Long optical coherence times of shallow-implanted, negatively charged silicon vacancy centers in diamond
The creation of single, negatively charged silicon vacancy ( SiV −) centers in well-defined diamond layers close to the host surface is a crucial step for the development of diamond-based quantum optic devices with many applications in nanophotonics, quantum sensing, or quantum information science....
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| Veröffentlicht in: | Applied physics letters 2020-02, Vol.116 (6) |
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| container_title | Applied physics letters |
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| creator | Lang, Johannes Häußler, Stefan Fuhrmann, Jens Waltrich, Richard Laddha, Sunny Scharpf, Jochen Kubanek, Alexander Naydenov, Boris Jelezko, Fedor |
| description | The creation of single, negatively charged silicon vacancy (
SiV
−) centers in well-defined diamond layers close to the host surface is a crucial step for the development of diamond-based quantum optic devices with many applications in nanophotonics, quantum sensing, or quantum information science. Here, we report on the creation of shallow (10 nm below the surface), single
SiV
− centers in diamond using low energy
Si
+ ion implantation with subsequent high temperature annealing at 1500 °C. We show transition linewidths down to 99 MHz and narrow inhomogeneous distributions. Furthermore, we achieved a reduction of homogeneous linewidths by a factor of 2 after removing subsurface damage using oxygen plasma processing. These results not only give insights into the formation process of
SiV
− centers but also indicate a favorable processing method to fabricate shallow single quantum emitters in diamond perfectly suited for coupling to nanostructures on the diamond surface. |
| doi_str_mv | 10.1063/1.5143014 |
| format | Article |
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SiV
−) centers in well-defined diamond layers close to the host surface is a crucial step for the development of diamond-based quantum optic devices with many applications in nanophotonics, quantum sensing, or quantum information science. Here, we report on the creation of shallow (10 nm below the surface), single
SiV
− centers in diamond using low energy
Si
+ ion implantation with subsequent high temperature annealing at 1500 °C. We show transition linewidths down to 99 MHz and narrow inhomogeneous distributions. Furthermore, we achieved a reduction of homogeneous linewidths by a factor of 2 after removing subsurface damage using oxygen plasma processing. These results not only give insights into the formation process of
SiV
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SiV
−) centers in well-defined diamond layers close to the host surface is a crucial step for the development of diamond-based quantum optic devices with many applications in nanophotonics, quantum sensing, or quantum information science. Here, we report on the creation of shallow (10 nm below the surface), single
SiV
− centers in diamond using low energy
Si
+ ion implantation with subsequent high temperature annealing at 1500 °C. We show transition linewidths down to 99 MHz and narrow inhomogeneous distributions. Furthermore, we achieved a reduction of homogeneous linewidths by a factor of 2 after removing subsurface damage using oxygen plasma processing. These results not only give insights into the formation process of
SiV
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SiV
−) centers in well-defined diamond layers close to the host surface is a crucial step for the development of diamond-based quantum optic devices with many applications in nanophotonics, quantum sensing, or quantum information science. Here, we report on the creation of shallow (10 nm below the surface), single
SiV
− centers in diamond using low energy
Si
+ ion implantation with subsequent high temperature annealing at 1500 °C. We show transition linewidths down to 99 MHz and narrow inhomogeneous distributions. Furthermore, we achieved a reduction of homogeneous linewidths by a factor of 2 after removing subsurface damage using oxygen plasma processing. These results not only give insights into the formation process of
SiV
− centers but also indicate a favorable processing method to fabricate shallow single quantum emitters in diamond perfectly suited for coupling to nanostructures on the diamond surface.</abstract><doi>10.1063/1.5143014</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-9385-2461</orcidid></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| title | Long optical coherence times of shallow-implanted, negatively charged silicon vacancy centers in diamond |
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