Resistive switching in Al2O3 based trilayer structure with varying parameters via experimentation and computation

Resistive switching characteristics in Al (40 nm)/Al2O3 (x nm)/Ni (50 nm) were analyzed while the middle layer thickness is varied from 5 nm to 20 nm with an increment of 5 nm each. Al/Al2O3/Ni with a total thickness of 100 nm showed the most prominent results. The current compliance was 100 mA whil...

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Veröffentlicht in:	AIP advances 2020-11, Vol.10 (11), p.115218-115218-6
Hauptverfasser:	Fatheema, Jameela, Fatima, Sabeen, Ali, Bilal Jehanzaib, Mohammad, Mohammad Ali, Shahid, Tauseef, Islam, Amjad, Rizwan, Syed
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Aluminum oxide Conduction Data storage Density functional theory Experimentation Nickel Oxygen Random access memory Switching Thickness Vacancies Valence band
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