Ti-doped alumina based reliable resistive switching in sub-μA regime

Ti-doped alumina based reliable resistive switching in sub-μA regime

We investigated the low current resistive switching behavior using Ti-doped Al2O3 and sub-stoichiometric TaOx layers. The optimized concentrations of Ti and O in each Al2O3 and TaOx layer can make the resistive switching device show the stable retention characteristic and 3-bit operation in the curr...

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Veröffentlicht in:Applied physics letters 2020-05, Vol.116 (21)
Hauptverfasser: Lee, Dong Kyu, Kim, Gun Hwan, Sohn, Hyunchul, Yang, Min Kyu
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Sprache:eng
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Aluminum oxide
Applied physics
Load resistance
Low currents
Optimization
Oxygen
Switching
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creator Lee, Dong Kyu
Kim, Gun Hwan
Sohn, Hyunchul
Yang, Min Kyu
description We investigated the low current resistive switching behavior using Ti-doped Al2O3 and sub-stoichiometric TaOx layers. The optimized concentrations of Ti and O in each Al2O3 and TaOx layer can make the resistive switching device show the stable retention characteristic and 3-bit operation in the current regime under 1 μA. Doped Ti in the Al2O3 layer generated oxygen vacancies to facilitate fluent resistive switching, and the TaOx layer with an appropriate oxygen concentration played the role of an oxygen reservoir and load resistance for reliable retention and electric pulse compatible characteristics, respectively. We presented the materials optimization processes and comparative resistive switching characteristics in detail.
doi_str_mv 10.1063/5.0011310
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subjects Aluminum oxide
Applied physics
Load resistance
Low currents
Optimization
Oxygen
Switching
title Ti-doped alumina based reliable resistive switching in sub-μA regime
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