Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs
This study focuses on the relationship among defects, annealing temperatures, and solar cell properties in the molecular beam epitaxy-grown GaInNAsSb solar cells. Samples with an n-i-p double heterostructure were annealed at various temperatures from 650 to 850 °C, and the dynamics of deep-level def...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2019-10, Vol.126 (14) |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 14 |
| container_start_page | |
| container_title | Journal of applied physics |
| container_volume | 126 |
| creator | Miyashita, Naoya He, Yilun Ahsan, Nazmul Okada, Yoshitaka |
| description | This study focuses on the relationship among defects, annealing temperatures, and solar cell properties in the molecular beam epitaxy-grown GaInNAsSb solar cells. Samples with an n-i-p double heterostructure were annealed at various temperatures from 650 to 850 °C, and the dynamics of deep-level defects were analyzed. A significant improvement was obtained between 750 and 800 °C due to suppression of both the traps and the nonradiative recombination centers. They were distinguished using the DC bias dependence of admittance spectra and were reconfirmed from the electroluminescence and quantum efficiency spectroscopy studies. |
| doi_str_mv | 10.1063/1.5111588 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_5111588</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2305300913</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-b37f084e6852bad15c3dc4abd6f3b5624686d04801d72379a923ce73fb4be82b3</originalsourceid><addsrcrecordid>eNp90M1LwzAYx_EgCs7pwf8g4EmhMy9Nmx7H0CkMPajgLeTlKWa0aW2ywf57Kxt6EDw9lw_fB34IXVIyo6Tgt3QmKKVCyiM0oURWWSkEOUYTQhjNZFVWp-gsxjUhlEpeTdD7PATQDW7BeZ3AYQfQZw1socFuF3TrbcQ-4KV-DE_z-GKw880mAQ4-Dd5BxI1OyVvIWp3sxxhI3Yjn8Ryd1LqJcHG4U_R2f_e6eMhWz8vHxXyVWc7KlBle1kTmUEjBjHZUWO5sro0ram5EwfJCFo7kklBXMl5WumLcQslrkxuQzPAputp3-6H73EBMat1thjC-VIwTwQmpKB_V9V7ZoYtxgFr1g2_1sFOUqO_hFFWH4UZ7s7fR-qST78IP3nbDL1S9q__Df8tf_8J6-g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2305300913</pqid></control><display><type>article</type><title>Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Miyashita, Naoya ; He, Yilun ; Ahsan, Nazmul ; Okada, Yoshitaka</creator><creatorcontrib>Miyashita, Naoya ; He, Yilun ; Ahsan, Nazmul ; Okada, Yoshitaka</creatorcontrib><description>This study focuses on the relationship among defects, annealing temperatures, and solar cell properties in the molecular beam epitaxy-grown GaInNAsSb solar cells. Samples with an n-i-p double heterostructure were annealed at various temperatures from 650 to 850 °C, and the dynamics of deep-level defects were analyzed. A significant improvement was obtained between 750 and 800 °C due to suppression of both the traps and the nonradiative recombination centers. They were distinguished using the DC bias dependence of admittance spectra and were reconfirmed from the electroluminescence and quantum efficiency spectroscopy studies.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5111588</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Defect annealing ; Dependence ; Electrical impedance ; Electroluminescence ; Epitaxial growth ; Heterostructures ; Lattice matching ; Molecular beam epitaxy ; Photovoltaic cells ; Quantum efficiency ; Solar cells ; Spectrum analysis</subject><ispartof>Journal of applied physics, 2019-10, Vol.126 (14)</ispartof><rights>Author(s)</rights><rights>2019 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-b37f084e6852bad15c3dc4abd6f3b5624686d04801d72379a923ce73fb4be82b3</citedby><cites>FETCH-LOGICAL-c327t-b37f084e6852bad15c3dc4abd6f3b5624686d04801d72379a923ce73fb4be82b3</cites><orcidid>0000-0003-1311-1589 ; 0000-0001-7086-9017 ; 0000-0002-1547-5477</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.5111588$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4510,27923,27924,76155</link.rule.ids></links><search><creatorcontrib>Miyashita, Naoya</creatorcontrib><creatorcontrib>He, Yilun</creatorcontrib><creatorcontrib>Ahsan, Nazmul</creatorcontrib><creatorcontrib>Okada, Yoshitaka</creatorcontrib><title>Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs</title><title>Journal of applied physics</title><description>This study focuses on the relationship among defects, annealing temperatures, and solar cell properties in the molecular beam epitaxy-grown GaInNAsSb solar cells. Samples with an n-i-p double heterostructure were annealed at various temperatures from 650 to 850 °C, and the dynamics of deep-level defects were analyzed. A significant improvement was obtained between 750 and 800 °C due to suppression of both the traps and the nonradiative recombination centers. They were distinguished using the DC bias dependence of admittance spectra and were reconfirmed from the electroluminescence and quantum efficiency spectroscopy studies.</description><subject>Applied physics</subject><subject>Defect annealing</subject><subject>Dependence</subject><subject>Electrical impedance</subject><subject>Electroluminescence</subject><subject>Epitaxial growth</subject><subject>Heterostructures</subject><subject>Lattice matching</subject><subject>Molecular beam epitaxy</subject><subject>Photovoltaic cells</subject><subject>Quantum efficiency</subject><subject>Solar cells</subject><subject>Spectrum analysis</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp90M1LwzAYx_EgCs7pwf8g4EmhMy9Nmx7H0CkMPajgLeTlKWa0aW2ywf57Kxt6EDw9lw_fB34IXVIyo6Tgt3QmKKVCyiM0oURWWSkEOUYTQhjNZFVWp-gsxjUhlEpeTdD7PATQDW7BeZ3AYQfQZw1socFuF3TrbcQ-4KV-DE_z-GKw880mAQ4-Dd5BxI1OyVvIWp3sxxhI3Yjn8Ryd1LqJcHG4U_R2f_e6eMhWz8vHxXyVWc7KlBle1kTmUEjBjHZUWO5sro0ram5EwfJCFo7kklBXMl5WumLcQslrkxuQzPAputp3-6H73EBMat1thjC-VIwTwQmpKB_V9V7ZoYtxgFr1g2_1sFOUqO_hFFWH4UZ7s7fR-qST78IP3nbDL1S9q__Df8tf_8J6-g</recordid><startdate>20191014</startdate><enddate>20191014</enddate><creator>Miyashita, Naoya</creator><creator>He, Yilun</creator><creator>Ahsan, Nazmul</creator><creator>Okada, Yoshitaka</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-1311-1589</orcidid><orcidid>https://orcid.org/0000-0001-7086-9017</orcidid><orcidid>https://orcid.org/0000-0002-1547-5477</orcidid></search><sort><creationdate>20191014</creationdate><title>Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs</title><author>Miyashita, Naoya ; He, Yilun ; Ahsan, Nazmul ; Okada, Yoshitaka</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-b37f084e6852bad15c3dc4abd6f3b5624686d04801d72379a923ce73fb4be82b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Applied physics</topic><topic>Defect annealing</topic><topic>Dependence</topic><topic>Electrical impedance</topic><topic>Electroluminescence</topic><topic>Epitaxial growth</topic><topic>Heterostructures</topic><topic>Lattice matching</topic><topic>Molecular beam epitaxy</topic><topic>Photovoltaic cells</topic><topic>Quantum efficiency</topic><topic>Solar cells</topic><topic>Spectrum analysis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Miyashita, Naoya</creatorcontrib><creatorcontrib>He, Yilun</creatorcontrib><creatorcontrib>Ahsan, Nazmul</creatorcontrib><creatorcontrib>Okada, Yoshitaka</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Miyashita, Naoya</au><au>He, Yilun</au><au>Ahsan, Nazmul</au><au>Okada, Yoshitaka</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs</atitle><jtitle>Journal of applied physics</jtitle><date>2019-10-14</date><risdate>2019</risdate><volume>126</volume><issue>14</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>This study focuses on the relationship among defects, annealing temperatures, and solar cell properties in the molecular beam epitaxy-grown GaInNAsSb solar cells. Samples with an n-i-p double heterostructure were annealed at various temperatures from 650 to 850 °C, and the dynamics of deep-level defects were analyzed. A significant improvement was obtained between 750 and 800 °C due to suppression of both the traps and the nonradiative recombination centers. They were distinguished using the DC bias dependence of admittance spectra and were reconfirmed from the electroluminescence and quantum efficiency spectroscopy studies.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5111588</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0003-1311-1589</orcidid><orcidid>https://orcid.org/0000-0001-7086-9017</orcidid><orcidid>https://orcid.org/0000-0002-1547-5477</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2019-10, Vol.126 (14) |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_1_5111588 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Defect annealing Dependence Electrical impedance Electroluminescence Epitaxial growth Heterostructures Lattice matching Molecular beam epitaxy Photovoltaic cells Quantum efficiency Solar cells Spectrum analysis |
| title | Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T04%3A21%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Anneal%20mediated%20deep-level%20dynamics%20in%20GaInNAsSb%20dilute%20nitrides%20lattice-matched%20to%20GaAs&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Miyashita,%20Naoya&rft.date=2019-10-14&rft.volume=126&rft.issue=14&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.5111588&rft_dat=%3Cproquest_scita%3E2305300913%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2305300913&rft_id=info:pmid/&rfr_iscdi=true |