Direct observation of charge accumulation in quantum well solar cells by cross-sectional Kelvin probe force microscopy

We report here the direct observation of charge accumulation in GaAs/AlGaAs multiple quantum well (MQW) solar cells by employing cross-sectional Kelvin probe force microscopy (KPFM). This sample is characterized by thin barrier layers that enable miniband formation. The contact potential difference,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2020-04, Vol.116 (16)
Hauptverfasser: Noda, Takeshi, Ishida, Nobuyuki, Mano, Takaaki, Fujita, Daisuke
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 16
container_start_page
container_title Applied physics letters
container_volume 116
creator Noda, Takeshi
Ishida, Nobuyuki
Mano, Takaaki
Fujita, Daisuke
description We report here the direct observation of charge accumulation in GaAs/AlGaAs multiple quantum well (MQW) solar cells by employing cross-sectional Kelvin probe force microscopy (KPFM). This sample is characterized by thin barrier layers that enable miniband formation. The contact potential difference, or potential between the tip and the semiconductor sample, was measured along the p–i–n junction. We observed, under illuminated conditions, a change in the potential gradient, or bending, at a position of the MQW layer, but not in the reference sample without quantum well. This clearly shows that charge is accumulated in the MQW region. We also found that electron accumulation in the MQW layer and the density measured on the surface is about 1 × 1011 cm−2. Our experimental results show that KPFM is a powerful way of understanding the device physics of nanostructure-based solar cells.
doi_str_mv 10.1063/1.5142438
format Article
fullrecord <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_5142438</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2392118136</sourcerecordid><originalsourceid>FETCH-LOGICAL-c393t-fb11cb718762449d5a79d1fed71bed1d6a6ee5c081fd6e9ae49a9dd1f04b11323</originalsourceid><addsrcrecordid>eNqd0EtLxDAQB_AgCq6rB79BwJNC10zT51F844IXPYc0mWiXdtNN2sp-e7PbBe-e8uA3w8yfkEtgC2AZv4VFCkmc8OKIzIDlecQBimMyY4zxKCtTOCVn3q_CM405n5HxoXaoemorj26UfW3X1BqqvqX7QiqVGtqhmb7rNd0Mct0PLf3BpqHeNtJRFa6eVluqnPU-8qFZwLKhb9iMoaRztkJqrFNI23qHlO225-TEyMbjxeGck8-nx4_7l2j5_vx6f7eMFC95H5kKQFU5FHkWJ0mpU5mXGgzqHCrUoDOZIaaKFWB0hqXEpJSlDoIloZLHfE6upr5hjM2AvhcrO7gwnhcxL-OQDfAsqOtJ7XdwaETn6la6rQAmdrEKEIdYg72ZrFd1vw_mf3i07g-KThv-CxZ7iH0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2392118136</pqid></control><display><type>article</type><title>Direct observation of charge accumulation in quantum well solar cells by cross-sectional Kelvin probe force microscopy</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Noda, Takeshi ; Ishida, Nobuyuki ; Mano, Takaaki ; Fujita, Daisuke</creator><creatorcontrib>Noda, Takeshi ; Ishida, Nobuyuki ; Mano, Takaaki ; Fujita, Daisuke</creatorcontrib><description>We report here the direct observation of charge accumulation in GaAs/AlGaAs multiple quantum well (MQW) solar cells by employing cross-sectional Kelvin probe force microscopy (KPFM). This sample is characterized by thin barrier layers that enable miniband formation. The contact potential difference, or potential between the tip and the semiconductor sample, was measured along the p–i–n junction. We observed, under illuminated conditions, a change in the potential gradient, or bending, at a position of the MQW layer, but not in the reference sample without quantum well. This clearly shows that charge is accumulated in the MQW region. We also found that electron accumulation in the MQW layer and the density measured on the surface is about 1 × 1011 cm−2. Our experimental results show that KPFM is a powerful way of understanding the device physics of nanostructure-based solar cells.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5142438</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Accumulation ; Applied physics ; Barrier layers ; Contact potentials ; Cross-sections ; Microscopy ; Photovoltaic cells ; Quantum wells ; Solar cells ; Thin films</subject><ispartof>Applied physics letters, 2020-04, Vol.116 (16)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c393t-fb11cb718762449d5a79d1fed71bed1d6a6ee5c081fd6e9ae49a9dd1f04b11323</citedby><cites>FETCH-LOGICAL-c393t-fb11cb718762449d5a79d1fed71bed1d6a6ee5c081fd6e9ae49a9dd1f04b11323</cites><orcidid>0000-0002-6705-8552 ; 0000-0002-6955-260X ; 0000-0001-7025-0265</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.5142438$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76127</link.rule.ids></links><search><creatorcontrib>Noda, Takeshi</creatorcontrib><creatorcontrib>Ishida, Nobuyuki</creatorcontrib><creatorcontrib>Mano, Takaaki</creatorcontrib><creatorcontrib>Fujita, Daisuke</creatorcontrib><title>Direct observation of charge accumulation in quantum well solar cells by cross-sectional Kelvin probe force microscopy</title><title>Applied physics letters</title><description>We report here the direct observation of charge accumulation in GaAs/AlGaAs multiple quantum well (MQW) solar cells by employing cross-sectional Kelvin probe force microscopy (KPFM). This sample is characterized by thin barrier layers that enable miniband formation. The contact potential difference, or potential between the tip and the semiconductor sample, was measured along the p–i–n junction. We observed, under illuminated conditions, a change in the potential gradient, or bending, at a position of the MQW layer, but not in the reference sample without quantum well. This clearly shows that charge is accumulated in the MQW region. We also found that electron accumulation in the MQW layer and the density measured on the surface is about 1 × 1011 cm−2. Our experimental results show that KPFM is a powerful way of understanding the device physics of nanostructure-based solar cells.</description><subject>Accumulation</subject><subject>Applied physics</subject><subject>Barrier layers</subject><subject>Contact potentials</subject><subject>Cross-sections</subject><subject>Microscopy</subject><subject>Photovoltaic cells</subject><subject>Quantum wells</subject><subject>Solar cells</subject><subject>Thin films</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqd0EtLxDAQB_AgCq6rB79BwJNC10zT51F844IXPYc0mWiXdtNN2sp-e7PbBe-e8uA3w8yfkEtgC2AZv4VFCkmc8OKIzIDlecQBimMyY4zxKCtTOCVn3q_CM405n5HxoXaoemorj26UfW3X1BqqvqX7QiqVGtqhmb7rNd0Mct0PLf3BpqHeNtJRFa6eVluqnPU-8qFZwLKhb9iMoaRztkJqrFNI23qHlO225-TEyMbjxeGck8-nx4_7l2j5_vx6f7eMFC95H5kKQFU5FHkWJ0mpU5mXGgzqHCrUoDOZIaaKFWB0hqXEpJSlDoIloZLHfE6upr5hjM2AvhcrO7gwnhcxL-OQDfAsqOtJ7XdwaETn6la6rQAmdrEKEIdYg72ZrFd1vw_mf3i07g-KThv-CxZ7iH0</recordid><startdate>20200420</startdate><enddate>20200420</enddate><creator>Noda, Takeshi</creator><creator>Ishida, Nobuyuki</creator><creator>Mano, Takaaki</creator><creator>Fujita, Daisuke</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-6705-8552</orcidid><orcidid>https://orcid.org/0000-0002-6955-260X</orcidid><orcidid>https://orcid.org/0000-0001-7025-0265</orcidid></search><sort><creationdate>20200420</creationdate><title>Direct observation of charge accumulation in quantum well solar cells by cross-sectional Kelvin probe force microscopy</title><author>Noda, Takeshi ; Ishida, Nobuyuki ; Mano, Takaaki ; Fujita, Daisuke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-fb11cb718762449d5a79d1fed71bed1d6a6ee5c081fd6e9ae49a9dd1f04b11323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Accumulation</topic><topic>Applied physics</topic><topic>Barrier layers</topic><topic>Contact potentials</topic><topic>Cross-sections</topic><topic>Microscopy</topic><topic>Photovoltaic cells</topic><topic>Quantum wells</topic><topic>Solar cells</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Noda, Takeshi</creatorcontrib><creatorcontrib>Ishida, Nobuyuki</creatorcontrib><creatorcontrib>Mano, Takaaki</creatorcontrib><creatorcontrib>Fujita, Daisuke</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Noda, Takeshi</au><au>Ishida, Nobuyuki</au><au>Mano, Takaaki</au><au>Fujita, Daisuke</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct observation of charge accumulation in quantum well solar cells by cross-sectional Kelvin probe force microscopy</atitle><jtitle>Applied physics letters</jtitle><date>2020-04-20</date><risdate>2020</risdate><volume>116</volume><issue>16</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report here the direct observation of charge accumulation in GaAs/AlGaAs multiple quantum well (MQW) solar cells by employing cross-sectional Kelvin probe force microscopy (KPFM). This sample is characterized by thin barrier layers that enable miniband formation. The contact potential difference, or potential between the tip and the semiconductor sample, was measured along the p–i–n junction. We observed, under illuminated conditions, a change in the potential gradient, or bending, at a position of the MQW layer, but not in the reference sample without quantum well. This clearly shows that charge is accumulated in the MQW region. We also found that electron accumulation in the MQW layer and the density measured on the surface is about 1 × 1011 cm−2. Our experimental results show that KPFM is a powerful way of understanding the device physics of nanostructure-based solar cells.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5142438</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-6705-8552</orcidid><orcidid>https://orcid.org/0000-0002-6955-260X</orcidid><orcidid>https://orcid.org/0000-0001-7025-0265</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2020-04, Vol.116 (16)
issn 0003-6951
1077-3118
language eng
recordid cdi_scitation_primary_10_1063_1_5142438
source AIP Journals Complete; Alma/SFX Local Collection
subjects Accumulation
Applied physics
Barrier layers
Contact potentials
Cross-sections
Microscopy
Photovoltaic cells
Quantum wells
Solar cells
Thin films
title Direct observation of charge accumulation in quantum well solar cells by cross-sectional Kelvin probe force microscopy
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T18%3A50%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Direct%20observation%20of%20charge%20accumulation%20in%20quantum%20well%20solar%20cells%20by%20cross-sectional%20Kelvin%20probe%20force%20microscopy&rft.jtitle=Applied%20physics%20letters&rft.au=Noda,%20Takeshi&rft.date=2020-04-20&rft.volume=116&rft.issue=16&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.5142438&rft_dat=%3Cproquest_scita%3E2392118136%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2392118136&rft_id=info:pmid/&rfr_iscdi=true