Electron-acoustic phonon relaxation rate in disordered single layer graphene

Transport of charge carriers in graphene and graphene based systems is strongly affected by disorder and the precise relationship between the underlying features of disorder and graphene’s characteristic transport properties is still an unresolved issue and being hotly debated. We in this paper report our investigations on the electron- acoustic phonon relaxation time in disordered single layergraphene with dynamic screened deformation potential (DP) using non equilibrium Green’s function method. The temperature as well as mean free path dependences of electron phonon relaxation rate have been numerically computed. We find that the temperature power exponent is enhanced (T5.41) due to disorder in graphene in comparison to earlier reported T4 dependence observed in case of disorder less graphene both for the case of static and dynamic DP at lower temperatures (Bloch Gruneisien Regime). However the influence of disorder at higher temperatures and low mean free path is not very pronounced due to enhanced electron phonon scattering