Resistive switching in Al2O3 based trilayer structure with varying parameters via experimentation and computation

Resistive switching characteristics in Al (40 nm)/Al2O3 (x nm)/Ni (50 nm) were analyzed while the middle layer thickness is varied from 5 nm to 20 nm with an increment of 5 nm each. Al/Al2O3/Ni with a total thickness of 100 nm showed the most prominent results. The current compliance was 100 mA whil...

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Veröffentlicht in:AIP advances 2020-11, Vol.10 (11), p.115218-115218-6
Hauptverfasser: Fatheema, Jameela, Fatima, Sabeen, Ali, Bilal Jehanzaib, Mohammad, Mohammad Ali, Shahid, Tauseef, Islam, Amjad, Rizwan, Syed
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container_issue 11
container_start_page 115218
container_title AIP advances
container_volume 10
creator Fatheema, Jameela
Fatima, Sabeen
Ali, Bilal Jehanzaib
Mohammad, Mohammad Ali
Shahid, Tauseef
Islam, Amjad
Rizwan, Syed
description Resistive switching characteristics in Al (40 nm)/Al2O3 (x nm)/Ni (50 nm) were analyzed while the middle layer thickness is varied from 5 nm to 20 nm with an increment of 5 nm each. Al/Al2O3/Ni with a total thickness of 100 nm showed the most prominent results. The current compliance was 100 mA while the voltage range for each design varied in the range of ±4 V, showing bipolar resistive switching. The double logarithmic curves indicated the presence of the Ohmic conduction and space-charge limited current mechanism. Moreover, density functional theory based calculations were performed for aluminum oxide with induced oxygen vacancy defects. The structures with oxygen vacancies showed that the nature of aluminum oxide was converted to semi-conducting from insulating, i.e., the bandgap was decreased from ∼6 eV to ∼0.6 eV. Density of states displayed that the atoms neighboring the oxygen vacant sites are responsible for a shift in states toward the valence band and Fermi level. Formation of a conduction filament (CF) is found essential for conduction in resistive random access memory (RRAM), and the computational analysis clarified that induction of oxygen vacancies is vital for the formation of CF. Finally, this work presents a detailed discussion and understanding of resistive switching in aluminum oxide-based RRAM, which is significant in the advancement of non-volatile data storage application.
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fullrecord <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_5_0016027</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_35cfad0e90bd4941a8ff429e52ec7082</doaj_id><sourcerecordid>2462247685</sourcerecordid><originalsourceid>FETCH-LOGICAL-c358t-9b0b9eaf5580ab438ec5a5d756c6027bd54af3242b1229f8ba73b72f82d8e2b93</originalsourceid><addsrcrecordid>eNp9kU9r3DAQxU1poSHNod9A0FMLm8ojyZaPIfRPIBAo7VmMpFGiZddyJHnbfPt465AWCp2LRuLH05t5TfO25ect78RHdc5523HoXzQn0Cq9EQDdy7_6181ZKVu-lBxaruVJc_-NSiw1HoiVn7G6uzjesjiyix3cCGaxkGc1xx0-UGal5tnVORNb0Dt2wPxwxCfMuKdKubBDREa_JspxT2PFGtPIcPTMpf00r_c3zauAu0JnT-dp8-Pzp--XXzfXN1-uLi-uN04oXTeD5XYgDEppjlYKTU6h8r3q3HFC65XEIECCbQGGoC32wvYQNHhNYAdx2lytuj7h1kyLo8WuSRjN74eUbw3mGt2OjFAuoOc0cOvlIFvUIUgYSAG5nmtYtN6tWlNO9zOVarZpzuNi34DsAGTfabVQ71fK5VRKpvD8a8vNMSCjzFNAC_thZYuL616e4UPKf0Az-fA_-F_lRzWWn-Q</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2462247685</pqid></control><display><type>article</type><title>Resistive switching in Al2O3 based trilayer structure with varying parameters via experimentation and computation</title><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>Alma/SFX Local Collection</source><source>Free Full-Text Journals in Chemistry</source><creator>Fatheema, Jameela ; Fatima, Sabeen ; Ali, Bilal Jehanzaib ; Mohammad, Mohammad Ali ; Shahid, Tauseef ; Islam, Amjad ; Rizwan, Syed</creator><creatorcontrib>Fatheema, Jameela ; Fatima, Sabeen ; Ali, Bilal Jehanzaib ; Mohammad, Mohammad Ali ; Shahid, Tauseef ; Islam, Amjad ; Rizwan, Syed</creatorcontrib><description>Resistive switching characteristics in Al (40 nm)/Al2O3 (x nm)/Ni (50 nm) were analyzed while the middle layer thickness is varied from 5 nm to 20 nm with an increment of 5 nm each. Al/Al2O3/Ni with a total thickness of 100 nm showed the most prominent results. The current compliance was 100 mA while the voltage range for each design varied in the range of ±4 V, showing bipolar resistive switching. The double logarithmic curves indicated the presence of the Ohmic conduction and space-charge limited current mechanism. Moreover, density functional theory based calculations were performed for aluminum oxide with induced oxygen vacancy defects. The structures with oxygen vacancies showed that the nature of aluminum oxide was converted to semi-conducting from insulating, i.e., the bandgap was decreased from ∼6 eV to ∼0.6 eV. Density of states displayed that the atoms neighboring the oxygen vacant sites are responsible for a shift in states toward the valence band and Fermi level. Formation of a conduction filament (CF) is found essential for conduction in resistive random access memory (RRAM), and the computational analysis clarified that induction of oxygen vacancies is vital for the formation of CF. Finally, this work presents a detailed discussion and understanding of resistive switching in aluminum oxide-based RRAM, which is significant in the advancement of non-volatile data storage application.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/5.0016027</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum ; Aluminum oxide ; Conduction ; Data storage ; Density functional theory ; Experimentation ; Nickel ; Oxygen ; Random access memory ; Switching ; Thickness ; Vacancies ; Valence band</subject><ispartof>AIP advances, 2020-11, Vol.10 (11), p.115218-115218-6</ispartof><rights>Author(s)</rights><rights>2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-9b0b9eaf5580ab438ec5a5d756c6027bd54af3242b1229f8ba73b72f82d8e2b93</citedby><cites>FETCH-LOGICAL-c358t-9b0b9eaf5580ab438ec5a5d756c6027bd54af3242b1229f8ba73b72f82d8e2b93</cites><orcidid>0000-0001-5502-1114 ; 0000-0002-6934-0949 ; 0000-0001-5705-3611</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,862,2098,27911,27912</link.rule.ids></links><search><creatorcontrib>Fatheema, Jameela</creatorcontrib><creatorcontrib>Fatima, Sabeen</creatorcontrib><creatorcontrib>Ali, Bilal Jehanzaib</creatorcontrib><creatorcontrib>Mohammad, Mohammad Ali</creatorcontrib><creatorcontrib>Shahid, Tauseef</creatorcontrib><creatorcontrib>Islam, Amjad</creatorcontrib><creatorcontrib>Rizwan, Syed</creatorcontrib><title>Resistive switching in Al2O3 based trilayer structure with varying parameters via experimentation and computation</title><title>AIP advances</title><description>Resistive switching characteristics in Al (40 nm)/Al2O3 (x nm)/Ni (50 nm) were analyzed while the middle layer thickness is varied from 5 nm to 20 nm with an increment of 5 nm each. Al/Al2O3/Ni with a total thickness of 100 nm showed the most prominent results. The current compliance was 100 mA while the voltage range for each design varied in the range of ±4 V, showing bipolar resistive switching. The double logarithmic curves indicated the presence of the Ohmic conduction and space-charge limited current mechanism. Moreover, density functional theory based calculations were performed for aluminum oxide with induced oxygen vacancy defects. The structures with oxygen vacancies showed that the nature of aluminum oxide was converted to semi-conducting from insulating, i.e., the bandgap was decreased from ∼6 eV to ∼0.6 eV. Density of states displayed that the atoms neighboring the oxygen vacant sites are responsible for a shift in states toward the valence band and Fermi level. Formation of a conduction filament (CF) is found essential for conduction in resistive random access memory (RRAM), and the computational analysis clarified that induction of oxygen vacancies is vital for the formation of CF. Finally, this work presents a detailed discussion and understanding of resistive switching in aluminum oxide-based RRAM, which is significant in the advancement of non-volatile data storage application.</description><subject>Aluminum</subject><subject>Aluminum oxide</subject><subject>Conduction</subject><subject>Data storage</subject><subject>Density functional theory</subject><subject>Experimentation</subject><subject>Nickel</subject><subject>Oxygen</subject><subject>Random access memory</subject><subject>Switching</subject><subject>Thickness</subject><subject>Vacancies</subject><subject>Valence band</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kU9r3DAQxU1poSHNod9A0FMLm8ojyZaPIfRPIBAo7VmMpFGiZddyJHnbfPt465AWCp2LRuLH05t5TfO25ect78RHdc5523HoXzQn0Cq9EQDdy7_6181ZKVu-lBxaruVJc_-NSiw1HoiVn7G6uzjesjiyix3cCGaxkGc1xx0-UGal5tnVORNb0Dt2wPxwxCfMuKdKubBDREa_JspxT2PFGtPIcPTMpf00r_c3zauAu0JnT-dp8-Pzp--XXzfXN1-uLi-uN04oXTeD5XYgDEppjlYKTU6h8r3q3HFC65XEIECCbQGGoC32wvYQNHhNYAdx2lytuj7h1kyLo8WuSRjN74eUbw3mGt2OjFAuoOc0cOvlIFvUIUgYSAG5nmtYtN6tWlNO9zOVarZpzuNi34DsAGTfabVQ71fK5VRKpvD8a8vNMSCjzFNAC_thZYuL616e4UPKf0Az-fA_-F_lRzWWn-Q</recordid><startdate>20201101</startdate><enddate>20201101</enddate><creator>Fatheema, Jameela</creator><creator>Fatima, Sabeen</creator><creator>Ali, Bilal Jehanzaib</creator><creator>Mohammad, Mohammad Ali</creator><creator>Shahid, Tauseef</creator><creator>Islam, Amjad</creator><creator>Rizwan, Syed</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0001-5502-1114</orcidid><orcidid>https://orcid.org/0000-0002-6934-0949</orcidid><orcidid>https://orcid.org/0000-0001-5705-3611</orcidid></search><sort><creationdate>20201101</creationdate><title>Resistive switching in Al2O3 based trilayer structure with varying parameters via experimentation and computation</title><author>Fatheema, Jameela ; Fatima, Sabeen ; Ali, Bilal Jehanzaib ; Mohammad, Mohammad Ali ; Shahid, Tauseef ; Islam, Amjad ; Rizwan, Syed</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-9b0b9eaf5580ab438ec5a5d756c6027bd54af3242b1229f8ba73b72f82d8e2b93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Aluminum</topic><topic>Aluminum oxide</topic><topic>Conduction</topic><topic>Data storage</topic><topic>Density functional theory</topic><topic>Experimentation</topic><topic>Nickel</topic><topic>Oxygen</topic><topic>Random access memory</topic><topic>Switching</topic><topic>Thickness</topic><topic>Vacancies</topic><topic>Valence band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fatheema, Jameela</creatorcontrib><creatorcontrib>Fatima, Sabeen</creatorcontrib><creatorcontrib>Ali, Bilal Jehanzaib</creatorcontrib><creatorcontrib>Mohammad, Mohammad Ali</creatorcontrib><creatorcontrib>Shahid, Tauseef</creatorcontrib><creatorcontrib>Islam, Amjad</creatorcontrib><creatorcontrib>Rizwan, Syed</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fatheema, Jameela</au><au>Fatima, Sabeen</au><au>Ali, Bilal Jehanzaib</au><au>Mohammad, Mohammad Ali</au><au>Shahid, Tauseef</au><au>Islam, Amjad</au><au>Rizwan, Syed</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Resistive switching in Al2O3 based trilayer structure with varying parameters via experimentation and computation</atitle><jtitle>AIP advances</jtitle><date>2020-11-01</date><risdate>2020</risdate><volume>10</volume><issue>11</issue><spage>115218</spage><epage>115218-6</epage><pages>115218-115218-6</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>Resistive switching characteristics in Al (40 nm)/Al2O3 (x nm)/Ni (50 nm) were analyzed while the middle layer thickness is varied from 5 nm to 20 nm with an increment of 5 nm each. Al/Al2O3/Ni with a total thickness of 100 nm showed the most prominent results. The current compliance was 100 mA while the voltage range for each design varied in the range of ±4 V, showing bipolar resistive switching. The double logarithmic curves indicated the presence of the Ohmic conduction and space-charge limited current mechanism. Moreover, density functional theory based calculations were performed for aluminum oxide with induced oxygen vacancy defects. The structures with oxygen vacancies showed that the nature of aluminum oxide was converted to semi-conducting from insulating, i.e., the bandgap was decreased from ∼6 eV to ∼0.6 eV. Density of states displayed that the atoms neighboring the oxygen vacant sites are responsible for a shift in states toward the valence band and Fermi level. Formation of a conduction filament (CF) is found essential for conduction in resistive random access memory (RRAM), and the computational analysis clarified that induction of oxygen vacancies is vital for the formation of CF. Finally, this work presents a detailed discussion and understanding of resistive switching in aluminum oxide-based RRAM, which is significant in the advancement of non-volatile data storage application.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0016027</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-5502-1114</orcidid><orcidid>https://orcid.org/0000-0002-6934-0949</orcidid><orcidid>https://orcid.org/0000-0001-5705-3611</orcidid><oa>free_for_read</oa></addata></record>
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subjects Aluminum
Aluminum oxide
Conduction
Data storage
Density functional theory
Experimentation
Nickel
Oxygen
Random access memory
Switching
Thickness
Vacancies
Valence band
title Resistive switching in Al2O3 based trilayer structure with varying parameters via experimentation and computation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T03%3A04%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Resistive%20switching%20in%20Al2O3%20based%20trilayer%20structure%20with%20varying%20parameters%20via%20experimentation%20and%20computation&rft.jtitle=AIP%20advances&rft.au=Fatheema,%20Jameela&rft.date=2020-11-01&rft.volume=10&rft.issue=11&rft.spage=115218&rft.epage=115218-6&rft.pages=115218-115218-6&rft.issn=2158-3226&rft.eissn=2158-3226&rft.coden=AAIDBI&rft_id=info:doi/10.1063/5.0016027&rft_dat=%3Cproquest_scita%3E2462247685%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2462247685&rft_id=info:pmid/&rft_doaj_id=oai_doaj_org_article_35cfad0e90bd4941a8ff429e52ec7082&rfr_iscdi=true