Growth of Pr2Ir2O7 thin films using solid phase epitaxy
(111)-oriented pyrochlore Pr 2Ir 2O 7 epitaxial thin films were successfully fabricated on yttria-stabilized zirconia (111) substrates by means of solid phase epitaxy, namely, the combination of pulsed laser deposition (PLD) of an amorphous precursor film at room temperature, followed by epitaxial c...
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| Veröffentlicht in: | Journal of applied physics 2020-01, Vol.127 (3) |
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| container_title | Journal of applied physics |
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| creator | Ohtsuki, Takumi Tian, Zhaoming Halim, Mario Nakatsuji, Satoru Lippmaa, Mikk |
| description | (111)-oriented pyrochlore Pr
2Ir
2O
7 epitaxial thin films were successfully fabricated on yttria-stabilized zirconia (111) substrates by means of solid phase epitaxy, namely, the combination of pulsed laser deposition (PLD) of an amorphous precursor film at room temperature, followed by epitaxial crystallization in an ex situ post-annealing process in air. The Pr
2Ir
2O
7 phase cannot be obtained in a conventional in situ PLD process because of severe Ir loss. The Pr
2Ir
2O
7 thin films showed metallic electronic conductivity and the spontaneous Hall effect. These transport properties are similar to the ones reported for bulk single crystal samples, indicating that the thin films had high crystalline quality. |
| doi_str_mv | 10.1063/1.5128537 |
| format | Article |
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2Ir
2O
7 epitaxial thin films were successfully fabricated on yttria-stabilized zirconia (111) substrates by means of solid phase epitaxy, namely, the combination of pulsed laser deposition (PLD) of an amorphous precursor film at room temperature, followed by epitaxial crystallization in an ex situ post-annealing process in air. The Pr
2Ir
2O
7 phase cannot be obtained in a conventional in situ PLD process because of severe Ir loss. The Pr
2Ir
2O
7 thin films showed metallic electronic conductivity and the spontaneous Hall effect. These transport properties are similar to the ones reported for bulk single crystal samples, indicating that the thin films had high crystalline quality.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5128537</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Crystallization ; Epitaxial growth ; Hall effect ; Pulsed laser deposition ; Pulsed lasers ; Room temperature ; Single crystals ; Solid phases ; Substrates ; Thin films ; Transport properties ; Yttria-stabilized zirconia ; Yttrium oxide ; Zirconium dioxide</subject><ispartof>Journal of applied physics, 2020-01, Vol.127 (3)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c393t-a0b6f7377f45d39cfd58248ff5b2b695e3795b46affd70655bc97b408c2e0f9c3</citedby><cites>FETCH-LOGICAL-c393t-a0b6f7377f45d39cfd58248ff5b2b695e3795b46affd70655bc97b408c2e0f9c3</cites><orcidid>0000-0001-9134-659X ; 0000-0001-5057-2099</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.5128537$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76127</link.rule.ids></links><search><creatorcontrib>Ohtsuki, Takumi</creatorcontrib><creatorcontrib>Tian, Zhaoming</creatorcontrib><creatorcontrib>Halim, Mario</creatorcontrib><creatorcontrib>Nakatsuji, Satoru</creatorcontrib><creatorcontrib>Lippmaa, Mikk</creatorcontrib><title>Growth of Pr2Ir2O7 thin films using solid phase epitaxy</title><title>Journal of applied physics</title><description>(111)-oriented pyrochlore Pr
2Ir
2O
7 epitaxial thin films were successfully fabricated on yttria-stabilized zirconia (111) substrates by means of solid phase epitaxy, namely, the combination of pulsed laser deposition (PLD) of an amorphous precursor film at room temperature, followed by epitaxial crystallization in an ex situ post-annealing process in air. The Pr
2Ir
2O
7 phase cannot be obtained in a conventional in situ PLD process because of severe Ir loss. The Pr
2Ir
2O
7 thin films showed metallic electronic conductivity and the spontaneous Hall effect. These transport properties are similar to the ones reported for bulk single crystal samples, indicating that the thin films had high crystalline quality.</description><subject>Applied physics</subject><subject>Crystallization</subject><subject>Epitaxial growth</subject><subject>Hall effect</subject><subject>Pulsed laser deposition</subject><subject>Pulsed lasers</subject><subject>Room temperature</subject><subject>Single crystals</subject><subject>Solid phases</subject><subject>Substrates</subject><subject>Thin films</subject><subject>Transport properties</subject><subject>Yttria-stabilized zirconia</subject><subject>Yttrium oxide</subject><subject>Zirconium dioxide</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqd0EFLwzAYBuAgCs7pwX8Q8KTQ-SVpmuQoQ-dgMA96Dm2a2IyuqUmn7t9b2cC7p_fy8H58L0LXBGYECnZPZpxQyZk4QRMCUmWCczhFEwBKMqmEOkcXKW0ACJFMTZBYxPA1NDg4_BLpMtK1wEPjO-x8u014l3z3jlNofY37pkwW294P5ff-Ep25sk326phT9Pb0-Dp_zlbrxXL-sMoMU2zISqgKJ5gQLuc1U8bVXNJcOscrWhWKWyYUr_KidK4WUHBeGSWqHKShFpwybIpuDr19DB87mwa9CbvYjSc1ZTnkBZGKj-r2oEwMKUXrdB_9tox7TUD_7qKJPu4y2ruDTWb8ZPCh-x_-DPEP6r527Af53G8f</recordid><startdate>20200121</startdate><enddate>20200121</enddate><creator>Ohtsuki, Takumi</creator><creator>Tian, Zhaoming</creator><creator>Halim, Mario</creator><creator>Nakatsuji, Satoru</creator><creator>Lippmaa, Mikk</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-9134-659X</orcidid><orcidid>https://orcid.org/0000-0001-5057-2099</orcidid></search><sort><creationdate>20200121</creationdate><title>Growth of Pr2Ir2O7 thin films using solid phase epitaxy</title><author>Ohtsuki, Takumi ; Tian, Zhaoming ; Halim, Mario ; Nakatsuji, Satoru ; Lippmaa, Mikk</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-a0b6f7377f45d39cfd58248ff5b2b695e3795b46affd70655bc97b408c2e0f9c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Applied physics</topic><topic>Crystallization</topic><topic>Epitaxial growth</topic><topic>Hall effect</topic><topic>Pulsed laser deposition</topic><topic>Pulsed lasers</topic><topic>Room temperature</topic><topic>Single crystals</topic><topic>Solid phases</topic><topic>Substrates</topic><topic>Thin films</topic><topic>Transport properties</topic><topic>Yttria-stabilized zirconia</topic><topic>Yttrium oxide</topic><topic>Zirconium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ohtsuki, Takumi</creatorcontrib><creatorcontrib>Tian, Zhaoming</creatorcontrib><creatorcontrib>Halim, Mario</creatorcontrib><creatorcontrib>Nakatsuji, Satoru</creatorcontrib><creatorcontrib>Lippmaa, Mikk</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ohtsuki, Takumi</au><au>Tian, Zhaoming</au><au>Halim, Mario</au><au>Nakatsuji, Satoru</au><au>Lippmaa, Mikk</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of Pr2Ir2O7 thin films using solid phase epitaxy</atitle><jtitle>Journal of applied physics</jtitle><date>2020-01-21</date><risdate>2020</risdate><volume>127</volume><issue>3</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>(111)-oriented pyrochlore Pr
2Ir
2O
7 epitaxial thin films were successfully fabricated on yttria-stabilized zirconia (111) substrates by means of solid phase epitaxy, namely, the combination of pulsed laser deposition (PLD) of an amorphous precursor film at room temperature, followed by epitaxial crystallization in an ex situ post-annealing process in air. The Pr
2Ir
2O
7 phase cannot be obtained in a conventional in situ PLD process because of severe Ir loss. The Pr
2Ir
2O
7 thin films showed metallic electronic conductivity and the spontaneous Hall effect. These transport properties are similar to the ones reported for bulk single crystal samples, indicating that the thin films had high crystalline quality.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5128537</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0001-9134-659X</orcidid><orcidid>https://orcid.org/0000-0001-5057-2099</orcidid></addata></record> |
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| ispartof | Journal of applied physics, 2020-01, Vol.127 (3) |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Crystallization Epitaxial growth Hall effect Pulsed laser deposition Pulsed lasers Room temperature Single crystals Solid phases Substrates Thin films Transport properties Yttria-stabilized zirconia Yttrium oxide Zirconium dioxide |
| title | Growth of Pr2Ir2O7 thin films using solid phase epitaxy |
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