Modulation of the optical absorption edge of ε- and κ - Ga2O3 due to Co impurities caused by band structure changes: Work function measurements and first-principle calculations
Despite a wide bandgap of 4.8 eV, Ga 2 O 3 has good electrical conductivity and thus has a wide range of potential applications. We previously reported that the bandgap of ϵ - Ga 2 O 3 is widened by Co-doping; here, we present a theoretical discussion of the changes in the electronic state induced b...
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| Veröffentlicht in: | Journal of applied physics 2020-02, Vol.127 (6) |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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