Enhancing the photoelectrical performance of graphene/4H-SiC/graphene detector by tuning a Schottky barrier by bias

Graphene/4H-SiC/graphene photodetectors, as well as graphene/4H-SiC heterojunctions, have been fabricated and characterized by utilizing a heating decomposition method. High-quality graphene has been grown on an n− doped 4H-SiC substrate along with a 900 °C hydrogenation process. Temperature-depende...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2020-08, Vol.117 (7)
Hauptverfasser:	Sun, Cunzhi, Chen, Xiufang, Hong, Rongdun, Li, Xiaomeng, Xu, Xiangang, Chen, Xiaping, Cai, Jiafa, Zhang, Xue-Ao, Cai, Weiwei, Wu, Zhengyun, Zhang, Feng
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bias Current voltage characteristics Dark current Electron diffusion Graphene Heterojunctions Photoelectricity Photometers Quantum efficiency Silicon dioxide Silicon substrates Temperature dependence
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!