Reliability aspects of ferroelectric TiN/Hf0.5Zr0.5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition

The reliability of Hf0.5Zr0.5O2 (HZO) metal–ferroelectric–semiconductor capacitors grown by plasma-assisted atomic oxygen deposition on Ge substrates is investigated with an emphasis on the influence of crystallization annealing. The capacitors show very weak wake-up and imprint effects, allowing re...

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Veröffentlicht in:	Applied physics letters 2020-11, Vol.117 (21)
Hauptverfasser:	Zacharaki, C., Tsipas, P., Chaitoglou, S., Bégon-Lours, L., Halter, M., Dimoulas, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied physics Atomic oxygen Capacitors Carrier injection Coercivity Crystal defects Crystallization Defect annealing Deposition Ferroelectric materials Ferroelectricity Flash annealing Germanium Leakage current Reliability aspects Substrates Temperature dependence
Online-Zugang:	Volltext
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