° toward the [000-1] direction. Even for the as-pre...

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Veröffentlicht in:	AIP advances 2021-01, Vol.11 (1), p.015301-015301-7
Hauptverfasser:	Kaneki, Shota, Hashizume, Tamotsu
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Current voltage characteristics Dimers Dispersion Flat surfaces Gallium nitrides Interfacial properties Leakage current Metallizing Substrates
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