Zn-induced layer exchange of p- and n-type nanocrystalline SiGe layers for flexible thermoelectrics
Fermi-level control in a polycrystalline SiGe layer is challenging, especially under a low thermal budget owing to the low activation rate of impurities and defect-induced acceptors. Here, we demonstrate the low-temperature (120–350 °C) synthesis of nanocrystalline p- and n-type Si1−xGex (x: 0–1) la...
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Veröffentlicht in: | Applied physics letters 2020-05, Vol.116 (18) |
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description | Fermi-level control in a polycrystalline SiGe layer is challenging, especially under a low thermal budget owing to the low activation rate of impurities and defect-induced acceptors. Here, we demonstrate the low-temperature (120–350 °C) synthesis of nanocrystalline p- and n-type Si1−xGex (x: 0–1) layers using the layer exchange technique with a Zn catalyst. Pure Zn formed p-type SiGe layers (hole concentration: 1020 cm−3 for x ≥ 0.8) due to the shallow acceptor level of Zn in Ge. Conversely, As-doped Zn allowed us to synthesize n-type SiGe layers (electron concentration: 1019 cm−3 for x ≤ 0.3) at the lowest ever temperature of 350 °C, owing to the self-organized As doping to SiGe during layer exchange. The resulting p-type Si0.2Ge0.8 and n-type Si0.85Ge0.15 layers exhibited the largest ever power factors (280 μW/mK2 for the p-type and 15 μW/mK2 for the n-type), for SiGe fabricated on a flexible plastic sheet. The low-temperature synthesis technology, for both p- and n-type SiGe layers, opens up the possibility of developing human-friendly, highly reliable, flexible devices including thermoelectric sheets. |
doi_str_mv | 10.1063/5.0006958 |
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Here, we demonstrate the low-temperature (120–350 °C) synthesis of nanocrystalline p- and n-type Si1−xGex (x: 0–1) layers using the layer exchange technique with a Zn catalyst. Pure Zn formed p-type SiGe layers (hole concentration: 1020 cm−3 for x ≥ 0.8) due to the shallow acceptor level of Zn in Ge. Conversely, As-doped Zn allowed us to synthesize n-type SiGe layers (electron concentration: 1019 cm−3 for x ≤ 0.3) at the lowest ever temperature of 350 °C, owing to the self-organized As doping to SiGe during layer exchange. The resulting p-type Si0.2Ge0.8 and n-type Si0.85Ge0.15 layers exhibited the largest ever power factors (280 μW/mK2 for the p-type and 15 μW/mK2 for the n-type), for SiGe fabricated on a flexible plastic sheet. 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The low-temperature synthesis technology, for both p- and n-type SiGe layers, opens up the possibility of developing human-friendly, highly reliable, flexible devices including thermoelectric sheets.</description><subject>Applied physics</subject><subject>Exchanging</subject><subject>Low temperature</subject><subject>Nanocrystals</subject><subject>Silicon germanides</subject><subject>Synthesis</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp90E1LxDAQBuAgCq6rB_9BwJNC1qTZNs1RFl0FwYN68RLyMXW7dJOadGX776100YPgaZjhmRl4ETpndMZowa_zGaW0kHl5gCaMCkE4Y-UhmgxTToY5O0YnKa2HNs84nyD75knt3daCw43uIWLY2ZX274BDhVuCtXfYk65vAXvtg4196nTT1B7wc72EcSnhKkRcNbCrTQO4W0HcBGjAdrG26RQdVbpJcLavU_R6d_uyuCePT8uHxc0jsXORdcRKrcHZPHPcltW8KjmXWaELo11hpBDGacqMo4WYW5OB1KALxmwpckNNJud8ii7Gu20MH1tInVqHbfTDS5VxKSTjeS4GdTkqG0NKESrVxnqjY68YVd8ZqlztMxzs1WiTrTvd1cH_4M8Qf6FqXfUf_nv5C-ssgNI</recordid><startdate>20200504</startdate><enddate>20200504</enddate><creator>Tsuji, M.</creator><creator>Kusano, K.</creator><creator>Suemasu, T.</creator><creator>Toko, K.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6012-4986</orcidid><orcidid>https://orcid.org/0000-0002-3936-0519</orcidid></search><sort><creationdate>20200504</creationdate><title>Zn-induced layer exchange of p- and n-type nanocrystalline SiGe layers for flexible thermoelectrics</title><author>Tsuji, M. ; Kusano, K. ; Suemasu, T. ; Toko, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c472t-c9aaedc52d3c8f4f833926a6bad6b977bda01bd0674cb2e9aea611c875b0b2943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Applied physics</topic><topic>Exchanging</topic><topic>Low temperature</topic><topic>Nanocrystals</topic><topic>Silicon germanides</topic><topic>Synthesis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsuji, M.</creatorcontrib><creatorcontrib>Kusano, K.</creatorcontrib><creatorcontrib>Suemasu, T.</creatorcontrib><creatorcontrib>Toko, K.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsuji, M.</au><au>Kusano, K.</au><au>Suemasu, T.</au><au>Toko, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Zn-induced layer exchange of p- and n-type nanocrystalline SiGe layers for flexible thermoelectrics</atitle><jtitle>Applied physics letters</jtitle><date>2020-05-04</date><risdate>2020</risdate><volume>116</volume><issue>18</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Fermi-level control in a polycrystalline SiGe layer is challenging, especially under a low thermal budget owing to the low activation rate of impurities and defect-induced acceptors. 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subjects | Applied physics Exchanging Low temperature Nanocrystals Silicon germanides Synthesis |
title | Zn-induced layer exchange of p- and n-type nanocrystalline SiGe layers for flexible thermoelectrics |
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