Interface defect engineering for high-performance MOSFETs with novel carrier mobility model: Theory and experimental verification

As the conventional hydrogen-termination method has a limited ability to improve the interface quality between SiO2 and its Si substrate, an alternative termination method to reduce the influence of interface states is necessary. Interface engineering using first-principles calculations to suppress...

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Veröffentlicht in:	AIP advances 2020-05, Vol.10 (5), p.055020-055020-15
Hauptverfasser:	Ishihara, Takamitsu, Nakasaki, Yasushi, Matsushita, Daisuke, Tatsumura, Kosuke, Kato, Koichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Atomic properties Carrier mobility Dipoles First principles Fluorine Hydrogen Low temperature MOSFETs Oxidation Oxygen Silicon dioxide Silicon substrates
Online-Zugang:	Volltext
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