Temperature- and pulse-dependent negative differential resistances in ZnO/Nb:SrTiO3 heterojunctions
Temperature- and pulse amplitude/width dependent current-voltage characteristics were performed to study the variance of negative differential resistance (NDR) features accompanying bipolar resistive switching. Interestingly, the absolute value of the NDR peak intensity is enhanced at first and then...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2019-11, Vol.115 (22) |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 22 |
container_start_page | |
container_title | Applied physics letters |
container_volume | 115 |
creator | Jia, Caihong Ren, Yong Yin, Yanfeng Zhang, Weifeng |
description | Temperature- and pulse amplitude/width dependent current-voltage characteristics were performed to study the variance of negative differential resistance (NDR) features accompanying bipolar resistive switching. Interestingly, the absolute value of the NDR peak intensity is enhanced at first and then weakened, while the NDR peak position gradually shifts toward the lower absolute bias value with an increase in temperature from 140 to 300 K, and shifts toward the larger absolute bias value with an increase in temperature from 300 to 400 K. Furthermore, the NDR peak is absent after applying a small and narrow positive pulse, while it gradually increases with increasing the applied pulse amplitude or width. These temperature- and pulse-dependent NDR behaviors can be fully understood based on a model of generation and drift of ionized oxygen vacancies coupled with trapping/detrapping electrons. The clarification of the mechanism will pave the way for practical applications. |
doi_str_mv | 10.1063/1.5115155 |
format | Article |
fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_5115155</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2317740396</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-b1cff163ed822c4b50f21354512dbc03c42b10c27bba907f73ece40508eb281a3</originalsourceid><addsrcrecordid>eNqd0E1LAzEQBuAgCtbqwX-w4Elh20yy2d16E_ELij1YL15Ckp1oSptdk2zBf--WFrx7GmZ4mGFeQi6BToCWfAoTASBAiCMyAlpVOQeoj8mIUsrzcibglJzFuBpawTgfEbPETYdBpT5gninfZF2_jpg32KFv0KfM46dKbotZ46zFMIycWmcBo4tJeYMxcz778Ivpq759C0u34NkXJgztqvcmudbHc3Ji1bD04lDH5P3xYXn_nM8XTy_3d_PccFalXIOxFkqOTc2YKbSglgEXhQDWaEO5KZgGaliltZrRylYcDRZU0Bo1q0HxMbna7-1C-91jTHLV9sEPJyXjUFUF5bNyUNd7ZUIbY0Aru-A2KvxIoHKXoQR5yHCwN3sbjUtq98z_8LYNf1B2jeW_gAiALA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2317740396</pqid></control><display><type>article</type><title>Temperature- and pulse-dependent negative differential resistances in ZnO/Nb:SrTiO3 heterojunctions</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Jia, Caihong ; Ren, Yong ; Yin, Yanfeng ; Zhang, Weifeng</creator><creatorcontrib>Jia, Caihong ; Ren, Yong ; Yin, Yanfeng ; Zhang, Weifeng</creatorcontrib><description>Temperature- and pulse amplitude/width dependent current-voltage characteristics were performed to study the variance of negative differential resistance (NDR) features accompanying bipolar resistive switching. Interestingly, the absolute value of the NDR peak intensity is enhanced at first and then weakened, while the NDR peak position gradually shifts toward the lower absolute bias value with an increase in temperature from 140 to 300 K, and shifts toward the larger absolute bias value with an increase in temperature from 300 to 400 K. Furthermore, the NDR peak is absent after applying a small and narrow positive pulse, while it gradually increases with increasing the applied pulse amplitude or width. These temperature- and pulse-dependent NDR behaviors can be fully understood based on a model of generation and drift of ionized oxygen vacancies coupled with trapping/detrapping electrons. The clarification of the mechanism will pave the way for practical applications.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5115155</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Bias ; Current voltage characteristics ; Heterojunctions ; Pulse amplitude ; Strontium titanates ; Temperature dependence ; Zinc oxide</subject><ispartof>Applied physics letters, 2019-11, Vol.115 (22)</ispartof><rights>Author(s)</rights><rights>2019 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-b1cff163ed822c4b50f21354512dbc03c42b10c27bba907f73ece40508eb281a3</citedby><cites>FETCH-LOGICAL-c327t-b1cff163ed822c4b50f21354512dbc03c42b10c27bba907f73ece40508eb281a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.5115155$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4512,27924,27925,76384</link.rule.ids></links><search><creatorcontrib>Jia, Caihong</creatorcontrib><creatorcontrib>Ren, Yong</creatorcontrib><creatorcontrib>Yin, Yanfeng</creatorcontrib><creatorcontrib>Zhang, Weifeng</creatorcontrib><title>Temperature- and pulse-dependent negative differential resistances in ZnO/Nb:SrTiO3 heterojunctions</title><title>Applied physics letters</title><description>Temperature- and pulse amplitude/width dependent current-voltage characteristics were performed to study the variance of negative differential resistance (NDR) features accompanying bipolar resistive switching. Interestingly, the absolute value of the NDR peak intensity is enhanced at first and then weakened, while the NDR peak position gradually shifts toward the lower absolute bias value with an increase in temperature from 140 to 300 K, and shifts toward the larger absolute bias value with an increase in temperature from 300 to 400 K. Furthermore, the NDR peak is absent after applying a small and narrow positive pulse, while it gradually increases with increasing the applied pulse amplitude or width. These temperature- and pulse-dependent NDR behaviors can be fully understood based on a model of generation and drift of ionized oxygen vacancies coupled with trapping/detrapping electrons. The clarification of the mechanism will pave the way for practical applications.</description><subject>Applied physics</subject><subject>Bias</subject><subject>Current voltage characteristics</subject><subject>Heterojunctions</subject><subject>Pulse amplitude</subject><subject>Strontium titanates</subject><subject>Temperature dependence</subject><subject>Zinc oxide</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqd0E1LAzEQBuAgCtbqwX-w4Elh20yy2d16E_ELij1YL15Ckp1oSptdk2zBf--WFrx7GmZ4mGFeQi6BToCWfAoTASBAiCMyAlpVOQeoj8mIUsrzcibglJzFuBpawTgfEbPETYdBpT5gninfZF2_jpg32KFv0KfM46dKbotZ46zFMIycWmcBo4tJeYMxcz778Ivpq759C0u34NkXJgztqvcmudbHc3Ji1bD04lDH5P3xYXn_nM8XTy_3d_PccFalXIOxFkqOTc2YKbSglgEXhQDWaEO5KZgGaliltZrRylYcDRZU0Bo1q0HxMbna7-1C-91jTHLV9sEPJyXjUFUF5bNyUNd7ZUIbY0Aru-A2KvxIoHKXoQR5yHCwN3sbjUtq98z_8LYNf1B2jeW_gAiALA</recordid><startdate>20191125</startdate><enddate>20191125</enddate><creator>Jia, Caihong</creator><creator>Ren, Yong</creator><creator>Yin, Yanfeng</creator><creator>Zhang, Weifeng</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20191125</creationdate><title>Temperature- and pulse-dependent negative differential resistances in ZnO/Nb:SrTiO3 heterojunctions</title><author>Jia, Caihong ; Ren, Yong ; Yin, Yanfeng ; Zhang, Weifeng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-b1cff163ed822c4b50f21354512dbc03c42b10c27bba907f73ece40508eb281a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Applied physics</topic><topic>Bias</topic><topic>Current voltage characteristics</topic><topic>Heterojunctions</topic><topic>Pulse amplitude</topic><topic>Strontium titanates</topic><topic>Temperature dependence</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jia, Caihong</creatorcontrib><creatorcontrib>Ren, Yong</creatorcontrib><creatorcontrib>Yin, Yanfeng</creatorcontrib><creatorcontrib>Zhang, Weifeng</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jia, Caihong</au><au>Ren, Yong</au><au>Yin, Yanfeng</au><au>Zhang, Weifeng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature- and pulse-dependent negative differential resistances in ZnO/Nb:SrTiO3 heterojunctions</atitle><jtitle>Applied physics letters</jtitle><date>2019-11-25</date><risdate>2019</risdate><volume>115</volume><issue>22</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Temperature- and pulse amplitude/width dependent current-voltage characteristics were performed to study the variance of negative differential resistance (NDR) features accompanying bipolar resistive switching. Interestingly, the absolute value of the NDR peak intensity is enhanced at first and then weakened, while the NDR peak position gradually shifts toward the lower absolute bias value with an increase in temperature from 140 to 300 K, and shifts toward the larger absolute bias value with an increase in temperature from 300 to 400 K. Furthermore, the NDR peak is absent after applying a small and narrow positive pulse, while it gradually increases with increasing the applied pulse amplitude or width. These temperature- and pulse-dependent NDR behaviors can be fully understood based on a model of generation and drift of ionized oxygen vacancies coupled with trapping/detrapping electrons. The clarification of the mechanism will pave the way for practical applications.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5115155</doi><tpages>5</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0003-6951 |
ispartof | Applied physics letters, 2019-11, Vol.115 (22) |
issn | 0003-6951 1077-3118 |
language | eng |
recordid | cdi_scitation_primary_10_1063_1_5115155 |
source | AIP Journals Complete; Alma/SFX Local Collection |
subjects | Applied physics Bias Current voltage characteristics Heterojunctions Pulse amplitude Strontium titanates Temperature dependence Zinc oxide |
title | Temperature- and pulse-dependent negative differential resistances in ZnO/Nb:SrTiO3 heterojunctions |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T14%3A05%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Temperature-%20and%20pulse-dependent%20negative%20differential%20resistances%20in%20ZnO/Nb:SrTiO3%20heterojunctions&rft.jtitle=Applied%20physics%20letters&rft.au=Jia,%20Caihong&rft.date=2019-11-25&rft.volume=115&rft.issue=22&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.5115155&rft_dat=%3Cproquest_scita%3E2317740396%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2317740396&rft_id=info:pmid/&rfr_iscdi=true |