Enhanced electrical properties of Nb-doped a-HfO2 dielectric films for MIM capacitors

We report enhanced electrical properties of metal–insulator–metal (MIM) capacitors consisting of Al (100 nm)/Nb-doped a-HfO2 (∼30 nm)/Pt (100 nm) on a p-type silicon wafer, where Nb-doped amorphous HfO2 (a-HfO2) layers were deposited by radio frequency magnetron sputtering in various low oxygen part...

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Veröffentlicht in:	AIP advances 2020-11, Vol.10 (11), p.115117-115117-6
Hauptverfasser:	Bon, Chris Yeajoon, Kim, Dami, Lee, Kanghyuk, Choi, Sungjoon, Park, Insung, Yoo, Sang-Im
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Capacitors Dielectric properties Electrical properties Hafnium oxide Leakage current Magnetron sputtering Niobium Room temperature Silicon wafers Thin films X ray photoelectron spectroscopy
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