Long optical coherence times of shallow-implanted, negatively charged silicon vacancy centers in diamond
The creation of single, negatively charged silicon vacancy ( SiV −) centers in well-defined diamond layers close to the host surface is a crucial step for the development of diamond-based quantum optic devices with many applications in nanophotonics, quantum sensing, or quantum information science....
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| Veröffentlicht in: | Applied physics letters 2020-02, Vol.116 (6), Article 064001 |
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| container_title | Applied physics letters |
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| creator | Lang, Johannes Häußler, Stefan Fuhrmann, Jens Waltrich, Richard Laddha, Sunny Scharpf, Jochen Kubanek, Alexander Naydenov, Boris Jelezko, Fedor |
| description | The creation of single, negatively charged silicon vacancy (
SiV
−) centers in well-defined diamond layers close to the host surface is a crucial step for the development of diamond-based quantum optic devices with many applications in nanophotonics, quantum sensing, or quantum information science. Here, we report on the creation of shallow (10 nm below the surface), single
SiV
− centers in diamond using low energy
Si
+ ion implantation with subsequent high temperature annealing at 1500 °C. We show transition linewidths down to 99 MHz and narrow inhomogeneous distributions. Furthermore, we achieved a reduction of homogeneous linewidths by a factor of 2 after removing subsurface damage using oxygen plasma processing. These results not only give insights into the formation process of
SiV
− centers but also indicate a favorable processing method to fabricate shallow single quantum emitters in diamond perfectly suited for coupling to nanostructures on the diamond surface. |
| doi_str_mv | 10.1063/1.5143014 |
| format | Article |
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SiV
−) centers in well-defined diamond layers close to the host surface is a crucial step for the development of diamond-based quantum optic devices with many applications in nanophotonics, quantum sensing, or quantum information science. Here, we report on the creation of shallow (10 nm below the surface), single
SiV
− centers in diamond using low energy
Si
+ ion implantation with subsequent high temperature annealing at 1500 °C. We show transition linewidths down to 99 MHz and narrow inhomogeneous distributions. Furthermore, we achieved a reduction of homogeneous linewidths by a factor of 2 after removing subsurface damage using oxygen plasma processing. These results not only give insights into the formation process of
SiV
− centers but also indicate a favorable processing method to fabricate shallow single quantum emitters in diamond perfectly suited for coupling to nanostructures on the diamond surface.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5143014</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>MELVILLE: Amer Inst Physics</publisher><subject>Physical Sciences ; Physics ; Physics, Applied ; Science & Technology</subject><ispartof>Applied physics letters, 2020-02, Vol.116 (6), Article 064001</ispartof><rights>Author(s)</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>true</woscitedreferencessubscribed><woscitedreferencescount>26</woscitedreferencescount><woscitedreferencesoriginalsourcerecordid>wos000538749100001</woscitedreferencesoriginalsourcerecordid><citedby>FETCH-LOGICAL-c365t-a190f5e9a758735c000b8004d6143766ba23cae4a38546c2d03d15052d92c4cb3</citedby><cites>FETCH-LOGICAL-c365t-a190f5e9a758735c000b8004d6143766ba23cae4a38546c2d03d15052d92c4cb3</cites><orcidid>0000-0001-9385-2461 ; 0000-0003-3628-5450 ; 0000-0002-2417-1985 ; 0000-0003-1656-1067 ; 0000-0002-5215-3880</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.5143014$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,781,785,795,4513,27928,27929,76388</link.rule.ids></links><search><creatorcontrib>Lang, Johannes</creatorcontrib><creatorcontrib>Häußler, Stefan</creatorcontrib><creatorcontrib>Fuhrmann, Jens</creatorcontrib><creatorcontrib>Waltrich, Richard</creatorcontrib><creatorcontrib>Laddha, Sunny</creatorcontrib><creatorcontrib>Scharpf, Jochen</creatorcontrib><creatorcontrib>Kubanek, Alexander</creatorcontrib><creatorcontrib>Naydenov, Boris</creatorcontrib><creatorcontrib>Jelezko, Fedor</creatorcontrib><title>Long optical coherence times of shallow-implanted, negatively charged silicon vacancy centers in diamond</title><title>Applied physics letters</title><addtitle>APPL PHYS LETT</addtitle><description>The creation of single, negatively charged silicon vacancy (
SiV
−) centers in well-defined diamond layers close to the host surface is a crucial step for the development of diamond-based quantum optic devices with many applications in nanophotonics, quantum sensing, or quantum information science. Here, we report on the creation of shallow (10 nm below the surface), single
SiV
− centers in diamond using low energy
Si
+ ion implantation with subsequent high temperature annealing at 1500 °C. We show transition linewidths down to 99 MHz and narrow inhomogeneous distributions. Furthermore, we achieved a reduction of homogeneous linewidths by a factor of 2 after removing subsurface damage using oxygen plasma processing. These results not only give insights into the formation process of
SiV
− centers but also indicate a favorable processing method to fabricate shallow single quantum emitters in diamond perfectly suited for coupling to nanostructures on the diamond surface.</description><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics, Applied</subject><subject>Science & Technology</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>AOWDO</sourceid><recordid>eNqNkEtLxDAUhYMoOI4u_AfZ-uiYNE0fSym-YMCNrkt6k04jbVKS2mH-vRk66EpxdR9893LOQeiSkhUlKbujK04TRmhyhBaUZFnEKM2P0YIQwqK04PQUnXn_EUYeM7ZA7dqaDbbDqEF0GGyrnDKg8Kh75bFtsG9F19ltpPuhE2ZU8hYbtRGjnlS3w9AKt1ESe91psAZPAoSBsFcBdR5rg6UWvTXyHJ00ovPq4lCX6P3x4a18jtavTy_l_ToClvIxErQgDVeFyHieMQ5BaJ0Tksg02MrStBYxA6ESwXKepBBLwiTlwYwsYkigZkt0Nf8FZ713qqkGp3vhdhUl1T6iilaHiAKbz-xW1bbxoPfWv_l9RizPkoKGjtBSj8G1NaX9NGM4vfn_aaCvZzqA85c_Vf0KT9b9gNUgG_YFVMyWDg</recordid><startdate>20200210</startdate><enddate>20200210</enddate><creator>Lang, Johannes</creator><creator>Häußler, Stefan</creator><creator>Fuhrmann, Jens</creator><creator>Waltrich, Richard</creator><creator>Laddha, Sunny</creator><creator>Scharpf, Jochen</creator><creator>Kubanek, Alexander</creator><creator>Naydenov, Boris</creator><creator>Jelezko, Fedor</creator><general>Amer Inst Physics</general><scope>AOWDO</scope><scope>BLEPL</scope><scope>DTL</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-9385-2461</orcidid><orcidid>https://orcid.org/0000-0003-3628-5450</orcidid><orcidid>https://orcid.org/0000-0002-2417-1985</orcidid><orcidid>https://orcid.org/0000-0003-1656-1067</orcidid><orcidid>https://orcid.org/0000-0002-5215-3880</orcidid></search><sort><creationdate>20200210</creationdate><title>Long optical coherence times of shallow-implanted, negatively charged silicon vacancy centers in diamond</title><author>Lang, Johannes ; Häußler, Stefan ; Fuhrmann, Jens ; Waltrich, Richard ; Laddha, Sunny ; Scharpf, Jochen ; Kubanek, Alexander ; Naydenov, Boris ; Jelezko, Fedor</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c365t-a190f5e9a758735c000b8004d6143766ba23cae4a38546c2d03d15052d92c4cb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Physical Sciences</topic><topic>Physics</topic><topic>Physics, Applied</topic><topic>Science & Technology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lang, Johannes</creatorcontrib><creatorcontrib>Häußler, Stefan</creatorcontrib><creatorcontrib>Fuhrmann, Jens</creatorcontrib><creatorcontrib>Waltrich, Richard</creatorcontrib><creatorcontrib>Laddha, Sunny</creatorcontrib><creatorcontrib>Scharpf, Jochen</creatorcontrib><creatorcontrib>Kubanek, Alexander</creatorcontrib><creatorcontrib>Naydenov, Boris</creatorcontrib><creatorcontrib>Jelezko, Fedor</creatorcontrib><collection>Web of Science - Science Citation Index Expanded - 2020</collection><collection>Web of Science Core Collection</collection><collection>Science Citation Index Expanded</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lang, Johannes</au><au>Häußler, Stefan</au><au>Fuhrmann, Jens</au><au>Waltrich, Richard</au><au>Laddha, Sunny</au><au>Scharpf, Jochen</au><au>Kubanek, Alexander</au><au>Naydenov, Boris</au><au>Jelezko, Fedor</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Long optical coherence times of shallow-implanted, negatively charged silicon vacancy centers in diamond</atitle><jtitle>Applied physics letters</jtitle><stitle>APPL PHYS LETT</stitle><date>2020-02-10</date><risdate>2020</risdate><volume>116</volume><issue>6</issue><artnum>064001</artnum><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The creation of single, negatively charged silicon vacancy (
SiV
−) centers in well-defined diamond layers close to the host surface is a crucial step for the development of diamond-based quantum optic devices with many applications in nanophotonics, quantum sensing, or quantum information science. Here, we report on the creation of shallow (10 nm below the surface), single
SiV
− centers in diamond using low energy
Si
+ ion implantation with subsequent high temperature annealing at 1500 °C. We show transition linewidths down to 99 MHz and narrow inhomogeneous distributions. Furthermore, we achieved a reduction of homogeneous linewidths by a factor of 2 after removing subsurface damage using oxygen plasma processing. These results not only give insights into the formation process of
SiV
− centers but also indicate a favorable processing method to fabricate shallow single quantum emitters in diamond perfectly suited for coupling to nanostructures on the diamond surface.</abstract><cop>MELVILLE</cop><pub>Amer Inst Physics</pub><doi>10.1063/1.5143014</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-9385-2461</orcidid><orcidid>https://orcid.org/0000-0003-3628-5450</orcidid><orcidid>https://orcid.org/0000-0002-2417-1985</orcidid><orcidid>https://orcid.org/0000-0003-1656-1067</orcidid><orcidid>https://orcid.org/0000-0002-5215-3880</orcidid></addata></record> |
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| ispartof | Applied physics letters, 2020-02, Vol.116 (6), Article 064001 |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Physical Sciences Physics Physics, Applied Science & Technology |
| title | Long optical coherence times of shallow-implanted, negatively charged silicon vacancy centers in diamond |
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