Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE

The effect of Furnace Annealing (FA) and Rapid Thermal annealing (RTA) on the structural and optical properties of GaAs1 − xBix/GaAs single quantum wells grown on (001) and (311)B substrates by molecular beam epitaxy was investigated. The structural properties were investigated by high-resolution x-...

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Veröffentlicht in:	Journal of applied physics 2020-03, Vol.127 (12)
Hauptverfasser:	Alghamdi, Haifa, Gordo, Vanessa Orsi, Schmidbauer, Martin, Felix, Jorlandio F., Alhassan, Sultan, Alhassni, Amra, Prando, Gabriela Augusta, Coelho-Júnior, Horácio, Gunes, Mustafa, Galeti, Helder Vinicius Avanço, Gobato, Yara Galvão, Henini, Mohamed
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Annealing furnaces Coherent scattering Composition Epitaxial growth Gallium arsenide Molecular beam epitaxy Optical properties Photoluminescence Quantum wells Substrates X-ray diffraction
Online-Zugang:	Volltext
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