Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection
Obtaining short-wavelength-infrared (SWIR; 1.4 μm–3.0 μm) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. We demonstrate a non-equilibrium method for hyperdoping germanium with selenium or tellurium for dopant-mediated SWIR photodetection...
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| Veröffentlicht in: | AIP advances 2020-07, Vol.10 (7), p.075028-075028-6 |
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| creator | Gandhi, Hemi H. Pastor, David Tran, Tuan T. Kalchmair, Stefan Smillie, Lachlan A. Mailoa, Jonathan P. Milazzo, Ruggero Napolitani, Enrico Loncar, Marko Williams, James S. Aziz, Michael J. Mazur, Eric |
| description | Obtaining short-wavelength-infrared (SWIR; 1.4 μm–3.0 μm) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. We demonstrate a non-equilibrium method for hyperdoping germanium with selenium or tellurium for dopant-mediated SWIR photodetection. By ion-implanting Se or Te into Ge wafers and restoring crystallinity with pulsed laser melting induced rapid solidification, we obtain single crystalline materials with peak Se and Te concentrations of 1020 cm−3 (104 times the solubility limits). These hyperdoped materials exhibit sub-bandgap absorption of light up to wavelengths of at least 3.0 μm, with their sub-bandgap optical absorption coefficients comparable to those of commercial SWIR photodetection materials. Although previous studies of Ge-based photodetectors have reported a sub-bandgap optoelectronic response only at low temperature, we report room-temperature sub-bandgap SWIR photodetection at wavelengths as long as 3.0 μm from rudimentary hyperdoped Ge:Se and Ge:Te photodetectors. |
| doi_str_mv | 10.1063/5.0008281 |
| format | Article |
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We demonstrate a non-equilibrium method for hyperdoping germanium with selenium or tellurium for dopant-mediated SWIR photodetection. By ion-implanting Se or Te into Ge wafers and restoring crystallinity with pulsed laser melting induced rapid solidification, we obtain single crystalline materials with peak Se and Te concentrations of 1020 cm−3 (104 times the solubility limits). These hyperdoped materials exhibit sub-bandgap absorption of light up to wavelengths of at least 3.0 μm, with their sub-bandgap optical absorption coefficients comparable to those of commercial SWIR photodetection materials. Although previous studies of Ge-based photodetectors have reported a sub-bandgap optoelectronic response only at low temperature, we report room-temperature sub-bandgap SWIR photodetection at wavelengths as long as 3.0 μm from rudimentary hyperdoped Ge:Se and Ge:Te photodetectors.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/5.0008281</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Absorptivity ; Crystal structure ; Crystallinity ; Electromagnetic absorption ; Energy gap ; Germanium ; Laser beam melting ; Low temperature ; Optoelectronics ; Photometers ; Pulsed lasers ; Rapid solidification ; Room temperature ; Selenium ; Tellurium ; Wavelengths</subject><ispartof>AIP advances, 2020-07, Vol.10 (7), p.075028-075028-6</ispartof><rights>Author(s)</rights><rights>2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c465t-adb33dc17fbeffb398f8857b9bd12ccb2c3e0d3d1764fb8b8d49da3741ff48943</citedby><cites>FETCH-LOGICAL-c465t-adb33dc17fbeffb398f8857b9bd12ccb2c3e0d3d1764fb8b8d49da3741ff48943</cites><orcidid>0000-0003-2239-6192 ; 0000-0002-2562-8860 ; 0000-0002-8607-8559 ; 0000-0001-8634-1452 ; 0000-0003-2975-3973 ; 0000-0002-7586-3797 ; 0000-0001-9657-9456 ; 0000-0001-7542-9352</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,550,776,780,860,881,2095,27903,27904</link.rule.ids><backlink>$$Uhttps://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-420818$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Gandhi, Hemi H.</creatorcontrib><creatorcontrib>Pastor, David</creatorcontrib><creatorcontrib>Tran, Tuan T.</creatorcontrib><creatorcontrib>Kalchmair, Stefan</creatorcontrib><creatorcontrib>Smillie, Lachlan A.</creatorcontrib><creatorcontrib>Mailoa, Jonathan P.</creatorcontrib><creatorcontrib>Milazzo, Ruggero</creatorcontrib><creatorcontrib>Napolitani, Enrico</creatorcontrib><creatorcontrib>Loncar, Marko</creatorcontrib><creatorcontrib>Williams, James S.</creatorcontrib><creatorcontrib>Aziz, Michael J.</creatorcontrib><creatorcontrib>Mazur, Eric</creatorcontrib><title>Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection</title><title>AIP advances</title><description>Obtaining short-wavelength-infrared (SWIR; 1.4 μm–3.0 μm) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. 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1.4 μm–3.0 μm) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. We demonstrate a non-equilibrium method for hyperdoping germanium with selenium or tellurium for dopant-mediated SWIR photodetection. By ion-implanting Se or Te into Ge wafers and restoring crystallinity with pulsed laser melting induced rapid solidification, we obtain single crystalline materials with peak Se and Te concentrations of 1020 cm−3 (104 times the solubility limits). These hyperdoped materials exhibit sub-bandgap absorption of light up to wavelengths of at least 3.0 μm, with their sub-bandgap optical absorption coefficients comparable to those of commercial SWIR photodetection materials. Although previous studies of Ge-based photodetectors have reported a sub-bandgap optoelectronic response only at low temperature, we report room-temperature sub-bandgap SWIR photodetection at wavelengths as long as 3.0 μm from rudimentary hyperdoped Ge:Se and Ge:Te photodetectors.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0008281</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-2239-6192</orcidid><orcidid>https://orcid.org/0000-0002-2562-8860</orcidid><orcidid>https://orcid.org/0000-0002-8607-8559</orcidid><orcidid>https://orcid.org/0000-0001-8634-1452</orcidid><orcidid>https://orcid.org/0000-0003-2975-3973</orcidid><orcidid>https://orcid.org/0000-0002-7586-3797</orcidid><orcidid>https://orcid.org/0000-0001-9657-9456</orcidid><orcidid>https://orcid.org/0000-0001-7542-9352</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Absorptivity Crystal structure Crystallinity Electromagnetic absorption Energy gap Germanium Laser beam melting Low temperature Optoelectronics Photometers Pulsed lasers Rapid solidification Room temperature Selenium Tellurium Wavelengths |
| title | Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection |
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