Impact of electron injection on carrier transport and recombination in unintentionally doped GaN
The impact of electron injection on minority carrier (hole) diffusion length and lifetime at variable temperatures was studied using electron beam-induced current, continuous, and time-resolved cathodoluminescence techniques. The hole diffusion length increased from 306 nm to 347 nm with an electron...
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| Veröffentlicht in: | Journal of applied physics 2020-08, Vol.128 (8) |
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| container_title | Journal of applied physics |
| container_volume | 128 |
| creator | Modak, Sushrut Chernyak, Leonid Xian, Minghan Ren, Fan Pearton, Stephen J. Khodorov, Sergey Lubomirsky, Igor Ruzin, Arie Dashevsky, Zinovi |
| description | The impact of electron injection on minority carrier (hole) diffusion length and lifetime at variable temperatures was studied using electron beam-induced current, continuous, and time-resolved cathodoluminescence techniques. The hole diffusion length increased from 306 nm to 347 nm with an electron injection charge density up to 117.5 nC/μm3, corresponding to the lifetime changing from 77 ps to 101 ps. Elongation of the diffusion length was attributed to the increase in the non-equilibrium carrier lifetime, which was determined using ultrafast time-resolved cathodoluminescence and related to non-equilibrium carrier trapping on gallium vacancy levels in the GaN forbidden gap. |
| doi_str_mv | 10.1063/5.0017742 |
| format | Article |
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The hole diffusion length increased from 306 nm to 347 nm with an electron injection charge density up to 117.5 nC/μm3, corresponding to the lifetime changing from 77 ps to 101 ps. Elongation of the diffusion length was attributed to the increase in the non-equilibrium carrier lifetime, which was determined using ultrafast time-resolved cathodoluminescence and related to non-equilibrium carrier trapping on gallium vacancy levels in the GaN forbidden gap.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0017742</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Carrier lifetime ; Carrier recombination ; Carrier transport ; Cathodoluminescence ; Charge density ; Charge injection ; Diffusion ; Diffusion length ; Electron beam induced current ; Elongation ; Gallium ; Minority carriers</subject><ispartof>Journal of applied physics, 2020-08, Vol.128 (8)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). 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The hole diffusion length increased from 306 nm to 347 nm with an electron injection charge density up to 117.5 nC/μm3, corresponding to the lifetime changing from 77 ps to 101 ps. 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| ispartof | Journal of applied physics, 2020-08, Vol.128 (8) |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Carrier lifetime Carrier recombination Carrier transport Cathodoluminescence Charge density Charge injection Diffusion Diffusion length Electron beam induced current Elongation Gallium Minority carriers |
| title | Impact of electron injection on carrier transport and recombination in unintentionally doped GaN |
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