Electrical transport properties of Tb and Mn codoped bismuth ferrite embedded poly (vinyl alcohol) nanocomposite film
Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA...
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description | Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV. |
doi_str_mv | 10.1063/1.5113268 |
format | Conference Proceeding |
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M. ; Sharma, Veerendra K. ; Biswas, Arup</contributor><creatorcontrib>Halder, Monalisa ; Meikap, Ajit Kumar ; Yusuf, S. M. ; Sharma, Veerendra K. ; Biswas, Arup</creatorcontrib><description>Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.5113268</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Bismuth ferrite ; Crystallites ; Electric potential ; Nanocomposites ; Nanoparticles ; Relaxation time ; Schottky diodes ; Sol-gel processes ; Specific heat ; Strain analysis ; Temperature dependence ; Transport properties</subject><ispartof>AIP conference proceedings, 2019, Vol.2115 (1)</ispartof><rights>Author(s)</rights><rights>2019 Author(s). 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Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.</description><subject>Bismuth ferrite</subject><subject>Crystallites</subject><subject>Electric potential</subject><subject>Nanocomposites</subject><subject>Nanoparticles</subject><subject>Relaxation time</subject><subject>Schottky diodes</subject><subject>Sol-gel processes</subject><subject>Specific heat</subject><subject>Strain analysis</subject><subject>Temperature dependence</subject><subject>Transport properties</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2019</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp9kM1KAzEYRYMoWKsL3yDgRoWp-Zkkk6WU-gMVNxXchcwkQ1MykzFJC317p7TgztW3uIf7cS4AtxjNMOL0Cc8YxpTw6gxMMGO4EBzzczBBSJYFKen3JbhKaYMQkUJUE7BdeNvk6BrtYY66T0OIGQ4xDDZmZxMMLVzVUPcGfvSwCWYMDKxd6rZ5DVsbo8sW2q62xozBEPwe3u9cv_dQ-yasg3-Ave5DE7ohpAPbOt9dg4tW-2RvTncKvl4Wq_lbsfx8fZ8_L4uBMJoLJupRxrSc1gJX1GjbYNKgSlTcoFJboQ0tccVlTVspNRqtNJNVWSMiWM0knYK7Y-8o9LO1KatN2MZ-fKkIYZwSgSQdqccjlRqXdXahV0N0nY57hZE6zKqwOs36H7wL8Q9Ug2npL0DJeUE</recordid><startdate>20190711</startdate><enddate>20190711</enddate><creator>Halder, Monalisa</creator><creator>Meikap, Ajit Kumar</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20190711</creationdate><title>Electrical transport properties of Tb and Mn codoped bismuth ferrite embedded poly (vinyl alcohol) nanocomposite film</title><author>Halder, Monalisa ; Meikap, Ajit Kumar</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p253t-57b113df63b7183daec12c08786d04ae7ad341869b3f99a0002a5984b0275b593</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Bismuth ferrite</topic><topic>Crystallites</topic><topic>Electric potential</topic><topic>Nanocomposites</topic><topic>Nanoparticles</topic><topic>Relaxation time</topic><topic>Schottky diodes</topic><topic>Sol-gel processes</topic><topic>Specific heat</topic><topic>Strain analysis</topic><topic>Temperature dependence</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Halder, Monalisa</creatorcontrib><creatorcontrib>Meikap, Ajit Kumar</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Halder, Monalisa</au><au>Meikap, Ajit Kumar</au><au>Yusuf, S. M.</au><au>Sharma, Veerendra K.</au><au>Biswas, Arup</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Electrical transport properties of Tb and Mn codoped bismuth ferrite embedded poly (vinyl alcohol) nanocomposite film</atitle><btitle>AIP conference proceedings</btitle><date>2019-07-11</date><risdate>2019</risdate><volume>2115</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5113268</doi><tpages>4</tpages></addata></record> |
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subjects | Bismuth ferrite Crystallites Electric potential Nanocomposites Nanoparticles Relaxation time Schottky diodes Sol-gel processes Specific heat Strain analysis Temperature dependence Transport properties |
title | Electrical transport properties of Tb and Mn codoped bismuth ferrite embedded poly (vinyl alcohol) nanocomposite film |
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