Direct observation of charge accumulation in quantum well solar cells by cross-sectional Kelvin probe force microscopy
We report here the direct observation of charge accumulation in GaAs/AlGaAs multiple quantum well (MQW) solar cells by employing cross-sectional Kelvin probe force microscopy (KPFM). This sample is characterized by thin barrier layers that enable miniband formation. The contact potential difference,...
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Veröffentlicht in: | Applied physics letters 2020-04, Vol.116 (16) |
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creator | Noda, Takeshi Ishida, Nobuyuki Mano, Takaaki Fujita, Daisuke |
description | We report here the direct observation of charge accumulation in GaAs/AlGaAs multiple quantum well (MQW) solar cells by employing cross-sectional Kelvin probe force microscopy (KPFM). This sample is characterized by thin barrier layers that enable miniband formation. The contact potential difference, or potential between the tip and the semiconductor sample, was measured along the p–i–n junction. We observed, under illuminated conditions, a change in the potential gradient, or bending, at a position of the MQW layer, but not in the reference sample without quantum well. This clearly shows that charge is accumulated in the MQW region. We also found that electron accumulation in the MQW layer and the density measured on the surface is about 1 × 1011 cm−2. Our experimental results show that KPFM is a powerful way of understanding the device physics of nanostructure-based solar cells. |
doi_str_mv | 10.1063/1.5142438 |
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This sample is characterized by thin barrier layers that enable miniband formation. The contact potential difference, or potential between the tip and the semiconductor sample, was measured along the p–i–n junction. We observed, under illuminated conditions, a change in the potential gradient, or bending, at a position of the MQW layer, but not in the reference sample without quantum well. This clearly shows that charge is accumulated in the MQW region. We also found that electron accumulation in the MQW layer and the density measured on the surface is about 1 × 1011 cm−2. Our experimental results show that KPFM is a powerful way of understanding the device physics of nanostructure-based solar cells.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5142438</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Accumulation ; Applied physics ; Barrier layers ; Contact potentials ; Cross-sections ; Microscopy ; Photovoltaic cells ; Quantum wells ; Solar cells ; Thin films</subject><ispartof>Applied physics letters, 2020-04, Vol.116 (16)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c393t-fb11cb718762449d5a79d1fed71bed1d6a6ee5c081fd6e9ae49a9dd1f04b11323</citedby><cites>FETCH-LOGICAL-c393t-fb11cb718762449d5a79d1fed71bed1d6a6ee5c081fd6e9ae49a9dd1f04b11323</cites><orcidid>0000-0002-6705-8552 ; 0000-0002-6955-260X ; 0000-0001-7025-0265</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.5142438$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76127</link.rule.ids></links><search><creatorcontrib>Noda, Takeshi</creatorcontrib><creatorcontrib>Ishida, Nobuyuki</creatorcontrib><creatorcontrib>Mano, Takaaki</creatorcontrib><creatorcontrib>Fujita, Daisuke</creatorcontrib><title>Direct observation of charge accumulation in quantum well solar cells by cross-sectional Kelvin probe force microscopy</title><title>Applied physics letters</title><description>We report here the direct observation of charge accumulation in GaAs/AlGaAs multiple quantum well (MQW) solar cells by employing cross-sectional Kelvin probe force microscopy (KPFM). This sample is characterized by thin barrier layers that enable miniband formation. The contact potential difference, or potential between the tip and the semiconductor sample, was measured along the p–i–n junction. We observed, under illuminated conditions, a change in the potential gradient, or bending, at a position of the MQW layer, but not in the reference sample without quantum well. This clearly shows that charge is accumulated in the MQW region. We also found that electron accumulation in the MQW layer and the density measured on the surface is about 1 × 1011 cm−2. Our experimental results show that KPFM is a powerful way of understanding the device physics of nanostructure-based solar cells.</description><subject>Accumulation</subject><subject>Applied physics</subject><subject>Barrier layers</subject><subject>Contact potentials</subject><subject>Cross-sections</subject><subject>Microscopy</subject><subject>Photovoltaic cells</subject><subject>Quantum wells</subject><subject>Solar cells</subject><subject>Thin films</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqd0EtLxDAQB_AgCq6rB79BwJNC10zT51F844IXPYc0mWiXdtNN2sp-e7PbBe-e8uA3w8yfkEtgC2AZv4VFCkmc8OKIzIDlecQBimMyY4zxKCtTOCVn3q_CM405n5HxoXaoemorj26UfW3X1BqqvqX7QiqVGtqhmb7rNd0Mct0PLf3BpqHeNtJRFa6eVluqnPU-8qFZwLKhb9iMoaRztkJqrFNI23qHlO225-TEyMbjxeGck8-nx4_7l2j5_vx6f7eMFC95H5kKQFU5FHkWJ0mpU5mXGgzqHCrUoDOZIaaKFWB0hqXEpJSlDoIloZLHfE6upr5hjM2AvhcrO7gwnhcxL-OQDfAsqOtJ7XdwaETn6la6rQAmdrEKEIdYg72ZrFd1vw_mf3i07g-KThv-CxZ7iH0</recordid><startdate>20200420</startdate><enddate>20200420</enddate><creator>Noda, Takeshi</creator><creator>Ishida, Nobuyuki</creator><creator>Mano, Takaaki</creator><creator>Fujita, Daisuke</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-6705-8552</orcidid><orcidid>https://orcid.org/0000-0002-6955-260X</orcidid><orcidid>https://orcid.org/0000-0001-7025-0265</orcidid></search><sort><creationdate>20200420</creationdate><title>Direct observation of charge accumulation in quantum well solar cells by cross-sectional Kelvin probe force microscopy</title><author>Noda, Takeshi ; Ishida, Nobuyuki ; Mano, Takaaki ; Fujita, Daisuke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-fb11cb718762449d5a79d1fed71bed1d6a6ee5c081fd6e9ae49a9dd1f04b11323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Accumulation</topic><topic>Applied physics</topic><topic>Barrier layers</topic><topic>Contact potentials</topic><topic>Cross-sections</topic><topic>Microscopy</topic><topic>Photovoltaic cells</topic><topic>Quantum wells</topic><topic>Solar cells</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Noda, Takeshi</creatorcontrib><creatorcontrib>Ishida, Nobuyuki</creatorcontrib><creatorcontrib>Mano, Takaaki</creatorcontrib><creatorcontrib>Fujita, Daisuke</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Noda, Takeshi</au><au>Ishida, Nobuyuki</au><au>Mano, Takaaki</au><au>Fujita, Daisuke</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct observation of charge accumulation in quantum well solar cells by cross-sectional Kelvin probe force microscopy</atitle><jtitle>Applied physics letters</jtitle><date>2020-04-20</date><risdate>2020</risdate><volume>116</volume><issue>16</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report here the direct observation of charge accumulation in GaAs/AlGaAs multiple quantum well (MQW) solar cells by employing cross-sectional Kelvin probe force microscopy (KPFM). This sample is characterized by thin barrier layers that enable miniband formation. The contact potential difference, or potential between the tip and the semiconductor sample, was measured along the p–i–n junction. We observed, under illuminated conditions, a change in the potential gradient, or bending, at a position of the MQW layer, but not in the reference sample without quantum well. This clearly shows that charge is accumulated in the MQW region. We also found that electron accumulation in the MQW layer and the density measured on the surface is about 1 × 1011 cm−2. Our experimental results show that KPFM is a powerful way of understanding the device physics of nanostructure-based solar cells.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5142438</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-6705-8552</orcidid><orcidid>https://orcid.org/0000-0002-6955-260X</orcidid><orcidid>https://orcid.org/0000-0001-7025-0265</orcidid></addata></record> |
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subjects | Accumulation Applied physics Barrier layers Contact potentials Cross-sections Microscopy Photovoltaic cells Quantum wells Solar cells Thin films |
title | Direct observation of charge accumulation in quantum well solar cells by cross-sectional Kelvin probe force microscopy |
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