Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs

This study focuses on the relationship among defects, annealing temperatures, and solar cell properties in the molecular beam epitaxy-grown GaInNAsSb solar cells. Samples with an n-i-p double heterostructure were annealed at various temperatures from 650 to 850 °C, and the dynamics of deep-level def...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 2019-10, Vol.126 (14)
Hauptverfasser:	Miyashita, Naoya, He, Yilun, Ahsan, Nazmul, Okada, Yoshitaka
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Defect annealing Dependence Electrical impedance Electroluminescence Epitaxial growth Heterostructures Lattice matching Molecular beam epitaxy Photovoltaic cells Quantum efficiency Solar cells Spectrum analysis
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!