Atomically-resolved interface imaging and terahertz emission measurements of gallium arsenide epilayers
Semiconductor interfaces are the backbone of modern optoelectronic devices. In terahertz (THz) science, the narrow region of an interface is crucial in the emission process. However, reports on the direct correlation of THz emission with local interface properties remain scarce owing to the inherent...
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| Veröffentlicht in: | Journal of applied physics 2019-12, Vol.126 (23) |
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| creator | Balgos, M. H. Jaculbia, R. Prieto, E. A. Tani, M. Estacio, E. Salvador, A. Somintac, A. Hayazawa, N. Kim, Y. |
| description | Semiconductor interfaces are the backbone of modern optoelectronic devices. In terahertz (THz) science, the narrow region of an interface is crucial in the emission process. However, reports on the direct correlation of THz emission with local interface properties remain scarce owing to the inherent difficulty of using the same sample for nanoscale and macroscale studies. In this study, we combined scanning tunneling microscopy/spectroscopy (STM/STS) and THz emission spectroscopy to study the interface between a highly
n
+-doped and undoped gallium arsenide (GaAs). Using STS, we identify a carrier density of
1
×
10
15 cm
−
3 in the low-temperature-grown GaAs (LT-GaAs) layer, which we used to visualize the energy band diagram at the interface and the surface of LT-GaAs. THz emission intensity is higher in the LT-GaAs/
n
+-GaAs structures relative to semi-insulating GaAs owing to the high electric field at the interface regardless of the LT-GaAs layer thickness. Pump fluence dependence of THz showed that the thinner LT-GaAs layers saturate at lower pump fluence compared to thicker LT-GaAs and SI-GaAs. This behavior is explained by the built-in field screening by the photogenerated carriers and the free carriers from the
n
+-GaAs to the LT-GaAs. Our results demonstrate the utility of STM/STS to the design of semiconductor-based THz emitters. |
| doi_str_mv | 10.1063/1.5118815 |
| format | Article |
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n
+-doped and undoped gallium arsenide (GaAs). Using STS, we identify a carrier density of
1
×
10
15 cm
−
3 in the low-temperature-grown GaAs (LT-GaAs) layer, which we used to visualize the energy band diagram at the interface and the surface of LT-GaAs. THz emission intensity is higher in the LT-GaAs/
n
+-GaAs structures relative to semi-insulating GaAs owing to the high electric field at the interface regardless of the LT-GaAs layer thickness. Pump fluence dependence of THz showed that the thinner LT-GaAs layers saturate at lower pump fluence compared to thicker LT-GaAs and SI-GaAs. This behavior is explained by the built-in field screening by the photogenerated carriers and the free carriers from the
n
+-GaAs to the LT-GaAs. Our results demonstrate the utility of STM/STS to the design of semiconductor-based THz emitters.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5118815</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Arsenides ; Carrier density ; Electric fields ; Emission analysis ; Emitters ; Fluence ; Gallium arsenide ; Interfaces ; Interfacial properties ; Intermetallic compounds ; Low temperature ; Optoelectronic devices ; Scanning tunneling microscopy ; Spectrum analysis ; Thickness</subject><ispartof>Journal of applied physics, 2019-12, Vol.126 (23)</ispartof><rights>Author(s)</rights><rights>2019 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c393t-258d68872b5cfeddeb212f3c9e1e67ed4962a8cafc75d7cb4cbda6bcaaf9f8133</citedby><cites>FETCH-LOGICAL-c393t-258d68872b5cfeddeb212f3c9e1e67ed4962a8cafc75d7cb4cbda6bcaaf9f8133</cites><orcidid>0000-0002-0255-2605 ; 0000-0003-3156-2404 ; 0000-0002-5285-4505 ; 0000-0002-4938-571X ; 0000-0002-8286-9193 ; 0000-0001-6656-9871 ; 0000-0001-7730-0704</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.5118815$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4512,27924,27925,76384</link.rule.ids></links><search><creatorcontrib>Balgos, M. H.</creatorcontrib><creatorcontrib>Jaculbia, R.</creatorcontrib><creatorcontrib>Prieto, E. A.</creatorcontrib><creatorcontrib>Tani, M.</creatorcontrib><creatorcontrib>Estacio, E.</creatorcontrib><creatorcontrib>Salvador, A.</creatorcontrib><creatorcontrib>Somintac, A.</creatorcontrib><creatorcontrib>Hayazawa, N.</creatorcontrib><creatorcontrib>Kim, Y.</creatorcontrib><title>Atomically-resolved interface imaging and terahertz emission measurements of gallium arsenide epilayers</title><title>Journal of applied physics</title><description>Semiconductor interfaces are the backbone of modern optoelectronic devices. In terahertz (THz) science, the narrow region of an interface is crucial in the emission process. However, reports on the direct correlation of THz emission with local interface properties remain scarce owing to the inherent difficulty of using the same sample for nanoscale and macroscale studies. In this study, we combined scanning tunneling microscopy/spectroscopy (STM/STS) and THz emission spectroscopy to study the interface between a highly
n
+-doped and undoped gallium arsenide (GaAs). Using STS, we identify a carrier density of
1
×
10
15 cm
−
3 in the low-temperature-grown GaAs (LT-GaAs) layer, which we used to visualize the energy band diagram at the interface and the surface of LT-GaAs. THz emission intensity is higher in the LT-GaAs/
n
+-GaAs structures relative to semi-insulating GaAs owing to the high electric field at the interface regardless of the LT-GaAs layer thickness. Pump fluence dependence of THz showed that the thinner LT-GaAs layers saturate at lower pump fluence compared to thicker LT-GaAs and SI-GaAs. This behavior is explained by the built-in field screening by the photogenerated carriers and the free carriers from the
n
+-GaAs to the LT-GaAs. Our results demonstrate the utility of STM/STS to the design of semiconductor-based THz emitters.</description><subject>Applied physics</subject><subject>Arsenides</subject><subject>Carrier density</subject><subject>Electric fields</subject><subject>Emission analysis</subject><subject>Emitters</subject><subject>Fluence</subject><subject>Gallium arsenide</subject><subject>Interfaces</subject><subject>Interfacial properties</subject><subject>Intermetallic compounds</subject><subject>Low temperature</subject><subject>Optoelectronic devices</subject><subject>Scanning tunneling microscopy</subject><subject>Spectrum analysis</subject><subject>Thickness</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqd0MtKAzEUBuAgCtbqwjcIuFIYTSZzSZaleIOCG12HTHIypszNJFOoT2-kBfeuDhw-_sP5Ebqm5J6Sij3Q-5JSzml5ghaUcJHVZUlO0YKQnGZc1OIcXYSwJSQpJhaoXcWxd1p13T7zEMZuBwa7IYK3SgN2vWrd0GI1GJx26hN8_MbQuxDcOOAeVJg99DDEgEeL25Tj5h4rH2BwBjBMrlN78OESnVnVBbg6ziX6eHp8X79km7fn1_Vqk2kmWMzykpuK8zpvSm3BGGhymlumBVCoajCFqHLFtbK6Lk2tm0I3RlWNVsoKyyljS3RzyJ38-DVDiHI7zn5IJ2XOcl4UghZVUrcHpf0YggcrJ59e9XtJifztUVJ57DHZu4MN2kUV09v_w7vR_0E5Gct-ALl6hKo</recordid><startdate>20191221</startdate><enddate>20191221</enddate><creator>Balgos, M. H.</creator><creator>Jaculbia, R.</creator><creator>Prieto, E. A.</creator><creator>Tani, M.</creator><creator>Estacio, E.</creator><creator>Salvador, A.</creator><creator>Somintac, A.</creator><creator>Hayazawa, N.</creator><creator>Kim, Y.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0255-2605</orcidid><orcidid>https://orcid.org/0000-0003-3156-2404</orcidid><orcidid>https://orcid.org/0000-0002-5285-4505</orcidid><orcidid>https://orcid.org/0000-0002-4938-571X</orcidid><orcidid>https://orcid.org/0000-0002-8286-9193</orcidid><orcidid>https://orcid.org/0000-0001-6656-9871</orcidid><orcidid>https://orcid.org/0000-0001-7730-0704</orcidid></search><sort><creationdate>20191221</creationdate><title>Atomically-resolved interface imaging and terahertz emission measurements of gallium arsenide epilayers</title><author>Balgos, M. H. ; Jaculbia, R. ; Prieto, E. A. ; Tani, M. ; Estacio, E. ; Salvador, A. ; Somintac, A. ; Hayazawa, N. ; Kim, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-258d68872b5cfeddeb212f3c9e1e67ed4962a8cafc75d7cb4cbda6bcaaf9f8133</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Applied physics</topic><topic>Arsenides</topic><topic>Carrier density</topic><topic>Electric fields</topic><topic>Emission analysis</topic><topic>Emitters</topic><topic>Fluence</topic><topic>Gallium arsenide</topic><topic>Interfaces</topic><topic>Interfacial properties</topic><topic>Intermetallic compounds</topic><topic>Low temperature</topic><topic>Optoelectronic devices</topic><topic>Scanning tunneling microscopy</topic><topic>Spectrum analysis</topic><topic>Thickness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Balgos, M. H.</creatorcontrib><creatorcontrib>Jaculbia, R.</creatorcontrib><creatorcontrib>Prieto, E. A.</creatorcontrib><creatorcontrib>Tani, M.</creatorcontrib><creatorcontrib>Estacio, E.</creatorcontrib><creatorcontrib>Salvador, A.</creatorcontrib><creatorcontrib>Somintac, A.</creatorcontrib><creatorcontrib>Hayazawa, N.</creatorcontrib><creatorcontrib>Kim, Y.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Balgos, M. H.</au><au>Jaculbia, R.</au><au>Prieto, E. A.</au><au>Tani, M.</au><au>Estacio, E.</au><au>Salvador, A.</au><au>Somintac, A.</au><au>Hayazawa, N.</au><au>Kim, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atomically-resolved interface imaging and terahertz emission measurements of gallium arsenide epilayers</atitle><jtitle>Journal of applied physics</jtitle><date>2019-12-21</date><risdate>2019</risdate><volume>126</volume><issue>23</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Semiconductor interfaces are the backbone of modern optoelectronic devices. In terahertz (THz) science, the narrow region of an interface is crucial in the emission process. However, reports on the direct correlation of THz emission with local interface properties remain scarce owing to the inherent difficulty of using the same sample for nanoscale and macroscale studies. In this study, we combined scanning tunneling microscopy/spectroscopy (STM/STS) and THz emission spectroscopy to study the interface between a highly
n
+-doped and undoped gallium arsenide (GaAs). Using STS, we identify a carrier density of
1
×
10
15 cm
−
3 in the low-temperature-grown GaAs (LT-GaAs) layer, which we used to visualize the energy band diagram at the interface and the surface of LT-GaAs. THz emission intensity is higher in the LT-GaAs/
n
+-GaAs structures relative to semi-insulating GaAs owing to the high electric field at the interface regardless of the LT-GaAs layer thickness. Pump fluence dependence of THz showed that the thinner LT-GaAs layers saturate at lower pump fluence compared to thicker LT-GaAs and SI-GaAs. This behavior is explained by the built-in field screening by the photogenerated carriers and the free carriers from the
n
+-GaAs to the LT-GaAs. Our results demonstrate the utility of STM/STS to the design of semiconductor-based THz emitters.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5118815</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0002-0255-2605</orcidid><orcidid>https://orcid.org/0000-0003-3156-2404</orcidid><orcidid>https://orcid.org/0000-0002-5285-4505</orcidid><orcidid>https://orcid.org/0000-0002-4938-571X</orcidid><orcidid>https://orcid.org/0000-0002-8286-9193</orcidid><orcidid>https://orcid.org/0000-0001-6656-9871</orcidid><orcidid>https://orcid.org/0000-0001-7730-0704</orcidid></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Arsenides Carrier density Electric fields Emission analysis Emitters Fluence Gallium arsenide Interfaces Interfacial properties Intermetallic compounds Low temperature Optoelectronic devices Scanning tunneling microscopy Spectrum analysis Thickness |
| title | Atomically-resolved interface imaging and terahertz emission measurements of gallium arsenide epilayers |
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