Electrostatic gating activated single flexural phonon dependent mobility in graphene in BG regime

Electron scattering by single out-of-plane (Flexural) phonon mode and its contribution to mobility in graphene under electrostatic gating has been studied as a function of electron temperature, carrier concentration and coupling deformation potential in the BG regime. A recent study has reported the excitation of single flexural phonon due to breaking of reflection symmetry on gating the graphene; which otherwise manifests only two flexural phonons scattering. Motivated by this, we investigated electron-single flexural phonon scattering and obtained analytical results for scattering rate and mobility and compare the results with that of in plane phonons in the BG regime. We find the single flexural phonon dependent carrier mobility to vary as T3/2 with temperature and as n1/2 with carrier concentration. This is in contrast to reported in-plane behaviour where mobility is independent of carrier concentration in BG regime.