Enhanced sensing performance of zinc oxide porous silicon heterojunction-based gas sensors
The structural properties of ZnO and ZnO:Al(2, 4, 6 and 8)%. Nanostructurethin films deposited at 450°C on porous silicon (PS) substrates of p-type and n-type of porous were studied in this work. Thin films preparedvia chemical spray Pyrolysis (CSP)havethickness (150±5 nm). The undoped ZnO and ZnO:A...
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| creator | Hussain, Randa Kamel Al-Fouadi, Anwar Hussein Ali Khuodhair, Muntadhair Jawad |
| description | The structural properties of ZnO and ZnO:Al(2, 4, 6 and 8)%. Nanostructurethin films deposited at 450°C on porous silicon (PS) substrates of p-type and n-type of porous were studied in this work. Thin films preparedvia chemical spray Pyrolysis (CSP)havethickness (150±5 nm). The undoped ZnO and ZnO:Alnanostructure showed the hexagonal wurtzite structure. The structural specifics and microstructure areinvestigatedby X-ray diffraction shows that the excess Aluminum ratio gives raise the crystallite size and lattice constants to be decreasing. Thin films surface morphology drawn from TEM, SEM and AFM analysis exhibit spherical nanoparticles aligned together into a line, and it converted their shape as doping Aluminum used. The thin films sensitivity towards the ethanol and hydrogen gases showed an enhancement proportional to the Al doping ratio, and n-PS substrate has higher sensitivity. |
| doi_str_mv | 10.1063/5.0031061 |
| format | Conference Proceeding |
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Nanostructurethin films deposited at 450°C on porous silicon (PS) substrates of p-type and n-type of porous were studied in this work. Thin films preparedvia chemical spray Pyrolysis (CSP)havethickness (150±5 nm). The undoped ZnO and ZnO:Alnanostructure showed the hexagonal wurtzite structure. The structural specifics and microstructure areinvestigatedby X-ray diffraction shows that the excess Aluminum ratio gives raise the crystallite size and lattice constants to be decreasing. Thin films surface morphology drawn from TEM, SEM and AFM analysis exhibit spherical nanoparticles aligned together into a line, and it converted their shape as doping Aluminum used. The thin films sensitivity towards the ethanol and hydrogen gases showed an enhancement proportional to the Al doping ratio, and n-PS substrate has higher sensitivity.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/5.0031061</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum ; Crystallites ; Doping ; Ethanol ; Gas sensors ; Heterojunctions ; Lattice parameters ; Nanoparticles ; Porous silicon ; Sensitivity ; Silicon ; Silicon substrates ; Spray pyrolysis ; Thin films ; Wurtzite ; Zinc oxide ; Zinc oxides</subject><ispartof>AIP conference proceedings, 2020, Vol.2292 (1)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). 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The thin films sensitivity towards the ethanol and hydrogen gases showed an enhancement proportional to the Al doping ratio, and n-PS substrate has higher sensitivity.</description><subject>Aluminum</subject><subject>Crystallites</subject><subject>Doping</subject><subject>Ethanol</subject><subject>Gas sensors</subject><subject>Heterojunctions</subject><subject>Lattice parameters</subject><subject>Nanoparticles</subject><subject>Porous silicon</subject><subject>Sensitivity</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>Spray pyrolysis</subject><subject>Thin films</subject><subject>Wurtzite</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2020</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp9kE1LAzEQhoMoWKsH_0HAm7A1s_nqHqXUDyh46UG8hGw2aVPaZE12Rf31bm3Bm6cZhmeeGV6EroFMgAh6xyeE0KGDEzQCzqGQAsQpGhFSsaJk9PUcXeS8IaSspJyO0Ns8rHUwtsHZhuzDCrc2uZh2-yGODn_7YHD89I3FbUyxzzj7rTcx4LXtbIqbPpjOx1DUOg-Wlc6_ppjyJTpzepvt1bGO0fJhvpw9FYuXx-fZ_aJoQUy7wjBpAUhNYOpqKoQ2QJgQrmqAadBQ20pqKmrgRENDK2t5IysBDBxwyekY3Ry0bYrvvc2d2sQ-heGiKhlnrKK8JAN1e6Cy8Z3eP6za5Hc6famPmBRXx9hU27j_YCBqn_PfAv0BaiJvog</recordid><startdate>20201027</startdate><enddate>20201027</enddate><creator>Hussain, Randa Kamel</creator><creator>Al-Fouadi, Anwar Hussein Ali</creator><creator>Khuodhair, Muntadhair Jawad</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20201027</creationdate><title>Enhanced sensing performance of zinc oxide porous silicon heterojunction-based gas sensors</title><author>Hussain, Randa Kamel ; Al-Fouadi, Anwar Hussein Ali ; Khuodhair, Muntadhair Jawad</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p168t-c47e110b018fb366ac10466f9d14a1a1be97a36b150a1d39ee5d796141f15753</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Aluminum</topic><topic>Crystallites</topic><topic>Doping</topic><topic>Ethanol</topic><topic>Gas sensors</topic><topic>Heterojunctions</topic><topic>Lattice parameters</topic><topic>Nanoparticles</topic><topic>Porous silicon</topic><topic>Sensitivity</topic><topic>Silicon</topic><topic>Silicon substrates</topic><topic>Spray pyrolysis</topic><topic>Thin films</topic><topic>Wurtzite</topic><topic>Zinc oxide</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hussain, Randa Kamel</creatorcontrib><creatorcontrib>Al-Fouadi, Anwar Hussein Ali</creatorcontrib><creatorcontrib>Khuodhair, Muntadhair Jawad</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hussain, Randa Kamel</au><au>Al-Fouadi, Anwar Hussein Ali</au><au>Khuodhair, Muntadhair Jawad</au><au>Onn, Chow Chee</au><au>Ramu, Arulmurugan</au><au>Haldorai, Anandakumar</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Enhanced sensing performance of zinc oxide porous silicon heterojunction-based gas sensors</atitle><btitle>AIP conference proceedings</btitle><date>2020-10-27</date><risdate>2020</risdate><volume>2292</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>The structural properties of ZnO and ZnO:Al(2, 4, 6 and 8)%. Nanostructurethin films deposited at 450°C on porous silicon (PS) substrates of p-type and n-type of porous were studied in this work. Thin films preparedvia chemical spray Pyrolysis (CSP)havethickness (150±5 nm). The undoped ZnO and ZnO:Alnanostructure showed the hexagonal wurtzite structure. The structural specifics and microstructure areinvestigatedby X-ray diffraction shows that the excess Aluminum ratio gives raise the crystallite size and lattice constants to be decreasing. Thin films surface morphology drawn from TEM, SEM and AFM analysis exhibit spherical nanoparticles aligned together into a line, and it converted their shape as doping Aluminum used. The thin films sensitivity towards the ethanol and hydrogen gases showed an enhancement proportional to the Al doping ratio, and n-PS substrate has higher sensitivity.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0031061</doi><tpages>10</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2020, Vol.2292 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_5_0031061 |
| source | AIP Journals Complete |
| subjects | Aluminum Crystallites Doping Ethanol Gas sensors Heterojunctions Lattice parameters Nanoparticles Porous silicon Sensitivity Silicon Silicon substrates Spray pyrolysis Thin films Wurtzite Zinc oxide Zinc oxides |
| title | Enhanced sensing performance of zinc oxide porous silicon heterojunction-based gas sensors |
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