Controlled giant magnetoresistance and spin–valley transport in an asymmetrical MoS2 tunnel junction

We study the effects of asymmetrical magnetization and an optoelectronic tunable band structure on the transmission of particles in a MoS2 tunnel junction. Based on the results, we propose a model for a multifunctional coupler as a single system incorporating giant magnetoresistance, a spin–valley f...

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Veröffentlicht in:Applied physics letters 2020-09, Vol.117 (10)
Hauptverfasser: Qiu, Xue-Jun, Cao, Zhen-Zhou, Hou, Jin, Yang, Chun-Yong
Format: Artikel
Sprache:eng
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Zusammenfassung:We study the effects of asymmetrical magnetization and an optoelectronic tunable band structure on the transmission of particles in a MoS2 tunnel junction. Based on the results, we propose a model for a multifunctional coupler as a single system incorporating giant magnetoresistance, a spin–valley filter, and a spin–valley valve. The device is made up of ferromagnetic/ferromagnetic/normal junctions, with an off-resonant light and an electric gate potential functioning as the spin–valley filter and spin–valley valve, respectively. Increasing the asymmetrical magnetization is found to substantially enhance the tunneling magnetoresistance (TMR) of the system, leading to giant TMR. The spin–valley filtering is based on the spin imbalance modulation that arises from asymmetrical magnetization and the valley degeneracy breaking of off-resonant light, and the spin–valley valve is produced by altering the effective density of states of spin/valley polarized bands via the gate potential that controls the flow of spin/valley polarized particles. By fixing the magnetization configurations, one specific spin–valley filter and spin–valley valve can be acquired by tuning an external parameter to the corresponding spin/valley polarized energy windows.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0018869